STMicroelectronics 제품 - 트랜지스터 - 양극(BJT) - 어레이 | Heisener Electronics
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STMicroelectronics 제품 - 트랜지스터 - 양극(BJT) - 어레이

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이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot L603C
STMicroelectronics

TRANS 8NPN DARL 90V 0.4A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 400mA
  • Voltage - Collector Emitter Breakdown (Max): 90V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 500µA, 300mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1.8W
  • Frequency - Transition: -
  • Operating Temperature: -25°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 18-DIP
패키지: -
재고124,920
400mA
90V
2V @ 500µA, 300mA
-
-
1.8W
-
-25°C ~ 150°C (TJ)
Through Hole
-
18-DIP
ULQ2003D1
STMicroelectronics

TRANS 7NPN DARL 50V 0.5A 16SO

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SO
패키지: 16-SOIC (0.154", 3.90mm Width)
재고7,456
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SO
hot L6221AS
STMicroelectronics

TRANS 4NPN DARL 50V 1.8A 16DIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.8A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1.8A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 16-PowerDIP
패키지: -
재고60,480
1.8A
50V
1.6V @ 1.8A
-
-
1W
-
-40°C ~ 150°C (TJ)
Through Hole
-
16-PowerDIP
hot STD845DN40
STMicroelectronics

TRANS 2NPN 400V 4A 8DIP

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
  • Power - Max: 3W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고8,712
4A
400V
500mV @ 1A, 4A
250µA
12 @ 2A, 5V
3W
-
150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
E-ULQ2003A
STMicroelectronics

TRANS 7NPN DARL 50V 0.5A 16DIP

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,600
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
-
-
-
hot ULQ2802A
STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
패키지: 18-DIP (0.300", 7.62mm)
재고6,688
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
1W
-
-40°C ~ 85°C (TA)
Through Hole
18-DIP (0.300", 7.62mm)
18-DIP
ULQ2001A
STMicroelectronics

TRANS 7NPN DARL 50V 0.5A 16DIP

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
패키지: 16-DIP (0.300", 7.62mm)
재고6,352
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-DIP
hot ULQ2003A
STMicroelectronics

TRANS 7NPN DARL 50V 0.5A 16DIP

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
패키지: 16-DIP (0.300", 7.62mm)
재고34,872
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-DIP
hot STD815CP40
STMicroelectronics

TRANS NPN/PNP 400V 1.5A 8DIP

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 350mA
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
  • Power - Max: 2.6W
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고24,000
1.5A
400V
1V @ 50mA, 350mA
1mA
16 @ 350mA, 5V
2.6W
-
-
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
hot ULQ2003D1013TR
STMicroelectronics

TRANS 7NPN DARL 50V 0.5A 16SO

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SO
패키지: 16-SOIC (0.154", 3.90mm Width)
재고362,016
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SO
hot ULN2066B
STMicroelectronics

TRANS 4NPN DARL 50V 1.75A 16DIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
패키지: 16-PowerDIP (0.300", 7.62mm)
재고73,824
1.75A
50V
1.4V @ 2mA, 1.25A
-
-
1W
-
-20°C ~ 85°C (TA)
Through Hole
16-PowerDIP (0.300", 7.62mm)
16-PowerDIP (20x7.10)
ULQ2804A
STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
패키지: 18-DIP (0.300", 7.62mm)
재고18,612
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
1W
-
-40°C ~ 85°C (TA)
Through Hole
18-DIP (0.300", 7.62mm)
18-DIP
hot ULN2075B
STMicroelectronics

TRANS 4NPN DARL 80V 1.75A 16DIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
패키지: 16-PowerDIP (0.300", 7.62mm)
재고205,332
1.75A
80V
1.5V @ 2.25mA, 1.5A
-
-
1W
-
-20°C ~ 85°C (TA)
Through Hole
16-PowerDIP (0.300", 7.62mm)
16-PowerDIP (20x7.10)
hot ULN2067B
STMicroelectronics

TRANS 4NPN DARL 80V 1.75A 16DIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
패키지: 16-PowerDIP (0.300", 7.62mm)
재고47,784
1.75A
80V
1.5V @ 2.25mA, 1.5A
-
-
1W
-
-20°C ~ 85°C (TA)
Through Hole
16-PowerDIP (0.300", 7.62mm)
16-PowerDIP (20x7.10)
hot ULN2074B
STMicroelectronics

TRANS 4NPN DARL 50V 1.75A 16DIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
패키지: 16-PowerDIP (0.300", 7.62mm)
재고89,736
1.75A
50V
1.4V @ 2mA, 1.25A
-
-
1W
-
-20°C ~ 85°C (TA)
Through Hole
16-PowerDIP (0.300", 7.62mm)
16-PowerDIP (20x7.10)
hot ULN2065B
STMicroelectronics

TRANS 4NPN DARL 80V 1.75A 16DIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
패키지: 16-PowerDIP (0.300", 7.62mm)
재고16,320
1.75A
80V
1.5V @ 2.25mA, 1.5A
-
-
1W
-
-20°C ~ 85°C (TA)
Through Hole
16-PowerDIP (0.300", 7.62mm)
16-PowerDIP (20x7.10)
hot ULN2069B
STMicroelectronics

TRANS 4NPN DARL 80V 1.75A 16DIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.25mA, 1.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
패키지: 16-PowerDIP (0.300", 7.62mm)
재고12,360
1.75A
80V
1.5V @ 2.25mA, 1.5A
-
-
1W
-
-20°C ~ 85°C (TA)
Through Hole
16-PowerDIP (0.300", 7.62mm)
16-PowerDIP (20x7.10)
hot ULN2802A
STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 2.25W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
패키지: 18-DIP (0.300", 7.62mm)
재고215,388
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
2.25W
-
-20°C ~ 150°C (TJ)
Through Hole
18-DIP (0.300", 7.62mm)
18-DIP
hot ULN2064B
STMicroelectronics

TRANS 4NPN DARL 50V 1.75A 16DIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
패키지: 16-PowerDIP (0.300", 7.62mm)
재고233,412
1.75A
50V
1.4V @ 2mA, 1.25A
-
-
1W
-
-20°C ~ 85°C (TA)
Through Hole
16-PowerDIP (0.300", 7.62mm)
16-PowerDIP (20x7.10)
ULQ2004A
STMicroelectronics

TRANS 7NPN DARL 50V 0.5A 16DIP

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.7V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
패키지: 16-DIP (0.300", 7.62mm)
재고19,902
500mA
50V
1.7V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-DIP
hot ULQ2003D1013TRY
STMicroelectronics

TRANS 7NPN DARL 50V 0.5A 16SO

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SO
패키지: 16-SOIC (0.154", 3.90mm Width)
재고31,152
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SO
hot ULQ2004D1013TR
STMicroelectronics

TRANS 7NPN DARL 50V 0.5A 16SO

  • Transistor Type: 7 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SO
패키지: 16-SOIC (0.154", 3.90mm Width)
재고136,896
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
-
-
150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SO
hot STD830CP40
STMicroelectronics

TRANS NPN/PNP 400V 3A 8DIP

  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V
  • Power - Max: 3W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고179,640
3A
400V
500mV @ 200mA, 1A
100µA
18 @ 700mA, 5V
3W
-
150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
hot ULN2801A
STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 2.25W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
패키지: 18-DIP (0.300", 7.62mm)
재고172,692
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
2.25W
-
-20°C ~ 150°C (TJ)
Through Hole
18-DIP (0.300", 7.62mm)
18-DIP
hot ULN2068B
STMicroelectronics

TRANS 4NPN DARL 50V 1.75A 16DIP

  • Transistor Type: 4 NPN Darlington (Quad)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 2mA, 1.25A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 16-PowerDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PowerDIP (20x7.10)
패키지: 16-PowerDIP (0.300", 7.62mm)
재고223,836
1.75A
50V
1.4V @ 2mA, 1.25A
-
-
1W
-
-20°C ~ 85°C (TA)
Through Hole
16-PowerDIP (0.300", 7.62mm)
16-PowerDIP (20x7.10)
hot ULQ2803A
STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 2.25W
  • Frequency - Transition: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
패키지: 18-DIP (0.300", 7.62mm)
재고6,816
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
2.25W
-
-40°C ~ 85°C (TA)
Through Hole
18-DIP (0.300", 7.62mm)
18-DIP
hot ULN2803A
STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 2.25W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
패키지: 18-DIP (0.300", 7.62mm)
재고4,016
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
2.25W
-
-20°C ~ 150°C (TJ)
Through Hole
18-DIP (0.300", 7.62mm)
18-DIP
hot ULN2804A
STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

  • Transistor Type: 8 NPN Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
  • Power - Max: 2.25W
  • Frequency - Transition: -
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
패키지: 18-DIP (0.300", 7.62mm)
재고423,108
500mA
50V
1.6V @ 500µA, 350mA
-
1000 @ 350mA, 2V
2.25W
-
-20°C ~ 150°C (TJ)
Through Hole
18-DIP (0.300", 7.62mm)
18-DIP