STMicroelectronics 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
STS5DNF60L	STMicroelectronics	MOSFET 2N-CH 60V 5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 45 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고38,472	Logic Level Gate	60V	5A	45 mOhm @ 2A, 10V	2.5V @ 250µA	15nC @ 4.5V	1030pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STL13DP10F6	STMicroelectronics	MOSFET 2P-CH 100V 13A PWRFLAT56 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 25V Power - Max: 62.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	패키지: 8-PowerVDFN	재고4,576	Logic Level Gate	100V	13A	180 mOhm @ 1.7A, 10V	4V @ 250µA	16.5nC @ 10V	864pF @ 25V	62.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
STL7DN6LF3	STMicroelectronics	MOSFET 2N-CH 60V 20A 5X6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V Power - Max: 52W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	패키지: 8-PowerVDFN	재고4,304	Logic Level Gate	60V	20A	43 mOhm @ 3A, 10V	3V @ 250µA	8.8nC @ 10V	432pF @ 25V	52W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
STS2DNF30L	STMicroelectronics	MOSFET 2N-CH 30V 3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 110 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고928,884	Logic Level Gate	30V	3A	110 mOhm @ 1A, 10V	2.5V @ 250µA	4.5nC @ 10V	121pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STS5DPF20L	STMicroelectronics	MOSFET 2P-CH 20V 5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 16V Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고21,804	Logic Level Gate	20V	5A	55 mOhm @ 2.5A, 10V	2.5V @ 250µA	16nC @ 5V	1350pF @ 16V	1.6W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STL8DN10LF3	STMicroelectronics	MOSFET 2N-CH 100V 20A 5X6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V Power - Max: 70W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	패키지: 8-PowerVDFN	재고2,880	Logic Level Gate	100V	20A	35 mOhm @ 4A, 10V	3V @ 250µA	20.5nC @ 10V	970pF @ 25V	70W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
STS1DNC45	STMicroelectronics	MOSFET 2N-CH 450V 0.4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Power - Max: 1.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고616,368	Standard	450V	400mA	4.5 Ohm @ 500mA, 10V	3.7V @ 250µA	10nC @ 10V	160pF @ 25V	1.6W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STS8DN3LLH5	STMicroelectronics	MOSFET 2N-CH 30V 10A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 19 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V Power - Max: 2.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고508,416	Logic Level Gate	30V	10A	19 mOhm @ 5A, 10V	1V @ 250µA	5.4nC @ 4.5V	724pF @ 25V	2.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STS9D8NH3LL	STMicroelectronics	MOSFET 2N-CH 30V 8A/9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 9A Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,096,416	Logic Level Gate	30V	8A, 9A	22 mOhm @ 4A, 10V	1V @ 250µA	10nC @ 4.5V	857pF @ 25V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STL40DN3LLH5	STMicroelectronics	MOSFET 2N-CH 30V 40A POWERFLAT56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Power - Max: 60W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	패키지: 8-PowerVDFN	재고6,848	Standard	30V	40A	18 mOhm @ 5.5A, 10V	1.5V @ 250µA	4.5nC @ 4.5V	475pF @ 25V	60W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
STL40C30H3LL	STMicroelectronics	MOSFET N/P-CH 30V POWERFLAT FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A, 30A Rds On (Max) @ Id, Vgs: 21 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 24V Power - Max: 60W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	패키지: 8-PowerVDFN	재고5,008	Logic Level Gate	30V	40A, 30A	21 mOhm @ 4A, 10V	1V @ 250µA (Min)	4.6nC @ 4.5V	475pF @ 24V	60W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
STS10DN3LH5	STMicroelectronics	MOSFET 2N-CH 30V 10A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 21 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고71,088	Logic Level Gate	30V	10A	21 mOhm @ 5A, 10V	1V @ 250µA	4.6nC @ 5V	475pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STS8DN6LF6AG	STMicroelectronics	AUTOMOTIVE-GRADE DUAL N-CHANNEL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V Power - Max: 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고23,898	Logic Level Gate	60V	8A (Ta)	24 mOhm @ 4A, 10V	2.5V @ 250µA	27nC @ 10V	1340pF @ 25V	3.2W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STS8C5H30L	STMicroelectronics	MOSFET N/P-CH 30V 8A/5.4A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고337,980	Logic Level Gate	30V	8A, 5.4A	22 mOhm @ 4A, 10V	1V @ 250µA	10nC @ 5V	857pF @ 25V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
STL15DN4F5	STMicroelectronics	MOSFET 2N-CH 40V 60A POWERFLAT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 9 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Power - Max: 60W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	패키지: 8-PowerVDFN	재고5,216	Logic Level Gate	40V	60A	9 mOhm @ 7.5A, 10V	4V @ 250µA	25nC @ 10V	1550pF @ 25V	60W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
STL65DN3LLH5	STMicroelectronics	MOSFET 2N-CH 30V 65A POWERFLAT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Power - Max: 60W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	패키지: 8-PowerVDFN	재고235,368	Logic Level Gate	30V	65A	6.5 mOhm @ 9.5A, 10V	1.5V @ 250µA	12nC @ 4.5V	1500pF @ 25V	60W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
STS4DNF60L	STMicroelectronics	MOSFET 2N-CH 60V 4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고411,108	Logic Level Gate	60V	4A	55 mOhm @ 2A, 10V	2.5V @ 250µA	15nC @ 4.5V	1030pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SH68N65DM6AG	STMicroelectronics	MOSFET 2N-CH 650V 64A 9ACEPACK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V Power - Max: 379W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-ACEPACK SMIT	패키지: -	Request a Quote	-	650V	64A (Tc)	41mOhm @ 23A, 10V	4.75V @ 250µA	116nC @ 10V	5900pF @ 100V	379W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	9-PowerSMD	9-ACEPACK SMIT
STL76DN4LF7AG	STMicroelectronics	MOSFET 2N-CH 40V 40A POWERFLAT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 956pF @ 25V Power - Max: 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat™ (5x6)	패키지: -	재고9,030	-	40V	40A (Tc)	6mOhm @ 10A, 10V	2.5V @ 250µA	17nC @ 10V	956pF @ 25V	71W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat™ (5x6)
SH32N65DM6AG	STMicroelectronics	MOSFET 2N-CH 650V 32A 9ACEPACK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 100V Power - Max: 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-ACEPACK SMIT	패키지: -	재고702	-	650V	32A (Tc)	97mOhm @ 23A, 10V	4.75V @ 250µA	47nC @ 10V	2211pF @ 100V	208W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	9-PowerSMD	9-ACEPACK SMIT
SH63N65DM6AG	STMicroelectronics	MOSFET 2N-CH 650V 53A 9ACEPACK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3344pF @ 100V Power - Max: 424W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-ACEPACK SMIT	패키지: -	재고138	-	650V	53A (Tc)	64mOhm @ 23A, 10V	4.75V @ 250µA	80nC @ 10V	3344pF @ 100V	424W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	9-PowerSMD	9-ACEPACK SMIT
A1F25M12W2-F1	STMicroelectronics	SIC 4N-CH 1200V 50A ACEPACK1 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 4.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 147nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 800V Power - Max: - Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: ACEPACK 1	패키지: -	Request a Quote	-	1200V (1.2kV)	50A	34mOhm @ 50A, 18V	4.9V @ 5mA	147nC @ 18V	3500pF @ 800V	-	175°C (TJ)	Chassis Mount	Module	ACEPACK 1
STL38DN6F7AG	STMicroelectronics	MOSFET 2N-CH 60V 10A POWERFLAT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 57.7W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat™ (5x6)	패키지: -	Request a Quote	-	60V	10A (Tc)	27mOhm @ 5A, 10V	4V @ 250µA	7.9nC @ 10V	380pF @ 25V	57.7W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat™ (5x6)
ADP360120W3	STMicroelectronics	SIC 6N-CH 1200V 379A ACEPACK FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 379A (Tj) Rds On (Max) @ Id, Vgs: 3.45mOhm @ 360A, 18V Vgs(th) (Max) @ Id: 4.4V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 944nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 28070pF @ 800V Power - Max: 704W (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: ACEPACK	패키지: -	Request a Quote	-	1200V (1.2kV)	379A (Tj)	3.45mOhm @ 360A, 18V	4.4V @ 40mA	944nC @ 18V	28070pF @ 800V	704W (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	ACEPACK
M1F45M12W2-1LA	STMicroelectronics	AUTOMOTIVE-GRADE ACEPACK DMT-32 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 32-PowerDIP Module (1.264", 32.10mm) Supplier Device Package: ACEPACK DMT-32	패키지: -	재고255	-	1200V (1.2kV)	30A (Tc)	64mOhm @ 20A, 18V	5V @ 1mA	100nC @ 18V	2086pF @ 800V	-	-40°C ~ 175°C (TJ)	Through Hole	32-PowerDIP Module (1.264", 32.10mm)	ACEPACK DMT-32
STL105DN4LF7AG	STMicroelectronics	MOSFET 2N-CH 40V 40A POWERFLAT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1594pF @ 25V Power - Max: 94W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat™ (5x6)	패키지: -	Request a Quote	-	40V	40A (Tc)	4.5mOhm @ 12A, 10V	2.5V @ 250µA	27.5nC @ 10V	1594pF @ 25V	94W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat™ (5x6)
STL64DN4F7AG	STMicroelectronics	MOSFET 2N-CH 40V 40A POWERFLAT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 25V Power - Max: 57W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat™ (5x6)	패키지: -	Request a Quote	-	40V	40A (Tc)	8.5mOhm @ 20A, 10V	4V @ 250µA	9.8nC @ 10V	637pF @ 25V	57W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat™ (5x6)
STL52DN4LF7AG	STMicroelectronics	MOSFET 2N-CH 40V 18A POWERFLAT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Power - Max: 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat™ (5x6)	패키지: -	Request a Quote	-	40V	18A (Tc)	16mOhm @ 6A, 10V	2.5V @ 250µA	9.4nC @ 10V	500pF @ 25V	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat™ (5x6)

STS5DNF60L

STMicroelectronics

MOSFET 2N-CH 60V 5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고38,472

Logic Level Gate

60V

5A

45 mOhm @ 2A, 10V

2.5V @ 250µA

15nC @ 4.5V

1030pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STL13DP10F6

STMicroelectronics

MOSFET 2P-CH 100V 13A PWRFLAT56

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 25V
Power - Max: 62.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

패키지: 8-PowerVDFN

재고4,576

Logic Level Gate

100V

13A

180 mOhm @ 1.7A, 10V

4V @ 250µA

16.5nC @ 10V

864pF @ 25V

62.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

STL7DN6LF3

STMicroelectronics

MOSFET 2N-CH 60V 20A 5X6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V
Power - Max: 52W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

패키지: 8-PowerVDFN

재고4,304

Logic Level Gate

60V

20A

43 mOhm @ 3A, 10V

3V @ 250µA

8.8nC @ 10V

432pF @ 25V

52W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

STS2DNF30L

STMicroelectronics

MOSFET 2N-CH 30V 3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고928,884

Logic Level Gate

30V

3A

110 mOhm @ 1A, 10V

2.5V @ 250µA

4.5nC @ 10V

121pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STS5DPF20L

STMicroelectronics

MOSFET 2P-CH 20V 5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 16V
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고21,804

Logic Level Gate

20V

5A

55 mOhm @ 2.5A, 10V

2.5V @ 250µA

16nC @ 5V

1350pF @ 16V

1.6W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STL8DN10LF3

STMicroelectronics

MOSFET 2N-CH 100V 20A 5X6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V
Power - Max: 70W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

패키지: 8-PowerVDFN

재고2,880

Logic Level Gate

100V

20A

35 mOhm @ 4A, 10V

3V @ 250µA

20.5nC @ 10V

970pF @ 25V

70W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

STS1DNC45

STMicroelectronics

MOSFET 2N-CH 450V 0.4A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 400mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고616,368

Standard

450V

400mA

4.5 Ohm @ 500mA, 10V

3.7V @ 250µA

10nC @ 10V

160pF @ 25V

1.6W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STS8DN3LLH5

STMicroelectronics

MOSFET 2N-CH 30V 10A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V
Power - Max: 2.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고508,416

Logic Level Gate

30V

10A

19 mOhm @ 5A, 10V

1V @ 250µA

5.4nC @ 4.5V

724pF @ 25V

2.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STS9D8NH3LL

STMicroelectronics

MOSFET 2N-CH 30V 8A/9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 9A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,096,416

Logic Level Gate

30V

8A, 9A

22 mOhm @ 4A, 10V

1V @ 250µA

10nC @ 4.5V

857pF @ 25V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STL40DN3LLH5

STMicroelectronics

MOSFET 2N-CH 30V 40A POWERFLAT56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Power - Max: 60W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

패키지: 8-PowerVDFN

재고6,848

Standard

30V

40A

18 mOhm @ 5.5A, 10V

1.5V @ 250µA

4.5nC @ 4.5V

475pF @ 25V

60W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

STL40C30H3LL

STMicroelectronics

MOSFET N/P-CH 30V POWERFLAT

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A, 30A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 24V
Power - Max: 60W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

패키지: 8-PowerVDFN

재고5,008

Logic Level Gate

30V

40A, 30A

21 mOhm @ 4A, 10V

1V @ 250µA (Min)

4.6nC @ 4.5V

475pF @ 24V

60W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

STS10DN3LH5

STMicroelectronics

MOSFET 2N-CH 30V 10A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고71,088

Logic Level Gate

30V

10A

21 mOhm @ 5A, 10V

1V @ 250µA

4.6nC @ 5V

475pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STS8DN6LF6AG

STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고23,898

Logic Level Gate

60V

8A (Ta)

24 mOhm @ 4A, 10V

2.5V @ 250µA

27nC @ 10V

1340pF @ 25V

3.2W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STS8C5H30L

STMicroelectronics

MOSFET N/P-CH 30V 8A/5.4A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고337,980

Logic Level Gate

30V

8A, 5.4A

22 mOhm @ 4A, 10V

1V @ 250µA

10nC @ 5V

857pF @ 25V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

STL15DN4F5

STMicroelectronics

MOSFET 2N-CH 40V 60A POWERFLAT

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 9 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
Power - Max: 60W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

패키지: 8-PowerVDFN

재고5,216

Logic Level Gate

40V

60A

9 mOhm @ 7.5A, 10V

4V @ 250µA

25nC @ 10V

1550pF @ 25V

60W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

STL65DN3LLH5

STMicroelectronics

MOSFET 2N-CH 30V 65A POWERFLAT

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 65A
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Power - Max: 60W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

패키지: 8-PowerVDFN

재고235,368

Logic Level Gate

30V

65A

6.5 mOhm @ 9.5A, 10V

1.5V @ 250µA

12nC @ 4.5V

1500pF @ 25V

60W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

STS4DNF60L

STMicroelectronics

MOSFET 2N-CH 60V 4A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고411,108

Logic Level Gate

60V

4A

55 mOhm @ 2A, 10V

2.5V @ 250µA

15nC @ 4.5V

1030pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SH68N65DM6AG

STMicroelectronics

MOSFET 2N-CH 650V 64A 9ACEPACK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V
Power - Max: 379W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-ACEPACK SMIT

패키지: -

Request a Quote

-

650V

64A (Tc)

41mOhm @ 23A, 10V

4.75V @ 250µA

116nC @ 10V

5900pF @ 100V

379W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

9-PowerSMD

9-ACEPACK SMIT

STL76DN4LF7AG

STMicroelectronics

MOSFET 2N-CH 40V 40A POWERFLAT

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 956pF @ 25V
Power - Max: 71W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)

패키지: -

재고9,030

-

40V

40A (Tc)

6mOhm @ 10A, 10V

2.5V @ 250µA

17nC @ 10V

956pF @ 25V

71W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat™ (5x6)

SH32N65DM6AG

STMicroelectronics

MOSFET 2N-CH 650V 32A 9ACEPACK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 100V
Power - Max: 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-ACEPACK SMIT

패키지: -

재고702

-

650V

32A (Tc)

97mOhm @ 23A, 10V

4.75V @ 250µA

47nC @ 10V

2211pF @ 100V

208W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

9-PowerSMD

9-ACEPACK SMIT

SH63N65DM6AG

STMicroelectronics

MOSFET 2N-CH 650V 53A 9ACEPACK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3344pF @ 100V
Power - Max: 424W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-ACEPACK SMIT

패키지: -

재고138

-

650V

53A (Tc)

64mOhm @ 23A, 10V

4.75V @ 250µA

80nC @ 10V

3344pF @ 100V

424W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

9-PowerSMD

9-ACEPACK SMIT

A1F25M12W2-F1

STMicroelectronics

SIC 4N-CH 1200V 50A ACEPACK1

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 4.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 147nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 800V
Power - Max: -
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: ACEPACK 1

패키지: -

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-

1200V (1.2kV)

50A

34mOhm @ 50A, 18V

4.9V @ 5mA

147nC @ 18V

3500pF @ 800V

-

175°C (TJ)

Chassis Mount

Module

ACEPACK 1

STL38DN6F7AG

STMicroelectronics

MOSFET 2N-CH 60V 10A POWERFLAT

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Power - Max: 57.7W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)

패키지: -

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-

60V

10A (Tc)

27mOhm @ 5A, 10V

4V @ 250µA

7.9nC @ 10V

380pF @ 25V

57.7W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat™ (5x6)

ADP360120W3

STMicroelectronics

SIC 6N-CH 1200V 379A ACEPACK

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 379A (Tj)
Rds On (Max) @ Id, Vgs: 3.45mOhm @ 360A, 18V
Vgs(th) (Max) @ Id: 4.4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 944nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 28070pF @ 800V
Power - Max: 704W (Tj)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: ACEPACK

패키지: -

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-

1200V (1.2kV)

379A (Tj)

3.45mOhm @ 360A, 18V

4.4V @ 40mA

944nC @ 18V

28070pF @ 800V

704W (Tj)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

ACEPACK

M1F45M12W2-1LA

STMicroelectronics

AUTOMOTIVE-GRADE ACEPACK DMT-32

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 2086pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Supplier Device Package: ACEPACK DMT-32

패키지: -

재고255

-

1200V (1.2kV)

30A (Tc)

64mOhm @ 20A, 18V

5V @ 1mA

100nC @ 18V

2086pF @ 800V

-

-40°C ~ 175°C (TJ)

Through Hole

32-PowerDIP Module (1.264", 32.10mm)

ACEPACK DMT-32

STL105DN4LF7AG

STMicroelectronics

MOSFET 2N-CH 40V 40A POWERFLAT

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1594pF @ 25V
Power - Max: 94W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)

패키지: -

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-

40V

40A (Tc)

4.5mOhm @ 12A, 10V

2.5V @ 250µA

27.5nC @ 10V

1594pF @ 25V

94W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat™ (5x6)

STL64DN4F7AG

STMicroelectronics

MOSFET 2N-CH 40V 40A POWERFLAT

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 25V
Power - Max: 57W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)

패키지: -

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-

40V

40A (Tc)

8.5mOhm @ 20A, 10V

4V @ 250µA

9.8nC @ 10V

637pF @ 25V

57W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat™ (5x6)

STL52DN4LF7AG

STMicroelectronics

MOSFET 2N-CH 40V 18A POWERFLAT

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Power - Max: 65W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)

패키지: -

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-

40V

18A (Tc)

16mOhm @ 6A, 10V

2.5V @ 250µA

9.4nC @ 10V

500pF @ 25V

65W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat™ (5x6)