Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이 | Heisener Electronics
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Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

기록 313
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부품 번호
제조업체
설명
패키지
재고
수량
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SP8K2HZGTB
Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고7,170
-
30V
6A (Ta)
30mOhm @ 6A, 10V
2.5V @ 1mA
10.1nC @ 5V
520pF @ 10V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HP8MB5TB1
Rohm Semiconductor

40V 16.5A, DUAL NCH+PCH, HSOP8,

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
  • Power - Max: 3W (Ta), 20W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
패키지: -
재고7,500
-
40V
6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
2.5V @ 1mA
3.5nC @ 10V, 17.2nC @ 10V
150pF @ 20V, 920pF @ 20V
3W (Ta), 20W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
QH8JB5TCR
Rohm Semiconductor

MOSFET 2P-CH 40V 5A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 20V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
패키지: -
재고7,404
-
40V
5A (Ta)
41mOhm @ 5A, 10V
2.5V @ 1mA
17.2nC @ 10V
920pF @ 20V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
HS8K1TB
Rohm Semiconductor

MOSFET 2N-CH 30V 10A/11A HSML

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
  • Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: HSML3030L10
패키지: -
재고31,440
-
30V
10A (Ta), 11A (Ta)
14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
2.5V @ 1mA
6nC @ 10V, 7.4nC @ 10V
348pF @ 15V, 429pF @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
8-UDFN Exposed Pad
HSML3030L10
UT6MC5TCR
Rohm Semiconductor

MOSFET 60V 3.5A/2.5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
패키지: -
재고14,970
-
60V
3.5A (Ta), 2.5A (Ta)
95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V
2.5V @ 1mA
-
-
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
SP8M6HZGTB
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/3.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고7,458
-
30V
5A (Ta), 3.5A (Ta)
51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
2.5V @ 1mA
3.9nC @ 5V, 5.5nC @ 5V
230pF @ 10V, 490pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8K32FRATB
Rohm Semiconductor

MOSFET 2N-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
-
60V
4.5A (Ta)
65mOhm @ 4.5A, 10V
2.5V @ 1mA
10nC @ 5V
500pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8M6FRATB
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/3.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
-
30V
5A (Ta), 3.5A (Ta)
51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
2.5V @ 1mA
3.9nC @ 5V, 5.5nC @ 5V
230pF @ 10V, 490pF @ 10V
2W
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8M3HZGTB
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고6,975
-
30V
5A (Ta), 4.5A (Ta)
51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
2.5V @ 1mA
3.9nC @ 5V, 8.5nC @ 5V
230pF @ 10V, 850pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HP8KE6TB1
Rohm Semiconductor

MOSFET 2N-CH 100V 6A/17A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 17A (Tc)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
  • Power - Max: 3W (Ta), 21W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
패키지: -
재고7,374
-
100V
6A (Ta), 17A (Tc)
54mOhm @ 6A, 10V
2.5V @ 1mA
6.7nC @ 10V
305pF @ 50V
3W (Ta), 21W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
EM6J1T2CR
Rohm Semiconductor

MOSFET 2P-CH 20V EMT6

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
SP8K3TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
Logic Level Gate, 4V Drive
30V
7A (Ta)
24mOhm @ 7A, 10V
2.5V @ 1mA
11.8nC @ 5V
600pF @ 10V
2W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HP8KE7TB1
Rohm Semiconductor

MOSFET 2N-CH 100V 10A/24A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
  • Power - Max: 3W (Ta), 26W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
패키지: -
재고7,425
-
100V
10A (Ta), 24A (Tc)
19.6mOhm @ 10A, 10V
2.5V @ 1mA
19.8nC @ 10V
1100pF @ 50V
3W (Ta), 26W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
US6J12TCR
Rohm Semiconductor

MOSFET 2P-CH 12V 2A TUMT6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V
  • Power - Max: 910mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: TUMT6
패키지: -
재고8,700
-
12V
2A (Ta)
105mOhm @ 2A, 4.5V
1V @ 1mA
7.6nC @ 4.5V
850pF @ 6V
910mW (Ta)
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
TUMT6
UM6K31NFHATCN
Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A UMT6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: UMT6
패키지: -
재고7,290
-
60V
250mA (Ta)
2.4Ohm @ 250mA, 10V
2.3V @ 1mA
-
15pF @ 25V
150mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
UMT6
UT6JC5TCR
Rohm Semiconductor

MOSFET 2P-CH 60V 2.5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
패키지: -
재고7,023
-
60V
2.5A (Ta)
280mOhm @ 2.5A, 10V
2.5V @ 1mA
6.3nC @ 10V
265pF @ 30V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
UT6MA2TCR
Rohm Semiconductor

MOSFET N/P-CH 30V 4A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
패키지: -
재고98,130
-
30V
4A (Ta)
46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
2.5V @ 1mA
4.3nC @ 10V, 6.7nC @ 10V
180pF @ 15V, 305pF @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
UT6K3TCR1
Rohm Semiconductor

MOSFET 2N-CH 30V 5.5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: HUML2020L8
패키지: -
재고8,985
-
30V
5.5A (Ta)
42mOhm @ 5A, 4.5V
1.5V @ 1mA
4nC @ 4.5V
450pF @ 15V
2W (Ta)
150°C (TJ)
Surface Mount
8-PowerUDFN
HUML2020L8
QH8KC5TCR
Rohm Semiconductor

MOSFET 2N-CH 60V 3A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
패키지: -
재고3,471
-
60V
3A (Ta)
90mOhm @ 3A, 10V
2.5V @ 1mA
3.1nC @ 10V
135pF @ 30V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
SP8K24HZGTB
Rohm Semiconductor

MOSFET 2N-CH 45V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고7,167
-
45V
6A (Ta)
25mOhm @ 6A, 10V
2.5V @ 1mA
21.6nC @ 5V
1400pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
QS6K1FRATR
Rohm Semiconductor

MOSFET 2N-CH 30V 1A TSMT6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
  • Power - Max: 900mW (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
패키지: -
재고42,042
Logic Level Gate, 2.5V Drive
30V
1A (Ta)
238mOhm @ 1A, 4.5V
1.5V @ 1mA
2.4nC @ 4.5V
77pF @ 10V
900mW (Tc)
150°C
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
BSM300D12P3E005
Rohm Semiconductor

SIC 2N-CH 1200V 300A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 5.6V @ 91mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
  • Power - Max: 1260W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고18
-
1200V (1.2kV)
300A (Tc)
-
5.6V @ 91mA
-
14000pF @ 10V
1260W (Tc)
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
QH8KC6TCR
Rohm Semiconductor

MOSFET 2N-CH 60V 5.5A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
패키지: -
재고9,876
-
60V
5.5A (Ta)
30mOhm @ 5.5A, 10V
2.5V @ 1mA
7.6nC @ 10V
460pF @ 30V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
SP8K24FRATB
Rohm Semiconductor

MOSFET 2N-CH 45V 6A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고3
-
45V
6A (Ta)
25mOhm @ 6A, 10V
2.5V @ 1mA
21.6nC @ 5V
1400pF @ 10V
2W
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
LP8M3FP8TB1
Rohm Semiconductor

MOSFET N-CH SOP8G

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
HP8KC6TB1
Rohm Semiconductor

60V 23A, DUAL NCH+NCH, HSOP8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
  • Power - Max: 3W (Ta), 21W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
패키지: -
재고7,500
-
60V
8.5A (Ta), 23A (Tc)
27mOhm @ 8.5A, 10V
2.5V @ 1mA
7.6nC @ 10V
460pF @ 30V
3W (Ta), 21W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
UT6JA3TCR
Rohm Semiconductor

MOSFET 2P-CH 20V 5A HUML2020L8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerUDFN
  • Supplier Device Package: HUML2020L8
패키지: -
재고8,475
-
20V
5A (Ta)
59mOhm @ 5A, 4.5V
1.5V @ 1mA
6.5nC @ 4.5V
460pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
6-PowerUDFN
HUML2020L8
SP8J66FRATB
Rohm Semiconductor

MOSFET 2P-CH 9A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
-
-
9A (Ta)
18.5mOhm @ 9A, 10V
2.5V @ 1mA
-
-
-
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP