Rohm Semiconductor 제품

RT1A060APTR

Rohm Semiconductor

MOSFET P-CH 12V 6A TSST8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 6V
• Vgs (Max): -8V
• FET Feature: -
• Power Dissipation (Max): 600mW (Ta)
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 6A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSST
• Package / Case: 8-SMD, Flat Lead

패키지: 8-SMD, Flat Lead

DTC143TSATP

Rohm Semiconductor

TRANS PREBIAS NPN 300MW SPT

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Through Hole
• Package / Case: SC-72 Formed Leads
• Supplier Device Package: SPT

패키지: SC-72 Formed Leads

VT6X1T2R

Rohm Semiconductor

TRANS 2NPN 20V 0.2A 6VMT

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
• Power - Max: 150mW
• Frequency - Transition: 400MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD
• Supplier Device Package: VMT6

패키지: 6-SMD

1SR124-400AT-81

Rohm Semiconductor

DIODE GEN PURP 400V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: GSR
• Operating Temperature - Junction: -60°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

BD4275FPJ-CE2

Rohm Semiconductor

IC REG LINEAR 500MA TO252-J5F

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: TO252-J5F

패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD

BU1CUA3WNVX-TL

Rohm Semiconductor

IC REG LINEAR 1.25V 300MA 4SSON

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 90µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: SSON004X1010

패키지: 4-UDFN Exposed Pad

BR93G86F-3AGTE2

Rohm Semiconductor

IC EEPROM 16KBIT 3MHZ 8SOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (1K x 16)
• Memory Interface: SPI
• Clock Frequency: 3MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.173", 4.40mm Width)

BR24T64FV-WE2

Rohm Semiconductor

IC EEPROM 64KBIT 400KHZ 8SSOPB

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 64Kb (8K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-SSOPB

패키지: 8-LSSOP (0.173", 4.40mm Width)

SML-Z14Y4TT86

Rohm Semiconductor

LED YELLOW CLEAR 2PLCC SMD

• Color: Yellow
• Configuration: -
• Lens Color: Colorless
• Lens Transparency: Clear
• Millicandela Rating: 710mcd
• Lens Style/Size: Round with Flat Top, 2.40mm
• Voltage - Forward (Vf) (Typ): 2.1V
• Current - Test: 50mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 590nm
• Wavelength - Peak: -
• Features: -
• Package / Case: 2-PLCC
• Supplier Device Package: 2-PLCC
• Size / Dimension: 3.20mm L x 2.80mm W
• Height (Max): 2.05mm

패키지: 2-PLCC

MCR18ERTF91R0

Rohm Semiconductor

RES SMD 91 OHM 1% 1/4W 1206

• Resistance: 91 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR18EZHFLR470

Rohm Semiconductor

RES SMD 0.47 OHM 1% 1/4W 1206

• Resistance: 470 mOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR100JZHFL4R70

Rohm Semiconductor

RES SMD 4.7 OHM 1% 1W 2512

• Resistance: 4.7 Ohms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 2512 (6432 Metric)

MCR03EZPJ512

Rohm Semiconductor

RES SMD 5.1K OHM 5% 1/10W 0603

• Resistance: 5.1 kOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

MCR03EZPJ390

Rohm Semiconductor

RES SMD 39 OHM 5% 1/10W 0603

• Resistance: 39 Ohms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

MCR03EZPFX1603

Rohm Semiconductor

RES SMD 160K OHM 1% 1/10W 0603

• Resistance: 160 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

KTR25JZPJ1R1

Rohm Semiconductor

RES SMD 1.1 OHM 5% 1/3W 1210

• Resistance: 1.1 Ohms
• Tolerance: ±5%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

KTR18EZPF7321

Rohm Semiconductor

RES SMD 7.32K OHM 1% 1/4W 1206

• Resistance: 7.32 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

TRR03EZPF3601

Rohm Semiconductor

RES SMD 3.6K OHM 1% 1/10W 0603

• Resistance: 3.6 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

ESR03EZPF6803

Rohm Semiconductor

RES SMD 680K OHM 1% 1/4W 0603

• Resistance: 680 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

MCR18ERTF42R2

Rohm Semiconductor

RES SMD 42.2 OHM 1% 1/4W 1206

• Resistance: 42.2 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR03ERTF1653

Rohm Semiconductor

RES SMD 165K OHM 1% 1/10W 0603

• Resistance: 165 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

MCR03ERTF7871

Rohm Semiconductor

RES SMD 7.87K OHM 1% 1/10W 0603

• Resistance: 7.87 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

MCR10ERTF17R8

Rohm Semiconductor

RES SMD 17.8 OHM 1% 1/8W 0805

• Resistance: 17.8 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

ESR18EZPJ824

Rohm Semiconductor

RES SMD 820K OHM 5% 1/3W 1206

• Resistance: 820 kOhms
• Tolerance: ±5%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

RB751ZS-40T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 30MA GMD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 30mA
• Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 nA @ 30 V
• Capacitance @ Vr, F: 1.4pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: GMD2
• Operating Temperature - Junction: 125°C

패키지: -

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BD49E25G-MTR

Rohm Semiconductor

IC SUPERVISOR 1 CHANNEL 5SSOP

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 2.5V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

패키지: -

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EDZ9HUTE613-9B

Rohm Semiconductor

DIODE ZENER EMD2

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: 100 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: EMD2

패키지: -

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RD3L01BATTL1

Rohm Semiconductor

PCH -60V -10A POWER MOSFET - RD3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 26W (Ta)
• Rds On (Max) @ Id, Vgs: 84mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -