STMicroelectronics 제품 - 트랜지스터 - 양극(BJT) - RF

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
START499D	STMicroelectronics	TRANS RF NPN 4.5V 1A SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 13dB ~ 14dB Power - Max: 1.7W DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 160mA, 3V Current - Collector (Ic) (Max): 1A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: TO-243AA	재고7,792	4.5V	-	-	13dB ~ 14dB	1.7W	150 @ 160mA, 3V	1A	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
START499ETR	STMicroelectronics	TRANS RF SILICON NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): 3.3dB @ 1.8GHz Gain: 15dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 160mA, 4V Current - Collector (Ic) (Max): 600mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	패키지: SC-82A, SOT-343	재고6,016	4.5V	1.9GHz	3.3dB @ 1.8GHz	15dB	600mW	160 @ 160mA, 4V	600mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
START405TR	STMicroelectronics	TRANS RF NPN SILICON SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 19dB Power - Max: 45mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 4V Current - Collector (Ic) (Max): 10mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: -	패키지: SC-82A, SOT-343	재고396,000	4.5V	-	1.1dB @ 1.8GHz	19dB	45mW	160 @ 5mA, 4V	10mA	-	Surface Mount	SC-82A, SOT-343	-
SD1731	STMicroelectronics	TRANSISTOR NPN RF HF SSB M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 233W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M174 Supplier Device Package: M174	패키지: M174	재고3,376	55V	-	-	13dB	233W	15 @ 10A, 6V	20A	200°C (TJ)	Surface Mount	M174	M174
SD1728	STMicroelectronics	TRANSISTOR NPN RF HF SSB M177 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 15dB ~ 17dB Power - Max: 330W DC Current Gain (hFE) (Min) @ Ic, Vce: 23 @ 10A, 6V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M177 Supplier Device Package: M177	패키지: M177	재고3,392	55V	-	-	15dB ~ 17dB	330W	23 @ 10A, 6V	40A	200°C (TJ)	Surface Mount	M177	M177
SD1727	STMicroelectronics	TRANSISTOR NPN RF HF SSB M164 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 233W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M164 Supplier Device Package: M164	패키지: M164	재고7,504	55V	-	-	14dB	233W	18 @ 1.4A, 6V	10A	200°C (TJ)	Chassis, Stud Mount	M164	M164
SD1726	STMicroelectronics	TRANSISTOR NPN RF HF SSB M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 318W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M174 Supplier Device Package: M174	패키지: M174	재고6,288	55V	-	-	14dB	318W	18 @ 1.4A, 6V	20A	200°C (TJ)	Surface Mount	M174	M174
SD1488	STMicroelectronics	TRANSISTOR NPN RF BIPO VHF 6LEAD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 5.8dB Power - Max: 117W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M111 Supplier Device Package: M111	패키지: M111	재고4,192	16V	-	-	5.8dB	117W	20 @ 1A, 5V	8A	200°C (TJ)	Surface Mount	M111	M111
SD1477	STMicroelectronics	TRANSISTOR NPN RF BIPO VHF 6LEAD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 6dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M111 Supplier Device Package: M111	패키지: M111	재고3,504	18V	-	-	6dB	270W	10 @ 5A, 5V	20A	200°C (TJ)	Surface Mount	M111	M111
SD1446	STMicroelectronics	TRANSISTOR NPN RF BIPO UHF M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 183W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M113 Supplier Device Package: M113	패키지: M113	재고5,728	18V	-	-	10dB	183W	10 @ 5A, 5V	12A	200°C (TJ)	Surface Mount	M113	M113
SD1433	STMicroelectronics	TRANSISTOR NPN RF UHF 4LEAD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 58W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M122 Supplier Device Package: M122	패키지: M122	재고4,496	16V	-	-	7dB	58W	10 @ 1A, 5V	2.5A	200°C (TJ)	Chassis, Stud Mount	M122	M122
SD1405	STMicroelectronics	TRANS NPN RF MCRWAVE HF SSB M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M174 Supplier Device Package: M174	패키지: M174	재고3,232	18V	-	-	13dB	270W	20 @ 5A, 5V	20A	200°C (TJ)	Surface Mount	M174	M174
SD1275-01	STMicroelectronics	TRANS NPN RF MICROWAVE VHF M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: - Mounting Type: Surface Mount Package / Case: M113 Supplier Device Package: M113	패키지: M113	재고6,704	16V	-	-	9dB	70W	20 @ 250mA, 5V	8A	-	Surface Mount	M113	M113
SD1275	STMicroelectronics	TRANS NPN RF MICROWAVE VHF M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M135 Supplier Device Package: M135	패키지: M135	재고6,264	16V	-	-	9dB	70W	20 @ 250mA, 5V	8A	200°C (TJ)	Chassis, Stud Mount	M135	M135
SD1274	STMicroelectronics	TRANS NPN RF MICROWAVE VHF M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M135 Supplier Device Package: M135	패키지: M135	재고4,576	16V	-	-	10dB	70W	20 @ 250mA, 5V	8A	200°C (TJ)	Surface Mount	M135	M135
SD1274-01	STMicroelectronics	TRANS NPN RF MICROWAVE VHF M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 70W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: - Mounting Type: Surface Mount Package / Case: M113 Supplier Device Package: M113	패키지: M113	재고6,704	16V	-	-	10dB	70W	20 @ 250mA, 5V	8A	-	Surface Mount	M113	M113