페이지 910 - Rohm Semiconductor 제품

부품 번호	제조업체	설명	패키지	재고
MCH155A040CK	Rohm Semiconductor	CAP CER 4PF 50V C0G/NP0 0402 Capacitance: 4pF Tolerance: ±0.25pF Voltage - Rated: 50V Temperature Coefficient: C0G, NP0 Operating Temperature: -55°C ~ 125°C Features: - Ratings: - Applications: General Purpose Failure Rate: - Mounting Type: Surface Mount, MLCC Package / Case: 0402 (1005 Metric) Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Height - Seated (Max): 0.022" (0.55mm) Thickness (Max): - Lead Spacing: - Lead Style: -	패키지: 0402 (1005 Metric)	재고8,604
R6030ENX	Rohm Semiconductor	MOSFET N-CH 600V 30A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	패키지: TO-220-2 Full Pack	재고9,156
RDX080N50FU6	Rohm Semiconductor	MOSFET N-CH 500V 8A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	패키지: TO-220-2 Full Pack	재고20,784
SST6839T116	Rohm Semiconductor	TRANS PNP 40V 0.2A SST3 Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Power - Max: 200mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: TO-236-3, SC-59, SOT-23-3	재고3,488
DTC144GUAT106	Rohm Semiconductor	TRANS PREBIAS NPN 200MW UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: SC-70, SOT-323	재고36,000
DTB123YUT106	Rohm Semiconductor	TRANS PREBIAS PNP 200MW UMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: SC-70, SOT-323	재고319,668
IMD14T108	Rohm Semiconductor	TRANS NPN/PNP PREBIAS 0.3W SMT6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 220 Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	패키지: SC-74, SOT-457	재고17,904
PTZTE256.2B	Rohm Semiconductor	DIODE ZENER 6.5V 1W PMDS Voltage - Zener (Nom) (Vz): 6.5V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 6 Ohms Current - Reverse Leakage @ Vr: 20µA @ 3V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS	패키지: DO-214AC, SMA	재고3,204,480
RFN2L6STE25	Rohm Semiconductor	DIODE GEN PURP 600V 1.5A PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	패키지: DO-214AC, SMA	재고29,328
SCS230KE2C	Rohm Semiconductor	DIODE ARRAY SCHOTTKY 1200V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 300µA @ 1200V Operating Temperature - Junction: 175°C (Max) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고18,240
MNR34J5ABJ300	Rohm Semiconductor	RES ARRAY 4 RES 30 OHM 2012 Circuit Type: Isolated Resistance (Ohms): 30 Tolerance: ±5% Number of Resistors: 4 Number of Pins: 8 Power Per Element: 125mW Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 125°C Applications: Automotive AEC-Q200 Mounting Type: Surface Mount Package / Case: 2012, Convex, Long Side Terminals Supplier Device Package: - Size / Dimension: 0.205" L x 0.122" W (5.20mm x 3.10mm) Height - Seated (Max): 0.026" (0.65mm)	패키지: 2012, Convex, Long Side Terminals	재고5,688
MNR15E0RPJ561	Rohm Semiconductor	RES ARRAY 8 RES 560 OHM 1206 Circuit Type: Bussed Resistance (Ohms): 560 Tolerance: ±5% Number of Resistors: 8 Number of Pins: 10 Power Per Element: 31mW Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 125°C Applications: Automotive AEC-Q200 Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals Supplier Device Package: - Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Height - Seated (Max): 0.024" (0.60mm)	패키지: 1206 (3216 Metric), Convex, Long Side Terminals	재고4,284
MCR10EZPF7681	Rohm Semiconductor	RES SMD 7.68K OHM 1% 1/8W 0805 Resistance: 7.68 kOhms Tolerance: ±1% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고8,532
MCR10EZPJ822	Rohm Semiconductor	RES SMD 8.2K OHM 5% 1/8W 0805 Resistance: 8.2 kOhms Tolerance: ±5% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고2,898
MCR10EZPF2153	Rohm Semiconductor	RES SMD 215K OHM 1% 1/8W 0805 Resistance: 215 kOhms Tolerance: ±1% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고5,634
MCR03EZPFX2941	Rohm Semiconductor	RES SMD 2.94K OHM 1% 1/10W 0603 Resistance: 2.94 kOhms Tolerance: ±1% Power (Watts): 0.1W, 1/10W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Height - Seated (Max): 0.022" (0.55mm) Number of Terminations: 2 Failure Rate: -	패키지: 0603 (1608 Metric)	재고3,348
LTR18EZPJ242	Rohm Semiconductor	RES SMD 2.4K OHM 3/4W 1206 WIDE Resistance: 2.4 kOhms Tolerance: ±5% Power (Watts): 0.75W, 3/4W Composition: Thick Film Features: Automotive AEC-Q200, Pulse Withstanding Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: Wide 1206 (3216 Metric), 0612 Supplier Device Package: 0612 (1632 Metric) Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: Wide 1206 (3216 Metric), 0612	재고4,338
TRR01MZPF2430	Rohm Semiconductor	RES SMD 243 OHM 1% 1/16W 0402 Resistance: 243 Ohms Tolerance: ±1% Power (Watts): 0.063W, 1/16W Composition: Thick Film Features: Anti-Sulfur Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Height - Seated (Max): 0.016" (0.40mm) Number of Terminations: 2 Failure Rate: -	패키지: 0402 (1005 Metric)	재고8,910
TRR01MZPJ562	Rohm Semiconductor	RES SMD 5.6K OHM 5% 1/16W 0402 Resistance: 5.6 kOhms Tolerance: ±5% Power (Watts): 0.063W, 1/16W Composition: Thick Film Features: Anti-Sulfur Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Height - Seated (Max): 0.016" (0.40mm) Number of Terminations: 2 Failure Rate: -	패키지: 0402 (1005 Metric)	재고6,408
TRR03EZPF7500	Rohm Semiconductor	RES SMD 750 OHM 1% 1/10W 0603 Resistance: 750 Ohms Tolerance: ±1% Power (Watts): 0.1W, 1/10W Composition: Thick Film Features: Anti-Sulfur Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Height - Seated (Max): 0.022" (0.55mm) Number of Terminations: 2 Failure Rate: -	패키지: 0603 (1608 Metric)	재고7,416
ESR10EZPJ181	Rohm Semiconductor	RES SMD 180 OHM 5% 0.4W 0805 Resistance: 180 Ohms Tolerance: ±5% Power (Watts): 0.4W Composition: Thick Film Features: Automotive AEC-Q200, Pulse Withstanding Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고4,842
MCR01MRTF2493	Rohm Semiconductor	RES SMD 249K OHM 1% 1/16W 0402 Resistance: 249 kOhms Tolerance: ±1% Power (Watts): 0.063W, 1/16W Composition: Thick Film Features: - Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Height - Seated (Max): 0.016" (0.40mm) Number of Terminations: 2 Failure Rate: -	패키지: 0402 (1005 Metric)	재고3,294
MCR006YRTF4991	Rohm Semiconductor	RES SMD 4.99K OHM 1% 1/20W 0201 Resistance: 4.99 kOhms Tolerance: ±1% Power (Watts): 0.05W, 1/20W Composition: Thick Film Features: - Temperature Coefficient: ±250ppm/°C Operating Temperature: -55°C ~ 125°C Package / Case: 0201 (0603 Metric) Supplier Device Package: 0201 Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm) Height - Seated (Max): 0.010" (0.26mm) Number of Terminations: 2 Failure Rate: -	패키지: 0201 (0603 Metric)	재고147,066
KTR18EZPF5103	Rohm Semiconductor	RES SMD 510K OHM 1% 1/4W 1206 Resistance: 510 kOhms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: Automotive AEC-Q200, High Voltage Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고151,266
BD50GA3WNUX-TR	Rohm Semiconductor	IC REG LIN 5V 300MA VSON008X2030 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 14V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.9V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 900µA PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature, Soft Start Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: VSON008X2030	패키지: 8-UFDFN Exposed Pad	재고2,032
DTA124EU3HZGT106	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A UMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: -	재고7,095
UDZVFHTE-1710B	Rohm Semiconductor	DIODE ZENER 10V 200MW UMD2 Voltage - Zener (Nom) (Vz): 10 V Tolerance: ±2.2% Power - Max: 200 mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 7 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2	패키지: -	재고15,000
RSQ020N03HZGTR	Rohm Semiconductor	MOSFET N-CH 30V 2A TSMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	패키지: -	재고3,690

MCH155A040CK

Rohm Semiconductor

CAP CER 4PF 50V C0G/NP0 0402

Capacitance: 4pF
Tolerance: ±0.25pF
Voltage - Rated: 50V
Temperature Coefficient: C0G, NP0
Operating Temperature: -55°C ~ 125°C
Features: -
Ratings: -
Applications: General Purpose
Failure Rate: -
Mounting Type: Surface Mount, MLCC
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Height - Seated (Max): 0.022" (0.55mm)
Thickness (Max): -
Lead Spacing: -
Lead Style: -

패키지: 0402 (1005 Metric)

재고8,604

R6030ENX

Rohm Semiconductor

MOSFET N-CH 600V 30A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-2 Full Pack

패키지: TO-220-2 Full Pack

재고9,156

RDX080N50FU6

Rohm Semiconductor

MOSFET N-CH 500V 8A TO-220FM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-2 Full Pack

패키지: TO-220-2 Full Pack

재고20,784

SST6839T116

Rohm Semiconductor

TRANS PNP 40V 0.2A SST3

Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Power - Max: 200mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: TO-236-3, SC-59, SOT-23-3

재고3,488

DTC144GUAT106

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: SC-70, SOT-323

재고36,000

DTB123YUT106

Rohm Semiconductor

TRANS PREBIAS PNP 200MW UMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: SC-70, SOT-323

재고319,668

IMD14T108

Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 220
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SMT6

패키지: SC-74, SOT-457

재고17,904

PTZTE256.2B

Rohm Semiconductor

DIODE ZENER 6.5V 1W PMDS

Voltage - Zener (Nom) (Vz): 6.5V
Tolerance: ±6%
Power - Max: 1W
Impedance (Max) (Zzt): 6 Ohms
Current - Reverse Leakage @ Vr: 20µA @ 3V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS

패키지: DO-214AC, SMA

재고3,204,480

RFN2L6STE25

Rohm Semiconductor

DIODE GEN PURP 600V 1.5A PMDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)

패키지: DO-214AC, SMA

재고29,328

SCS230KE2C

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 1200V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature - Junction: 175°C (Max)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고18,240

MNR34J5ABJ300

Rohm Semiconductor

RES ARRAY 4 RES 30 OHM 2012

Circuit Type: Isolated
Resistance (Ohms): 30
Tolerance: ±5%
Number of Resistors: 4
Number of Pins: 8
Power Per Element: 125mW
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 125°C
Applications: Automotive AEC-Q200
Mounting Type: Surface Mount
Package / Case: 2012, Convex, Long Side Terminals
Supplier Device Package: -
Size / Dimension: 0.205" L x 0.122" W (5.20mm x 3.10mm)
Height - Seated (Max): 0.026" (0.65mm)

패키지: 2012, Convex, Long Side Terminals

재고5,688

MNR15E0RPJ561

Rohm Semiconductor

RES ARRAY 8 RES 560 OHM 1206

Circuit Type: Bussed
Resistance (Ohms): 560
Tolerance: ±5%
Number of Resistors: 8
Number of Pins: 10
Power Per Element: 31mW
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 125°C
Applications: Automotive AEC-Q200
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
Supplier Device Package: -
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Height - Seated (Max): 0.024" (0.60mm)

패키지: 1206 (3216 Metric), Convex, Long Side Terminals

재고4,284

MCR10EZPF7681

Rohm Semiconductor

RES SMD 7.68K OHM 1% 1/8W 0805

Resistance: 7.68 kOhms
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고8,532

MCR10EZPJ822

Rohm Semiconductor

RES SMD 8.2K OHM 5% 1/8W 0805

Resistance: 8.2 kOhms
Tolerance: ±5%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고2,898

MCR10EZPF2153

Rohm Semiconductor

RES SMD 215K OHM 1% 1/8W 0805

Resistance: 215 kOhms
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고5,634

MCR03EZPFX2941

Rohm Semiconductor

RES SMD 2.94K OHM 1% 1/10W 0603

Resistance: 2.94 kOhms
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Height - Seated (Max): 0.022" (0.55mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0603 (1608 Metric)

재고3,348

LTR18EZPJ242

Rohm Semiconductor

RES SMD 2.4K OHM 3/4W 1206 WIDE

Resistance: 2.4 kOhms
Tolerance: ±5%
Power (Watts): 0.75W, 3/4W
Composition: Thick Film
Features: Automotive AEC-Q200, Pulse Withstanding
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: Wide 1206 (3216 Metric), 0612
Supplier Device Package: 0612 (1632 Metric)
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: Wide 1206 (3216 Metric), 0612

재고4,338

TRR01MZPF2430

Rohm Semiconductor

RES SMD 243 OHM 1% 1/16W 0402

Resistance: 243 Ohms
Tolerance: ±1%
Power (Watts): 0.063W, 1/16W
Composition: Thick Film
Features: Anti-Sulfur
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0402 (1005 Metric)
Supplier Device Package: 0402
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Height - Seated (Max): 0.016" (0.40mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0402 (1005 Metric)

재고8,910

TRR01MZPJ562

Rohm Semiconductor

RES SMD 5.6K OHM 5% 1/16W 0402

Resistance: 5.6 kOhms
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Composition: Thick Film
Features: Anti-Sulfur
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0402 (1005 Metric)
Supplier Device Package: 0402
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Height - Seated (Max): 0.016" (0.40mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0402 (1005 Metric)

재고6,408

TRR03EZPF7500

Rohm Semiconductor

RES SMD 750 OHM 1% 1/10W 0603

Resistance: 750 Ohms
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Composition: Thick Film
Features: Anti-Sulfur
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Height - Seated (Max): 0.022" (0.55mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0603 (1608 Metric)

재고7,416

ESR10EZPJ181

Rohm Semiconductor

RES SMD 180 OHM 5% 0.4W 0805

Resistance: 180 Ohms
Tolerance: ±5%
Power (Watts): 0.4W
Composition: Thick Film
Features: Automotive AEC-Q200, Pulse Withstanding
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고4,842

MCR01MRTF2493

Rohm Semiconductor

RES SMD 249K OHM 1% 1/16W 0402

Resistance: 249 kOhms
Tolerance: ±1%
Power (Watts): 0.063W, 1/16W
Composition: Thick Film
Features: -
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0402 (1005 Metric)
Supplier Device Package: 0402
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Height - Seated (Max): 0.016" (0.40mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0402 (1005 Metric)

재고3,294

MCR006YRTF4991

Rohm Semiconductor

RES SMD 4.99K OHM 1% 1/20W 0201

Resistance: 4.99 kOhms
Tolerance: ±1%
Power (Watts): 0.05W, 1/20W
Composition: Thick Film
Features: -
Temperature Coefficient: ±250ppm/°C
Operating Temperature: -55°C ~ 125°C
Package / Case: 0201 (0603 Metric)
Supplier Device Package: 0201
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Height - Seated (Max): 0.010" (0.26mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0201 (0603 Metric)

재고147,066

KTR18EZPF5103

Rohm Semiconductor

RES SMD 510K OHM 1% 1/4W 1206

Resistance: 510 kOhms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: Automotive AEC-Q200, High Voltage
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고151,266

BD50GA3WNUX-TR

Rohm Semiconductor

IC REG LIN 5V 300MA VSON008X2030

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 14V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.9V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 900µA
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature, Soft Start
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: VSON008X2030

패키지: 8-UFDFN Exposed Pad

재고2,032

DTA124EU3HZGT106

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A UMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: -

재고7,095

UDZVFHTE-1710B

Rohm Semiconductor

DIODE ZENER 10V 200MW UMD2

Voltage - Zener (Nom) (Vz): 10 V
Tolerance: ±2.2%
Power - Max: 200 mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2

패키지: -

재고15,000

RSQ020N03HZGTR

Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT6 (SC-95)
Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: -

재고3,690