페이지 10 - STMicroelectronics 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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STMicroelectronics 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 2,492
페이지  10/89
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설명
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재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STWA48N60M6
STMicroelectronics

MOSFET N-CH 600V 39A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
39A (Tc)
10V
4.75V @ 250µA
57 nC @ 10 V
2578 pF @ 100 V
±25V
-
250W (Tc)
69mOhm @ 19.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STN1NK60ZL
STMicroelectronics

MOSFET N-CH 600V 300MA SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: -
재고13,215
MOSFET (Metal Oxide)
600 V
300mA (Tc)
10V
4.5V @ 50µA
6.9 nC @ 10 V
94 pF @ 25 V
±30V
-
3.3W (Tc)
15Ohm @ 400mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
STL26N60DM6
STMicroelectronics

MOSFET N-CH 600V 15A PWRFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 215mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
패키지: -
재고5,997
MOSFET (Metal Oxide)
600 V
15A (Tc)
10V
4.75V @ 250µA
24 nC @ 10 V
940 pF @ 100 V
±25V
-
110W (Tc)
215mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
STI28N60M2
STMicroelectronics

MOSFET N-CH 600V 22A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262 (I2PAK)
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
패키지: -
재고18,000
MOSFET (Metal Oxide)
600 V
22A (Tc)
10V
4V @ 250µA
36 nC @ 10 V
1440 pF @ 100 V
±25V
-
170W (Tc)
150mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262 (I2PAK)
TO-262-3 Long Leads, I2PAK, TO-262AA
STL12N60M6
STMicroelectronics

MOSFET N-CH 600V 6.4A PWRFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 490mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6) HV
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
6.4A (Tc)
10V
4.75V @ 250µA
12.3 nC @ 10 V
452 pF @ 100 V
±25V
-
48W (Tc)
490mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (5x6) HV
8-PowerVDFN
STL36N60M6
STMicroelectronics

MOSFET N-CH 600V 25A PWRFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
패키지: -
재고330
MOSFET (Metal Oxide)
600 V
25A (Tc)
10V
4.75V @ 250µA
44.3 nC @ 10 V
1960 pF @ 100 V
±25V
-
160W (Tc)
110mOhm @ 12.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
STP16NF96L
STMicroelectronics

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STP33N60DM6
STMicroelectronics

MOSFET N-CH 600V 25A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: -
재고3,000
MOSFET (Metal Oxide)
600 V
25A (Tc)
10V
4.75V @ 250µA
35 nC @ 10 V
1500 pF @ 100 V
±25V
-
190W (Tc)
128mOhm @ 12.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
STO68N65DM6
STMicroelectronics

N-CHANNEL 650 V, 53 MOHM TYP., 5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3528 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 27.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL (HV)
  • Package / Case: 8-PowerSFN
패키지: -
재고711
MOSFET (Metal Oxide)
650 V
55A (Tc)
10V
4.75V @ 250µA
80 nC @ 10 V
3528 pF @ 100 V
±25V
-
240W (Tc)
65mOhm @ 27.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TOLL (HV)
8-PowerSFN
STD7N95K5AG
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
950 V
9A (Tc)
10V
5V @ 100µA
9.6 nC @ 10 V
430 pF @ 100 V
±30V
-
110W (Tc)
1.25Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
STL210N4LF7AG
STMicroelectronics

MOSFET N-CH 40V 120A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4210 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6)
  • Package / Case: 8-PowerVDFN
패키지: -
재고8,802
MOSFET (Metal Oxide)
40 V
120A (Tc)
4.5V, 10V
2.5V @ 250µA
56 nC @ 10 V
4210 pF @ 25 V
±20V
-
150W (Tc)
1.6mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
STF7N65M6
STMicroelectronics

MOSFET N-CH 650V 5A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
패키지: -
Request a Quote
MOSFET (Metal Oxide)
650 V
5A (Tc)
10V
3.75V @ 250µA
6.9 nC @ 10 V
220 pF @ 100 V
±25V
-
20W (Tc)
990mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STL33N60M6
STMicroelectronics

MOSFET 600V 21A POWERFLAT HV

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 137mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
4.75V @ 250µA
33.4 nC @ 10 V
1515 pF @ 100 V
±25V
-
150W (Tc)
137mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
SCT027W65G3-4AG
STMicroelectronics

TO247-4

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 400 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 313W (Tc)
  • Rds On (Max) @ Id, Vgs: 39.3mOhm @ 30A, 18V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
패키지: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
650 V
60A (Tc)
15V, 18V
4.2V @ 5mA
51 nC @ 18 V
1229 pF @ 400 V
+22V, -10V
-
313W (Tc)
39.3mOhm @ 30A, 18V
-55°C ~ 200°C (TJ)
Through Hole
TO-247-4
TO-247-4
STD13N50DM2AG
STMicroelectronics

POWER TRANSISTORS

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
-
-
11A (Tc)
-
-
-
-
±25V
-
-
-
-
-
-
-
STL36N60DM6
STMicroelectronics

MOSFET N-CH 600V 15A PWRFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 215mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
15A (Tc)
10V
4.75V @ 250µA
24 nC @ 10 V
940 pF @ 100 V
±25V
-
110W (Tc)
215mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
STL110N4F7AG
STMicroelectronics

MOSFET N-CH 40V 108A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 54A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6)
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
108A (Tc)
10V
4V @ 250µA
15 nC @ 10 V
1150 pF @ 25 V
±20V
-
94W (Tc)
4mOhm @ 54A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
SCT040W120G3-4AG
STMicroelectronics

TO247-4

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 312W (Tc)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 16A, 18V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
패키지: -
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SiC (Silicon Carbide Junction Transistor)
1200 V
40A (Tc)
15V, 18V
4.2V @ 5mA
56 nC @ 18 V
1329 pF @ 800 V
+22V, -10V
-
312W (Tc)
54mOhm @ 16A, 18V
-55°C ~ 200°C (TJ)
Through Hole
TO-247-4
TO-247-4
STL180N6F7
STMicroelectronics

MOSFET N-CH 60V 32A/120A PWRFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4825 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6)
  • Package / Case: 8-PowerVDFN
패키지: -
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MOSFET (Metal Oxide)
60 V
32A (Ta), 120A (Tc)
10V
4V @ 250µA
79.5 nC @ 10 V
4825 pF @ 25 V
±20V
-
4.8W (Ta), 166W (Tc)
2.4mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
STD12N60DM6
STMicroelectronics

MOSFET N-CH 600V 10A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고7,497
MOSFET (Metal Oxide)
600 V
10A (Tc)
-
4.75V @ 250µA
17 nC @ 10 V
508 pF @ 100 V
±25V
-
90W (Tc)
390mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
STL26N65DM2
STMicroelectronics

MOSFET N-CH 650V 20A PWRFLAT HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 206mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
패키지: -
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MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
5V @ 250µA
35.5 nC @ 10 V
1480 pF @ 100 V
±25V
-
140W (Tc)
206mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
STB33N60DM6
STMicroelectronics

MOSFET N-CH 600V 25A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고792
MOSFET (Metal Oxide)
600 V
25A (Tc)
10V
4.75V @ 250µA
35 nC @ 10 V
1500 pF @ 100 V
±25V
-
190W (Tc)
128mOhm @ 12.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCT012H90G3AG
STMicroelectronics

H2PAK-7

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3880 pF @ 600 V
  • Vgs (Max): +18V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.8mOhm @ 60A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
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SiC (Silicon Carbide Junction Transistor)
900 V
110A (Tc)
15V, 18V
4.2V @ 10mA
138 nC @ 18 V
3880 pF @ 600 V
+18V, -5V
-
625W (Tc)
15.8mOhm @ 60A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
STB30N65M2AG
STMicroelectronics

MOSFET N-CH 650V 20A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고747
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
4V @ 250µA
30.8 nC @ 10 V
1440 pF @ 100 V
±25V
-
190W (Tc)
180mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCTH60N120G2-7
STMicroelectronics

SICFET N-CH 1200V 60A H2PAK-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
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SiCFET (Silicon Carbide)
1200 V
60A (Tc)
18V
5V @ 1mA
94 nC @ 18 V
1969 pF @ 800 V
+22V, -10V
-
390W (Tc)
52mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
STP18N60M6
STMicroelectronics

MOSFET N-CH 600V 13A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
패키지: -
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MOSFET (Metal Oxide)
600 V
13A (Tc)
10V
4.75V @ 250µA
16.8 nC @ 10 V
650 pF @ 100 V
±25V
-
110W (Tc)
280mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
STF35N65DM2
STMicroelectronics

MOSFET N-CH 650V 32A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
패키지: -
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MOSFET (Metal Oxide)
650 V
32A (Tc)
10V
5V @ 250µA
56.3 nC @ 10 V
2540 pF @ 100 V
±25V
-
40W (Tc)
110mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STD11N60M6
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 387 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
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MOSFET (Metal Oxide)
600 V
8A (Tc)
10V
4.75V @ 250µA
10.3 nC @ 10 V
387 pF @ 100 V
±25V
-
90W (Tc)
520mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63