페이지 120 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
BZD27C24PHRTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 24V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 24.2V Tolerance: ±5.78% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 18V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고5,744
BZD27C11PHRQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 11V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 11V Tolerance: ±5.45% Power - Max: 1W Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 4µA @ 8.2V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,608
1SMA5940HR3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 43V, 1500MW, 5%, A Voltage - Zener (Nom) (Vz): 43V Tolerance: ±5% Power - Max: 1.5W Impedance (Max) (Zzt): 53 Ohms Current - Reverse Leakage @ Vr: 500nA @ 32.7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고2,640
BZD17C15P MTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 15V Tolerance: ±6% Power - Max: 800mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1µA @ 11V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,672
1SMA200Z M2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 200V, 1000MW, %, D Voltage - Zener (Nom) (Vz): 200V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 1500 Ohms Current - Reverse Leakage @ Vr: 1µA @ 152V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고3,344
1SMA4747 M2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 20V, 1000MW, %, DO Voltage - Zener (Nom) (Vz): 20V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 22 Ohms Current - Reverse Leakage @ Vr: 1µA @ 15.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고2,080
BZD17C18P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 18V Tolerance: ±6.38% Power - Max: 800mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 13V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고3,344
1M130ZHR1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 130V, 1000MW, 5%, Voltage - Zener (Nom) (Vz): 130V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 700 Ohms Current - Reverse Leakage @ Vr: 5µA @ 98.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고3,760
BZX85C8V2 R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 8.2V, 1300MW, 5%, Voltage - Zener (Nom) (Vz): 8.2V Tolerance: ±5% Power - Max: 1.3W Impedance (Max) (Zzt): 5 Ohms Current - Reverse Leakage @ Vr: 1µA @ 6.2V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고7,424
BZT55B2V7 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 2.7V, 500MW, 2%, Q Voltage - Zener (Nom) (Vz): 2.7V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 10µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: Mini MELF	패키지: SOD-80 Variant	재고4,624
BZX55C16 A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 16V, 500MW, 5%, DO Voltage - Zener (Nom) (Vz): 16V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 100nA @ 12V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	패키지: DO-204AH, DO-35, Axial	재고4,512
TS6P07G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 6A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고3,632
BZD17C180P	Taiwan Semiconductor Corporation	SUB SMA, 800MW, 6%, ZENER DIODE Voltage - Zener (Nom) (Vz): 180 V Tolerance: ±6.41% Power - Max: 800 mW Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 130 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA	패키지: -	Request a Quote
TSA884CX	Taiwan Semiconductor Corporation	SOT-23, -500V, -0.15A, PNP BIPOL Transistor Type: PNP Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 500 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V Power - Max: 300 mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote
GP1005	Taiwan Semiconductor Corporation	DIODE ARRAY GP 600V 10A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	Request a Quote
RS3K	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고8,670
BZT52B2V4	Taiwan Semiconductor Corporation	SOD-123F, 500MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 2.4 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 45 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	패키지: -	Request a Quote
BZT52C62S	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 62 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 215 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 43.4 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	Request a Quote
ZM4749A	Taiwan Semiconductor Corporation	MELF, 1000MW, 5%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 24 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF	패키지: -	Request a Quote
HS15JLW	Taiwan Semiconductor Corporation	75NS, 1.5A, 600V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고60,000
BZX79B5V1	Taiwan Semiconductor Corporation	DO-35, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 5.1 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 2 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	패키지: -	Request a Quote
S1M-JR2	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote
TSZU52C20	Taiwan Semiconductor Corporation	603, 150MW, 5%, SMALL SIGNAL ZEN Voltage - Zener (Nom) (Vz): 20 V Tolerance: ±5% Power - Max: 150 mW Impedance (Max) (Zzt): 50 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 15 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603	패키지: -	Request a Quote
MBRS2545CT	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 45V 25A TO263AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io) (per Diode): 25A Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	패키지: -	Request a Quote
TSM056NH04LCV-RGG	Taiwan Semiconductor Corporation	40V, 54A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2076 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3.1x3.1) Package / Case: 8-PowerWDFN	패키지: -	재고29,865
S1G-KR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote
RS5J-T	Taiwan Semiconductor Corporation	250NS, 5A, 600V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 46pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고9,000
GBPC4008	Taiwan Semiconductor Corporation	40A, 800V, STANDARD BRIDGE RECTI Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	패키지: -	재고600