Rohm Semiconductor 제품

RTQ040P02TR

Rohm Semiconductor

MOSFET P-CH 20V 4A TSMT6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT6 (SC-95)
• Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: SOT-23-6 Thin, TSOT-23-6

QS6Z5TR

Rohm Semiconductor

TRANS NPN/PNP 50V 1A TSMT6

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA / 400mV @ 25mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
• Power - Max: 1.25W
• Frequency - Transition: 360MHz, 400MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSMT6 (SC-95)

패키지: SOT-23-6 Thin, TSOT-23-6

PTZTE2518B

Rohm Semiconductor

DIODE ZENER 19V 1W PMDS

• Voltage - Zener (Nom) (Vz): 19V
• Tolerance: ±6%
• Power - Max: 1W
• Impedance (Max) (Zzt): 12 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 13V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS

패키지: DO-214AC, SMA

UMZ5.1NT106

Rohm Semiconductor

DIODE ZENER ARRAY 5.1V UMD3

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: -
• Power - Max: 200mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 2µA @ 1.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMD3

패키지: SC-70, SOT-323

RB068L150TE25

Rohm Semiconductor

DIODE SCHOTTKY 150V 2A PMDS

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 810mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS
• Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AC, SMA

BD65B60GWL-E2

Rohm Semiconductor

IC WHITE LED DVR 28.5V 50UCSP

• Type: DC DC Regulator
• Topology: Step-Up (Boost)
• Internal Switch(s): Yes
• Number of Outputs: 2
• Voltage - Supply (Min): 2.7V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 28.5V
• Current - Output / Channel: 25mA
• Frequency: 600kHz ~ 1.1MHz
• Dimming: PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 12-UFBGA, CSPBGA
• Supplier Device Package: 12-UCSP50L1 (1.4x1.8)

패키지: 12-UFBGA, CSPBGA

BR24T64FVJ-WE2

Rohm Semiconductor

IC EEPROM 64KBIT 400KHZ 8TSSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 64Kb (8K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-TSSOP-BJ

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

ICP-S1.8TN

Rohm Semiconductor

FUSE BRD MNT 1.8A 50VAC/VDC 2SMD

• Fuse Type: Board Mount (Cartridge Style Excluded)
• Current Rating: 1.8A
• Voltage Rating - AC: 50V
• Voltage Rating - DC: 50V
• Response Time: Fast
• Package / Case: 2-SMD, J-Lead
• Mounting Type: Surface Mount
• Breaking Capacity @ Rated Voltage: -
• Melting I2t: -
• Approvals: -
• Operating Temperature: -55°C ~ 125°C
• Color: -
• Size / Dimension: 0.118" L x 0.098" W x 0.079" H (3.00mm x 2.50mm x 2.00mm)

패키지: 2-SMD, J-Lead

MCR004YZPF4701

Rohm Semiconductor

RES SMD 4.7K OHM 1% 1/32W 01005

• Resistance: 4.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.03W, 1/32W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 01005 (0402 Metric)
• Supplier Device Package: 01005
• Size / Dimension: 0.016" L x 0.008" W (0.40mm x 0.20mm)
• Height - Seated (Max): 0.006" (0.15mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 01005 (0402 Metric)

MCR100JZHF10R2

Rohm Semiconductor

RES SMD 10.2 OHM 1% 1W 2512

• Resistance: 10.2 Ohms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 2512 (6432 Metric)

MCR25JZHFL4R70

Rohm Semiconductor

RES SMD 4.7 OHM 1% 1/2W 1210

• Resistance: 4.7 Ohms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

MCR18EZHJ392

Rohm Semiconductor

RES SMD 3.9K OHM 5% 1/4W 1206

• Resistance: 3.9 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

ESR18EZPJ755

Rohm Semiconductor

RES SMD 7.5M OHM 5% 1/3W 1206

• Resistance: 7.5 MOhms
• Tolerance: ±5%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

LTR18EZPJ472

Rohm Semiconductor

RES SMD 4.7K OHM 3/4W 1206 WIDE

• Resistance: 4.7 kOhms
• Tolerance: ±5%
• Power (Watts): 0.75W, 3/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 1206 (3216 Metric), 0612
• Supplier Device Package: 0612 (1632 Metric)
• Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: Wide 1206 (3216 Metric), 0612

MCR10ERTF4750

Rohm Semiconductor

RES SMD 475 OHM 1% 1/8W 0805

• Resistance: 475 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

MCR03ERTF35R7

Rohm Semiconductor

RES SMD 35.7 OHM 1% 1/10W 0603

• Resistance: 35.7 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

ESR03EZPJ515

Rohm Semiconductor

RES SMD 5.1M OHM 5% 1/4W 0603

• Resistance: 5.1 MOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

ESR25JZPJ223

Rohm Semiconductor

RES SMD 22K OHM 5% 1/2W 1210

• Resistance: 22 kOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

MCR100JZHF4320

Rohm Semiconductor

RES SMD 432 OHM 1% 1W 2512

• Resistance: 432 Ohms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 2512 (6432 Metric)

MCR10ERTJ201

Rohm Semiconductor

RES SMD 200 OHM 5% 1/8W 0805

• Resistance: 200 Ohms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

MCR006YRTJ272

Rohm Semiconductor

RES SMD 2.7K OHM 5% 1/20W 0201

• Resistance: 2.7 kOhms
• Tolerance: ±5%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0201 (0603 Metric)

BA4560RFJ-GE2

Rohm Semiconductor

LOW NOISE DUAL SUPPLY VOLTAGE OP

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 4 V/µs
• Gain Bandwidth Product: 4MHz
• -3db Bandwidth: -
• Current - Input Bias: 50nA
• Voltage - Input Offset: 0.5mV
• Current - Supply: 3mA
• Current - Output / Channel: -
• Voltage - Supply, Single/Dual (±): 8 V ~ 30 V, ±4 V ~ 15 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

패키지: 8-SOIC (0.154", 3.90mm Width)

YFZVFHTR9-1B

Rohm Semiconductor

DIODE ZENER 8.79V 500MW TUMD2M

• Voltage - Zener (Nom) (Vz): 8.79 V
• Tolerance: ±2.5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 6 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: TUMD2M

패키지: -

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BZX84B30VLYT116

Rohm Semiconductor

250MW, 30V, SOT-23, ZENER DIODE

• Voltage - Zener (Nom) (Vz): 30 V
• Tolerance: ±2%
• Power - Max: 250 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 21 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: -

SCT3105KRC15

Rohm Semiconductor

1200V, 24A, 4-PIN THD, TRENCH-ST

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
• Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
• Vgs (Max): +22V, -4V
• FET Feature: -
• Power Dissipation (Max): 134W
• Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4L
• Package / Case: TO-247-4

패키지: -

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RB521S-30UNTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

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EDZUCTE615-6B

Rohm Semiconductor

DIODE ZENER SMD

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: 100 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: -

패키지: -

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RB088BM-30FHTL

Rohm Semiconductor

DIODE ARR SCHOTT 30V 10A TO252

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3 µA @ 30 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252

패키지: -