페이지 11 - STMicroelectronics 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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STMicroelectronics 제품 - 트랜지스터 - IGBT - 단일

기록 427
페이지  11/16
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot STGP19NC60KD
STMicroelectronics

IGBT 600V 35A 125W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
  • Power - Max: 125W
  • Switching Energy: 165µJ (on), 255µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 30ns/105ns
  • Test Condition: 480V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고112,800
600V
35A
75A
2.75V @ 15V, 12A
125W
165µJ (on), 255µJ (off)
Standard
55nC
30ns/105ns
480V, 12A, 10 Ohm, 15V
31ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
STGB15H60DF
STMicroelectronics

IGBT 600V 30A 115W D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 115W
  • Switching Energy: 136µJ (on), 207µJ (off)
  • Input Type: Standard
  • Gate Charge: 81nC
  • Td (on/off) @ 25°C: 24.5ns/118ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 103ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,480
600V
30A
60A
2V @ 15V, 15A
115W
136µJ (on), 207µJ (off)
Standard
81nC
24.5ns/118ns
400V, 15A, 10 Ohm, 15V
103ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot STGP6NC60HD
STMicroelectronics

IGBT 600V 15A 56W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 21A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
  • Power - Max: 56W
  • Switching Energy: 20µJ (on), 68µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.6nC
  • Td (on/off) @ 25°C: 12ns/76ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 21ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고83,016
600V
15A
21A
2.5V @ 15V, 3A
56W
20µJ (on), 68µJ (off)
Standard
13.6nC
12ns/76ns
390V, 3A, 10 Ohm, 15V
21ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGD10HF60KD
STMicroelectronics

IGBT 600V 10A DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 5A
  • Power - Max: 62.5W
  • Switching Energy: 45µJ (on), 105µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 9.5ns/87ns
  • Test Condition: 400V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,376
600V
18A
30A
2.75V @ 15V, 5A
62.5W
45µJ (on), 105µJ (off)
Standard
23nC
9.5ns/87ns
400V, 5A, 10 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
hot STGD6NC60HDT4
STMicroelectronics

IGBT 600V 15A 56W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 21A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
  • Power - Max: 56W
  • Switching Energy: 20µJ (on), 68µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.6nC
  • Td (on/off) @ 25°C: 12ns/76ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 21ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고16,536
600V
15A
21A
2.5V @ 15V, 3A
56W
20µJ (on), 68µJ (off)
Standard
13.6nC
12ns/76ns
390V, 3A, 10 Ohm, 15V
21ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot STGW80H65DFB
STMicroelectronics

IGBT 650V 120A 469W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Power - Max: 469W
  • Switching Energy: 2.1mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 414nC
  • Td (on/off) @ 25°C: 84ns/280ns
  • Test Condition: 400V, 80A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고5,776
650V
120A
240A
2V @ 15V, 80A
469W
2.1mJ (on), 1.5mJ (off)
Standard
414nC
84ns/280ns
400V, 80A, 10 Ohm, 15V
85ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGW40H65DFB
STMicroelectronics

IGBT 650V 80A 283W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 283W
  • Switching Energy: 498µJ (on), 363µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 40ns/142ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,928
650V
80A
160A
2V @ 15V, 40A
283W
498µJ (on), 363µJ (off)
Standard
210nC
40ns/142ns
400V, 40A, 5 Ohm, 15V
62ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGD5NB120SZ-1
STMicroelectronics

IGBT 1200V 10A 75W IPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 10A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
  • Power - Max: 75W
  • Switching Energy: 2.59mJ (on), 9mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 690ns/12.1µs
  • Test Condition: 960V, 5A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: I-Pak
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고4,944
1200V
10A
10A
2V @ 15V, 5A
75W
2.59mJ (on), 9mJ (off)
Standard
-
690ns/12.1µs
960V, 5A, 1 kOhm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
I-Pak
hot STGD18N40LZT4
STMicroelectronics

IGBT 420V 25A 125W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 420V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 10A
  • Power - Max: 125W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 29nC
  • Td (on/off) @ 25°C: 650ns/13.5µs
  • Test Condition: 300V, 10A, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고26,400
420V
25A
40A
1.7V @ 4.5V, 10A
125W
-
Logic
29nC
650ns/13.5µs
300V, 10A, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot STGB20NB41LZT4
STMicroelectronics

IGBT 442V 40A 200W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 442V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
  • Power - Max: 200W
  • Switching Energy: 5mJ (on), 12.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 1µs/12.1µs
  • Test Condition: 320V, 20A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고78,972
442V
40A
80A
2V @ 4.5V, 20A
200W
5mJ (on), 12.9mJ (off)
Standard
46nC
1µs/12.1µs
320V, 20A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGB3NC120HDT4
STMicroelectronics

IGBT 1200V 14A 75W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 75W
  • Switching Energy: 236µJ (on), 290µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 15ns/118ns
  • Test Condition: 800V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 51ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,520
1200V
14A
20A
2.8V @ 15V, 3A
75W
236µJ (on), 290µJ (off)
Standard
24nC
15ns/118ns
800V, 3A, 10 Ohm, 15V
51ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot STGD5NB120SZT4
STMicroelectronics

IGBT 1200V 10A 75W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 10A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
  • Power - Max: 75W
  • Switching Energy: 2.59mJ (on), 9mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 690ns/12.1µs
  • Test Condition: 960V, 5A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고21,600
1200V
10A
10A
2V @ 15V, 5A
75W
2.59mJ (on), 9mJ (off)
Standard
-
690ns/12.1µs
960V, 5A, 1 kOhm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
STGWA25S120DF3
STMicroelectronics

IGBT 1200V 25A TO247-3L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 375W
  • Switching Energy: 830µJ (on), 2.37mJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 31ns/147ns
  • Test Condition: 600V, 25A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 265ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고6,804
1200V
50A
100A
2.1V @ 15V, 25A
375W
830µJ (on), 2.37mJ (off)
Standard
80nC
31ns/147ns
600V, 25A, 15 Ohm, 15V
265ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGW25S120DF3
STMicroelectronics

IGBT 1200V 25A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 375W
  • Switching Energy: 830µJ (on), 2.37mJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 31ns/147ns
  • Test Condition: 600V, 25A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 265ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고6,900
1200V
50A
100A
2.1V @ 15V, 25A
375W
830µJ (on), 2.37mJ (off)
Standard
80nC
31ns/147ns
600V, 25A, 15 Ohm, 15V
265ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGWA25H120DF2
STMicroelectronics

IGBT HB 1200V 25A HS TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
  • Power - Max: 375W
  • Switching Energy: 600µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 29ns/130ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 303ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고5,376
1200V
50A
100A
2.6V @ 15V, 25A
375W
600µJ (on), 700µJ (off)
Standard
100nC
29ns/130ns
600V, 25A, 10 Ohm, 15V
303ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STGW80H65FB
STMicroelectronics

IGBT 650V 120A 469W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Power - Max: 469W
  • Switching Energy: 2.1mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 414nC
  • Td (on/off) @ 25°C: 84ns/280ns
  • Test Condition: 400V, 80A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고3,840
650V
120A
240A
2V @ 15V, 80A
469W
2.1mJ (on), 1.5mJ (off)
Standard
414nC
84ns/280ns
400V, 80A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGWT80H65DFB
STMicroelectronics

IGBT 650V 120A 469W TO3P-3L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Power - Max: 469W
  • Switching Energy: 2.1mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 414nC
  • Td (on/off) @ 25°C: 84ns/280ns
  • Test Condition: 400V, 80A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고6,024
650V
120A
240A
2V @ 15V, 80A
469W
2.1mJ (on), 1.5mJ (off)
Standard
414nC
84ns/280ns
400V, 80A, 10 Ohm, 15V
85ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
STGWA15S120DF3
STMicroelectronics

IGBT 1200V 15A TO247-3L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
  • Power - Max: 259W
  • Switching Energy: 540µJ (on), 1.38mJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 23ns/140ns
  • Test Condition: 600V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 270ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고5,024
1200V
30A
60A
2.05V @ 15V, 15A
259W
540µJ (on), 1.38mJ (off)
Standard
53nC
23ns/140ns
600V, 15A, 22 Ohm, 15V
270ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGW15S120DF3
STMicroelectronics

IGBT 1200V 15A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
  • Power - Max: 259W
  • Switching Energy: 540µJ (on), 1.38mJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 23ns/140ns
  • Test Condition: 600V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 270ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고4,736
1200V
30A
60A
2.05V @ 15V, 15A
259W
540µJ (on), 1.38mJ (off)
Standard
53nC
23ns/140ns
600V, 15A, 22 Ohm, 15V
270ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGP30NC60K
STMicroelectronics

IGBT 600V 60A 185W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 125A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Power - Max: 185W
  • Switching Energy: 350µJ (on), 435µJ (off)
  • Input Type: Standard
  • Gate Charge: 96nC
  • Td (on/off) @ 25°C: 29ns/120ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고16,716
600V
60A
125A
2.7V @ 15V, 20A
185W
350µJ (on), 435µJ (off)
Standard
96nC
29ns/120ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGWA30M65DF2
STMicroelectronics

IGBT 650V 30A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 258W
  • Switching Energy: 300µJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 31.6ns/115ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: TO-247-3
재고7,728
650V
60A
120A
2V @ 15V, 30A
258W
300µJ (on), 960µJ (off)
Standard
80nC
31.6ns/115ns
400V, 30A, 10 Ohm, 15V
140ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGB30V60DF
STMicroelectronics

IGBT 600V 60A 258W D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 258W
  • Switching Energy: 383µJ (on), 233µJ (off)
  • Input Type: Standard
  • Gate Charge: 163nC
  • Td (on/off) @ 25°C: 45ns/189ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 53ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,208
600V
60A
120A
2.3V @ 15V, 30A
258W
383µJ (on), 233µJ (off)
Standard
163nC
45ns/189ns
400V, 30A, 10 Ohm, 15V
53ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot STGW30H65FB
STMicroelectronics

IGBT 650V 30A 260W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260W
  • Switching Energy: 151µJ (on), 293µJ (off)
  • Input Type: Standard
  • Gate Charge: 149nC
  • Td (on/off) @ 25°C: 37ns/146ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고4,608
650V
30A
120A
2V @ 15V, 30A
260W
151µJ (on), 293µJ (off)
Standard
149nC
37ns/146ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGFW20V60F
STMicroelectronics

IGBT 600V 40A 52W TO3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 52W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
패키지: TO-3P-3 Full Pack
재고7,680
600V
40A
80A
2.2V @ 15V, 20A
52W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
STGW20V60F
STMicroelectronics

IGBT 600V 40A 167W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고17,844
600V
40A
80A
2.2V @ 15V, 20A
167W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGP30V60DF
STMicroelectronics

IGBT 600V 60A 258W TO220AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 258W
  • Switching Energy: 383µJ (on), 233µJ (off)
  • Input Type: Standard
  • Gate Charge: 163nC
  • Td (on/off) @ 25°C: 45ns/189ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 53ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고20,664
600V
60A
120A
2.3V @ 15V, 30A
258W
383µJ (on), 233µJ (off)
Standard
163nC
45ns/189ns
400V, 30A, 10 Ohm, 15V
53ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
STGB10M65DF2
STMicroelectronics

IGBT 650V 10A D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
  • Power - Max: 115W
  • Switching Energy: 120µJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 19ns/91ns
  • Test Condition: 400V, 10A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 96ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,320
650V
20A
40A
2V @ 15V, 10A
115W
120µJ (on), 270µJ (off)
Standard
28nC
19ns/91ns
400V, 10A, 22 Ohm, 15V
96ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGB30H60DLFB
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, HB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260W
  • Switching Energy: 393µJ (off)
  • Input Type: Standard
  • Gate Charge: 149nC
  • Td (on/off) @ 25°C: -/146ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,984
600V
60A
120A
2V @ 15V, 30A
260W
393µJ (off)
Standard
149nC
-/146ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK