Rohm Semiconductor 제품

MCH032AN4R7CK

Rohm Semiconductor

CAP CER 4.7PF 25V C0G/NP0 0201

• Capacitance: 4.7pF
• Tolerance: ±0.25pF
• Voltage - Rated: 25V
• Temperature Coefficient: C0G, NP0
• Operating Temperature: -55°C ~ 125°C
• Features: -
• Ratings: -
• Applications: General Purpose
• Failure Rate: -
• Mounting Type: Surface Mount, MLCC
• Package / Case: 0201 (0603 Metric)
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): -
• Thickness (Max): 0.012" (0.30mm)
• Lead Spacing: -
• Lead Style: -

패키지: 0201 (0603 Metric)

MCH185CN472KK

Rohm Semiconductor

CAP CER 4700PF 50V X7R 0603

• Capacitance: 4700pF
• Tolerance: ±10%
• Voltage - Rated: 50V
• Temperature Coefficient: X7R
• Operating Temperature: -55°C ~ 125°C
• Features: -
• Ratings: -
• Applications: General Purpose
• Failure Rate: -
• Mounting Type: Surface Mount, MLCC
• Package / Case: 0603 (1608 Metric)
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.035" (0.90mm)
• Thickness (Max): -
• Lead Spacing: -
• Lead Style: -

패키지: 0603 (1608 Metric)

TT8J2TR

Rohm Semiconductor

MOSFET 2P-CH 30V 2.5A TSST8

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.5A
• Rds On (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
• Power - Max: 1.25W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: 8-TSST

패키지: 8-SMD, Flat Lead

BCX56-16T100

Rohm Semiconductor

TRANS NPN 80V 1A MPT3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: MPT3

패키지: TO-243AA

MMST5086T146

Rohm Semiconductor

TRANS PNP 50V 0.2A SC-59 SMT3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100µA, 5V
• Power - Max: 200mW
• Frequency - Transition: 40MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

BH18LB1WG-TR

Rohm Semiconductor

IC REG LINEAR 1.8V 150MA 5SSOP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 70µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

패키지: SC-74A, SOT-753

MSM5118165F-60J3-7

Rohm Semiconductor

IC DRAM 16MBIT 60NS 42SOJ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 30ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: 42-SOJ

패키지: -

RPI-125

Rohm Semiconductor

PHOTOINTERRUPTER ULTRAMIN HI RES

• Sensing Distance: 0.047" (1.2mm)
• Sensing Method: -
• Output Configuration: Phototransistor
• Current - DC Forward (If) (Max): 50mA
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Response Time: 10µs
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: Slotted Module

패키지: Slotted Module

MNR14ERAPJ3R3

Rohm Semiconductor

RES ARRAY 4 RES 3.3 OHM 1206

• Circuit Type: Isolated
• Resistance (Ohms): 3.3
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±500ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

패키지: 1206 (3216 Metric), Convex, Long Side Terminals

MNR14E0APJ132

Rohm Semiconductor

RES ARRAY 4 RES 1.3K OHM 1206

• Circuit Type: Isolated
• Resistance (Ohms): 1.3k
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

패키지: 1206 (3216 Metric), Convex, Long Side Terminals

MNR04M0APJ472

Rohm Semiconductor

RES ARRAY 4 RES 4.7K OHM 0804

• Circuit Type: Isolated
• Resistance (Ohms): 4.7k
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 0804, Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
• Height - Seated (Max): 0.018" (0.45mm)

패키지: 0804, Convex, Long Side Terminals

MNR35J5RJ182

Rohm Semiconductor

RES ARRAY 8 RES 1.8K OHM 2512

• Circuit Type: Bussed
• Resistance (Ohms): 1.8k
• Tolerance: ±5%
• Number of Resistors: 8
• Number of Pins: 10
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
• Height - Seated (Max): 0.026" (0.65mm)

패키지: 2512 (6432 Metric), Convex, Long Side Terminals

MNR18E0APJ331

Rohm Semiconductor

RES ARRAY 8 RES 330 OHM 1506

• Circuit Type: Isolated
• Resistance (Ohms): 330
• Tolerance: ±5%
• Number of Resistors: 8
• Number of Pins: 16
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 1506, Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.150" L x 0.063" W (3.80mm x 1.60mm)
• Height - Seated (Max): 0.022" (0.55mm)

패키지: 1506, Convex, Long Side Terminals

MCR100JZHJ6R8

Rohm Semiconductor

RES SMD 6.8 OHM 5% 1W 2512

• Resistance: 6.8 Ohms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±500ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 2512 (6432 Metric)

MCR100JZHFLR560

Rohm Semiconductor

RES SMD 0.56 OHM 1% 1W 2512

• Resistance: 560 mOhms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 2512 (6432 Metric)

MCR10EZPF16R0

Rohm Semiconductor

RES SMD 16 OHM 1% 1/8W 0805

• Resistance: 16 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

ESR10EZPF2612

Rohm Semiconductor

RES SMD 26.1K OHM 1% 0.4W 0805

• Resistance: 26.1 kOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

ESR10EZPF2202

Rohm Semiconductor

RES SMD 22K OHM 1% 0.4W 0805

• Resistance: 22 kOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

SFR01MZPJ472

Rohm Semiconductor

RES 4.7K OHM 5% 1/16W 0402

• Resistance: 4.7 kOhms
• Tolerance: ±5%
• Power (Watts): 0.63W, 5/8W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.022" W (1.00mm x 0.55mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0402 (1005 Metric)

MCR01MRTF2492

Rohm Semiconductor

RES SMD 24.9K OHM 1% 1/16W 0402

• Resistance: 24.9 kOhms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0402 (1005 Metric)

KTR10EZPF8871

Rohm Semiconductor

RES SMD 8.87K OHM 1% 1/8W 0805

• Resistance: 8.87 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

ESR18EZPJ155

Rohm Semiconductor

RES SMD 1.5M OHM 5% 1/3W 1206

• Resistance: 1.5 MOhms
• Tolerance: ±5%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR03ERTF4872

Rohm Semiconductor

RES SMD 48.7K OHM 1% 1/10W 0603

• Resistance: 48.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

PMR18EZPFU7L00

Rohm Semiconductor

RES SMD 0.007 OHM 1% 1W 1206

• Resistance: 7 mOhms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.017" (0.43mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

PDZVTR30A

Rohm Semiconductor

DIODE ZENER 30V 1W PMDTM

• Voltage - Zener (Nom) (Vz): 30 V
• Tolerance: ±6.67%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 18 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 23 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM

패키지: -

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BR25H256FJ-5ACE2

Rohm Semiconductor

IC EEPROM 256KBIT SPI 8SOPJ

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 256Kbit
• Memory Interface: SPI
• Clock Frequency: 20 MHz
• Write Cycle Time - Word, Page: 3.5ms
• Access Time: -
• Voltage - Supply: 1.7V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

패키지: -

RQ5E040TNTL

Rohm Semiconductor

MOSFET N-CH 30V 4A TSMT3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT3
• Package / Case: SC-96

패키지: -

RB088T150NZC9

Rohm Semiconductor

DIODE ARR SCHOT 150V 10A TO220FN

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15 µA @ 150 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FN

패키지: -