STMicroelectronics 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559-827
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

STMicroelectronics 제품 - 트랜지스터 - IGBT - 단일

기록 427
페이지  1/16
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
STGF30H65DFB2
STMicroelectronics

DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 50 W
  • Switching Energy: 270µJ (on), 310µJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 18.4ns/71ns
  • Test Condition: 400V, 30A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): 115 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
패키지: -
Request a Quote
650 V
50 A
90 A
2.1V @ 15V, 30A
50 W
270µJ (on), 310µJ (off)
Standard
90 nC
18.4ns/71ns
400V, 30A, 6.8Ohm, 15V
115 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
STGSB200M65DF2AG
STMicroelectronics

DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 216 A
  • Current - Collector Pulsed (Icm): 700 A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A
  • Power - Max: 714 W
  • Switching Energy: 3.82mJ (on), 6.97mJ (off)
  • Input Type: Standard
  • Gate Charge: 554 nC
  • Td (on/off) @ 25°C: 122ns/250ns
  • Test Condition: 400V, 200A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 174.5 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-ACEPACK SMIT
패키지: -
재고450
650 V
216 A
700 A
2.05V @ 15V, 200A
714 W
3.82mJ (on), 6.97mJ (off)
Standard
554 nC
122ns/250ns
400V, 200A, 4.7Ohm, 15V
174.5 ns
-55°C ~ 175°C (TJ)
Surface Mount
9-PowerSMD
9-ACEPACK SMIT
STGWA30H65DFB2
STMicroelectronics

DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 167 W
  • Switching Energy: 270µJ (on), 310µJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 18.4ns/71ns
  • Test Condition: 400V, 30A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): 115 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
재고1,800
650 V
50 A
90 A
2.1V @ 15V, 30A
167 W
270µJ (on), 310µJ (off)
Standard
90 nC
18.4ns/71ns
400V, 30A, 6.8Ohm, 15V
115 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
GWA40MS120DF4AG
STMicroelectronics

IGBT TRENCH FS 1200V 80A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 536 W
  • Switching Energy: 1.5mJ (on), 3.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 147 nC
  • Td (on/off) @ 25°C: 35ns/140ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 465 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
Request a Quote
1200 V
80 A
120 A
2.3V @ 15V, 40A
536 W
1.5mJ (on), 3.3mJ (off)
Standard
147 nC
35ns/140ns
600V, 40A, 10Ohm, 15V
465 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGWT15H60F
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT H SE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 115 W
  • Switching Energy: 136µJ (on), 207µJ (off)
  • Input Type: Standard
  • Gate Charge: 81 nC
  • Td (on/off) @ 25°C: 24.5ns/118ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: -
Request a Quote
600 V
30 A
60 A
2V @ 15V, 15A
115 W
136µJ (on), 207µJ (off)
Standard
81 nC
24.5ns/118ns
400V, 15A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
STGWA20HP65FB2
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 20

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 147 W
  • Switching Energy: 214µJ (off)
  • Input Type: Standard
  • Gate Charge: 56 nC
  • Td (on/off) @ 25°C: -/78.8ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 140 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
Request a Quote
650 V
40 A
60 A
2.1V @ 15V, 20A
147 W
214µJ (off)
Standard
56 nC
-/78.8ns
400V, 20A, 10Ohm, 15V
140 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGP15M120F3
STMicroelectronics

TRENCH GATE FIELD-STOP, 1200 V,

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: 259 W
  • Switching Energy: 550µJ (on), 850µJ (off)
  • Input Type: Standard
  • Gate Charge: 53 nC
  • Td (on/off) @ 25°C: 26ns/122ns
  • Test Condition: 600V, 15A, 22Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
재고5,823
1200 V
30 A
60 A
2.3V @ 15V, 15A
259 W
550µJ (on), 850µJ (off)
Standard
53 nC
26ns/122ns
600V, 15A, 22Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
STGW40H65DFB-4
STMicroelectronics

IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 283 W
  • Switching Energy: 200µJ (on), 410µJ (off)
  • Input Type: Standard
  • Gate Charge: 210 nC
  • Td (on/off) @ 25°C: 40ns/142ns
  • Test Condition: 400V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 62 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4
패키지: -
재고1,800
650 V
80 A
160 A
2V @ 15V, 40A
283 W
200µJ (on), 410µJ (off)
Standard
210 nC
40ns/142ns
400V, 40A, 5Ohm, 15V
62 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
STGP20H65FB2
STMicroelectronics

IGBT 600V 40A 167W TO220AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 147 W
  • Switching Energy: 265µJ (on), 214µJ (off)
  • Input Type: Standard
  • Gate Charge: 56 nC
  • Td (on/off) @ 25°C: 16ns/78.8ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
Request a Quote
650 V
40 A
60 A
2.1V @ 15V, 20A
147 W
265µJ (on), 214µJ (off)
Standard
56 nC
16ns/78.8ns
400V, 20A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
STGWA35IH135DF2
STMicroelectronics

IGBT TRENCH FS 1.35KV 70A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 140 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
  • Power - Max: 416 W
  • Switching Energy: 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 258 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
재고285
1350 V
70 A
140 A
2.2V @ 15V, 30A
416 W
1.6mJ (off)
Standard
258 nC
-
600V, 30A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGW8M120DF3
STMicroelectronics

IGBT TRENCH FS 1200V 16A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 32 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
  • Power - Max: 167 W
  • Switching Energy: 390µJ (on), 370µJ (Off)
  • Input Type: Standard
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: 20ns/126ns
  • Test Condition: 600V, 8A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고1,800
1200 V
16 A
32 A
2.3V @ 15V, 8A
167 W
390µJ (on), 370µJ (Off)
Standard
32 nC
20ns/126ns
600V, 8A, 33Ohm, 15V
103 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGYA75H120DF2
STMicroelectronics

IGBT TRENCH FS 1200V 150A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
  • Power - Max: 750 W
  • Switching Energy: 4.3mJ (on), 3.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 313 nC
  • Td (on/off) @ 25°C: 61ns/366ns
  • Test Condition: 600V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 356 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고1,758
1200 V
150 A
300 A
2.6V @ 15V, 75A
750 W
4.3mJ (on), 3.9mJ (off)
Standard
313 nC
61ns/366ns
600V, 75A, 10Ohm, 15V
356 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGWA30HP65FB2
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 30

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 167 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: -/71ns
  • Test Condition: 400V, 30A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): 140 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
재고1,797
650 V
50 A
90 A
2.1V @ 15V, 30A
167 W
-
Standard
90 nC
-/71ns
400V, 30A, 6.8Ohm, 15V
140 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGP8M120DF3
STMicroelectronics

TRENCH GATE FIELD-STOP, 1200 V,

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 32 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
  • Power - Max: -
  • Switching Energy: 390µJ (on), 370µJ (Off)
  • Input Type: Standard
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: 20ns/126ns
  • Test Condition: 600V, 8A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
Request a Quote
1200 V
16 A
32 A
2.3V @ 15V, 8A
-
390µJ (on), 370µJ (Off)
Standard
32 nC
20ns/126ns
600V, 8A, 33Ohm, 15V
103 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
STGD20N45LZAG
STMicroelectronics

POWER TRANSISTORS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 450 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 125 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 26 nC
  • Td (on/off) @ 25°C: 1.1µs/4.6µs
  • Test Condition: 300V, 10A, 1kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
패키지: -
재고7,470
450 V
25 A
50 A
1.25V @ 4V, 6A
125 W
-
Logic
26 nC
1.1µs/4.6µs
300V, 10A, 1kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
STGB20H65FB2
STMicroelectronics

IGBT 600V 40A 167W D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 147 W
  • Switching Energy: 265µJ (on), 214µJ (off)
  • Input Type: Standard
  • Gate Charge: 56 nC
  • Td (on/off) @ 25°C: 16ns/78.8ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
Request a Quote
650 V
40 A
60 A
2.1V @ 15V, 20A
147 W
265µJ (on), 214µJ (off)
Standard
56 nC
16ns/78.8ns
400V, 20A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
STGD25N40LZAG
STMicroelectronics

POWER TRANSISTORS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 435 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 125 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 26 nC
  • Td (on/off) @ 25°C: 1.1µs/4.6µs
  • Test Condition: 300V, 10A, 1kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
패키지: -
재고6,351
435 V
25 A
50 A
1.25V @ 4V, 6A
125 W
-
Logic
26 nC
1.1µs/4.6µs
300V, 10A, 1kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
STGD25N36LZAG
STMicroelectronics

DISCRETE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 25.7 nC
  • Td (on/off) @ 25°C: 1.1µs/7.4µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
패키지: -
Request a Quote
350 V
25 A
50 A
1.25V @ 4V, 6A
150 W
-
Logic
25.7 nC
1.1µs/7.4µs
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
STGWA30H60DFB
STMicroelectronics

IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260 W
  • Switching Energy: 383µJ (on), 293µJ (off)
  • Input Type: Standard
  • Gate Charge: 149 nC
  • Td (on/off) @ 25°C: 37ns/146ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 53 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
Request a Quote
600 V
60 A
120 A
2V @ 15V, 30A
260 W
383µJ (on), 293µJ (off)
Standard
149 nC
37ns/146ns
400V, 30A, 10Ohm, 15V
53 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGB30H65FB
STMicroelectronics

IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260 W
  • Switching Energy: 151µJ (on), 293µJ (off)
  • Input Type: Standard
  • Gate Charge: 149 nC
  • Td (on/off) @ 25°C: 37ns/146ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
Request a Quote
650 V
60 A
120 A
2V @ 15V, 30A
260 W
151µJ (on), 293µJ (off)
Standard
149 nC
37ns/146ns
400V, 30A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
STGWA100H65DFB2
STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 1

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 145 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 441 W
  • Switching Energy: 2.2mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 288 nC
  • Td (on/off) @ 25°C: 30ns/130ns
  • Test Condition: 400V, 100A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): 123 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
Request a Quote
650 V
145 A
300 A
2V @ 15V, 100A
441 W
2.2mJ (on), 1.4mJ (off)
Standard
288 nC
30ns/130ns
400V, 100A, 2.2Ohm, 15V
123 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGWA30H65DFB
STMicroelectronics

IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260 W
  • Switching Energy: 382µJ (on), 293µJ (off)
  • Input Type: Standard
  • Gate Charge: 149 nC
  • Td (on/off) @ 25°C: 46ns/146ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 140 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
Request a Quote
650 V
60 A
120 A
2V @ 15V, 30A
260 W
382µJ (on), 293µJ (off)
Standard
149 nC
46ns/146ns
400V, 30A, 10Ohm, 15V
140 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
GWA40MS120F4AG
STMicroelectronics

IGBT TRENCH FS 1200V 80A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 536 W
  • Switching Energy: 1.5mJ (on), 3.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 147 nC
  • Td (on/off) @ 25°C: 35ns/140ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
Request a Quote
1200 V
80 A
120 A
2.3V @ 15V, 40A
536 W
1.5mJ (on), 3.3mJ (off)
Standard
147 nC
35ns/140ns
600V, 40A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGB50H65FB2
STMicroelectronics

DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 86 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 272 W
  • Switching Energy: 910µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 151 nC
  • Td (on/off) @ 25°C: 28ns/115ns
  • Test Condition: 400V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
Request a Quote
650 V
86 A
150 A
2V @ 15V, 50A
272 W
910µJ (on), 580µJ (off)
Standard
151 nC
28ns/115ns
400V, 50A, 4.7Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
STGWA50H65DFB2
STMicroelectronics

DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 86 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 272 W
  • Switching Energy: 910µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 151 nC
  • Td (on/off) @ 25°C: 28ns/115ns
  • Test Condition: 400V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
재고1,620
650 V
86 A
150 A
2V @ 15V, 50A
272 W
910µJ (on), 580µJ (off)
Standard
151 nC
28ns/115ns
400V, 50A, 4.7Ohm, 15V
92 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGWA40HP65FB2
STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 72 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 227 W
  • Switching Energy: 410µJ (off)
  • Input Type: Standard
  • Gate Charge: 153 nC
  • Td (on/off) @ 25°C: -/125ns
  • Test Condition: 400V, 40A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 140 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
재고129
650 V
72 A
120 A
2V @ 15V, 40A
227 W
410µJ (off)
Standard
153 nC
-/125ns
400V, 40A, 4.7Ohm, 15V
140 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGWA8M120DF3
STMicroelectronics

IGBT TRENCH FS 1200V 16A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 32 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
  • Power - Max: 167 W
  • Switching Energy: 390µJ (on), 370µJ (Off)
  • Input Type: Standard
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: 20ns/126ns
  • Test Condition: 600V, 8A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
재고1,800
1200 V
16 A
32 A
2.3V @ 15V, 8A
167 W
390µJ (on), 370µJ (Off)
Standard
32 nC
20ns/126ns
600V, 8A, 33Ohm, 15V
103 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STG200G65FD8AG
STMicroelectronics

IGBT TRENCH FS 650V 200A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: 5.34mJ (on), 6.23mJ (off)
  • Input Type: Standard
  • Gate Charge: 701 nC
  • Td (on/off) @ 25°C: 66.2ns/442.7ns
  • Test Condition: 400V, 200A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
650 V
200 A
600 A
1.8V @ 15V, 200A
-
5.34mJ (on), 6.23mJ (off)
Standard
701 nC
66.2ns/442.7ns
400V, 200A, 4.7Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die