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제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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STMicroelectronics |
DISCRETE
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MOSFET (Metal Oxide) | 30 V | 10A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 3.7 nC @ 4.5 V | 321 pF @ 25 V | ±20V | - | 50W (Tc) | 33mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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STMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 40 V
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패키지: - |
재고17,961 |
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MOSFET (Metal Oxide) | 40 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PowerFlat™ (5x6) | 8-PowerDFN |
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STMicroelectronics |
MOSFET N-CH 650V 5A TO220FP
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패키지: - |
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MOSFET (Metal Oxide) | 650 V | 5A (Tc) | 10V | 4V @ 250µA | 10 nC @ 10 V | 315 pF @ 100 V | ±25V | - | 20W (Tc) | 900mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
N-CHANNEL 650 V, 128 MOHM TYP.,
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패키지: - |
재고1,377 |
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MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 4.2V @ 250µA | 32 nC @ 10 V | 1239 pF @ 400 V | ±30V | - | 140W (Tc) | 150mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
DISCRETE
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MOSFET (Metal Oxide) | 950 V | 18A (Tc) | 10V | 5V @ 100µA | 50.7 nC @ 10 V | 1600 pF @ 100 V | ±30V | - | 28W (Tc) | 330mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 63A TO247
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패키지: - |
재고9 |
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MOSFET (Metal Oxide) | 600 V | 63A (Tc) | 10V | 4.75V @ 250µA | 106 nC @ 10 V | 4360 pF @ 100 V | ±25V | - | 390W (Tc) | 41mOhm @ 31.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
DISCRETE
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MOSFET (Metal Oxide) | 40 V | 31A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 48 nC @ 4.5 V | 2540 pF @ 25 V | ±18V | - | 50W (Tc) | 26mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 600V 30A TO247
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패키지: - |
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MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 4.75V @ 250µA | 44 nC @ 10 V | 1920 pF @ 100 V | ±25V | - | 210W (Tc) | 99mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 30V 55A D2PAK
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MOSFET (Metal Oxide) | 30 V | 55A (Tc) | 4.5V, 10V | 1V @ 250µA | 27 nC @ 4.5 V | 1265 pF @ 25 V | ±16V | - | 80W (Tc) | 13mOhm @ 27.5A, 10V | 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 15A TO220FP
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MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 4.75V @ 250µA | 20 nC @ 10 V | 800 pF @ 100 V | ±25V | - | 30W (Tc) | 230mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V I2PAK
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패키지: - |
재고270 |
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MOSFET (Metal Oxide) | 600 V | 17A (Tj) | 10V | 4.75V @ 250µA | 23 nC @ 10 V | 960 pF @ 100 V | ±25V | - | 130W (Tc) | 190mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2PAK, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 650V 4A IPAK
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MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 4V @ 250µA | 9.8 nC @ 10 V | 226 pF @ 100 V | ±25V | - | 60W (Tc) | 1.35Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
SILICON CARBIDE POWER MOSFET 120
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SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 4.9V @ 1mA | 61 nC @ 18 V | 1233 pF @ 800 V | +22V, -10V | - | 238W (Tc) | 100mOhm @ 20A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-7 | - |
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STMicroelectronics |
MOSFET N-CH 600V 62A TO247-4
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패키지: - |
재고450 |
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MOSFET (Metal Oxide) | 600 V | 62A (Tc) | 10V | 4.75V @ 250µA | 99 nC @ 10 V | 4360 pF @ 100 V | ±25V | - | 390W (Tc) | 42mOhm @ 31A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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STMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 600 V
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패키지: - |
재고3,027 |
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MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 4.75V @ 250µA | 55 nC @ 10 V | 2350 pF @ 100 V | ±25V | - | 250W (Tc) | 80mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 650 V, 19.9 MOHM TYP.,
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패키지: - |
재고192 |
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MOSFET (Metal Oxide) | 650 V | 95A (Tc) | 10V | 4.2V @ 250µA | 230 nC @ 10 V | 8844 pF @ 400 V | ±30V | - | 463W (Tc) | 23mOhm @ 48A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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STMicroelectronics |
MOSFET N-CH 60V 40A DPAK
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MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 10V | 4V @ 250µA | 25 nC @ 10 V | 1600 pF @ 30 V | ±20V | - | 100W (Tc) | 8mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 6.4A DPAK
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MOSFET (Metal Oxide) | 600 V | 6.4A (Tc) | 10V | 4.75V @ 250µA | 8.8 nC @ 10 V | 338 pF @ 100 V | ±25V | - | 60W (Tc) | 600mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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STMicroelectronics |
DISCRETE
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MOSFET (Metal Oxide) | 600 V | 56A (Tc) | 10V | 4.75V @ 250µA | 98 nC @ 10 V | 4444 pF @ 100 V | ±25V | - | 390W (Tc) | 42mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 66A TO247
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MOSFET (Metal Oxide) | 600 V | 66A (Tc) | 10V | 5V @ 250µA | 121 nC @ 10 V | 5508 pF @ 100 V | ±25V | - | 446W (Tc) | 42mOhm @ 33A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 650 V
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패키지: - |
재고705 |
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MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 4.75V @ 250µA | 46 nC @ 10 V | 2000 pF @ 100 V | ±25V | - | 223W (Tc) | 115mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | H2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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STMicroelectronics |
MOSFET N-CH 600V 30A TO220
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패키지: - |
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MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 4.75V @ 250µA | 44 nC @ 10 V | 1920 pF @ 100 V | ±25V | - | 210W (Tc) | 99mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
DISCRETE
|
패키지: - |
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MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 4.75V @ 250µA | 46 nC @ 10 V | 2000 pF @ 100 V | ±25V | - | 223W (Tc) | 115mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
POWER TRANSISTORS
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패키지: - |
재고90 |
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MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 4.75V @ 250µA | 55 nC @ 10 V | 2350 pF @ 100 V | ±25V | - | 250W (Tc) | 80mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 (I2PAK) | TO-262-3 Long Leads, I2PAK, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 30V 80A DPAK
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패키지: - |
재고31,371 |
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MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 18 nC @ 4.5 V | 1640 pF @ 25 V | ±20V | - | 75W (Tc) | 5.2mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 100V 80A I2PAK
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MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 4.5V @ 250µA | 61 nC @ 10 V | - | ±20V | - | 150W (Tc) | 8mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 (I2PAK) | TO-262-3 Long Leads, I2PAK, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 600V TO247
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MOSFET (Metal Oxide) | 600 V | 26A (Tc) | - | - | - | - | - | - | - | - | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
SILICON CARBIDE POWER MOSFET 120
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패키지: - |
Request a Quote |
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SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 4.9V @ 1mA | 61 nC @ 18 V | 1233 pF @ 800 V | +22V, -10V | - | 278W (Tc) | 100mOhm @ 20A, 18V | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |