페이지 128 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
1SMB5934 R5G	Taiwan Semiconductor Corporation	DIODE, ZENER, 24V, 3000MW, 5%, D Voltage - Zener (Nom) (Vz): 24V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 19 Ohms Current - Reverse Leakage @ Vr: 1µA @ 18.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: DO-214AA, SMB	재고7,712
1N4753A B0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 36V, 1000MW, 5%, D Voltage - Zener (Nom) (Vz): 36V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 50 Ohms Current - Reverse Leakage @ Vr: 5µA @ 27.4V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고4,304
1SMA4753HM2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 36V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 36V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 50 Ohms Current - Reverse Leakage @ Vr: 1µA @ 27.4V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고7,936
1SMA4757 M2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 51V, 1000MW, %, DO Voltage - Zener (Nom) (Vz): 51V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 95 Ohms Current - Reverse Leakage @ Vr: 1µA @ 38.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고6,112
BZT52C5V1K RKG	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.1V, 200MW, 5%, S Voltage - Zener (Nom) (Vz): 5.1V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 2µA @ 1.5V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	패키지: SC-79, SOD-523	재고4,480
BZT55B12 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 12V, 500MW, 2%, QM Voltage - Zener (Nom) (Vz): 12V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 100nA @ 9.1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: Mini MELF	패키지: SOD-80 Variant	재고7,408
MTZJ20SA R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 18.49V, 500MW, %, Voltage - Zener (Nom) (Vz): 18.49V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 55 Ohms Current - Reverse Leakage @ Vr: 200nA @ 15V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	패키지: DO-204AG, DO-34, Axial	재고4,064
1N5237B A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 8.2V, 500MW, 5%, D Voltage - Zener (Nom) (Vz): 8.2V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 8 Ohms Current - Reverse Leakage @ Vr: 3µA @ 6.5V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Operating Temperature: 100°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	패키지: DO-204AH, DO-35, Axial	재고7,040
1N5225B A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 3V, 500MW, 5%, DO- Voltage - Zener (Nom) (Vz): 3V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 29 Ohms Current - Reverse Leakage @ Vr: 50µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Operating Temperature: 100°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	패키지: DO-204AH, DO-35, Axial	재고7,696
BZX55B12 A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 12V, 500MW, 2%, DO Voltage - Zener (Nom) (Vz): 12V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 100nA @ 9.1V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	패키지: DO-204AH, DO-35, Axial	재고6,784
GBU407 D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 4A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고4,592
SF2006PTH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고2,700
BZD17C11PH	Taiwan Semiconductor Corporation	SUB SMA, 800MW, 6%, ZENER DIODE Voltage - Zener (Nom) (Vz): 11 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 4 µA @ 8.2 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA	패키지: -	Request a Quote
HER3L05G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 54pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
RS2K	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고17,970
BZD27C62PH	Taiwan Semiconductor Corporation	SUB SMA, 1000MW, 6%, ZENER DIODE Voltage - Zener (Nom) (Vz): 62 V Tolerance: ±6.45% Power - Max: 1 W Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 47 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA	패키지: -	Request a Quote
RMB6SH	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 500MA MBS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-BESOP (0.173", 4.40mm Width) Supplier Device Package: MBS	패키지: -	재고9,000
1PGSMC5367-V7G	Taiwan Semiconductor Corporation	DIODE ZENER 5W DO214AB Voltage - Zener (Nom) (Vz): 43 V Tolerance: ±5% Power - Max: 5 W Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 32.7 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC)	패키지: -	Request a Quote
TQM050NB06CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 60V 16A/104A PDFN56U FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-PDFNU (5x6) Package / Case: 8-PowerTDFN	패키지: -	재고8,847
MTZJ6V8SB	Taiwan Semiconductor Corporation	DO-34, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 6.8 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	패키지: -	Request a Quote
SS14ALH	Taiwan Semiconductor Corporation	1A, 40V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 69pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
TSM018NB03CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 30V 29A/194A 8PDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 194A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7252 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	패키지: -	재고14,910
TSD10L200CW	Taiwan Semiconductor Corporation	DIODE ARRAY SCHOT 10A TO263AB Diode Configuration: - Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io) (per Diode): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	패키지: -	Request a Quote
SFAF804G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
SS310LWH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고57,030
TSM085NB03CV	Taiwan Semiconductor Corporation	30V, 58A, SINGLE N-CHANNEL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1101 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.92W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3.15x3.1) Package / Case: 8-PowerWDFN	패키지: -	Request a Quote
TS3480CX50	Taiwan Semiconductor Corporation	100MA 5V LOW QUIESCENT CURRENT L Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 35V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 1.1V @ 100mA Current - Output: 100mA Current - Quiescent (Iq): 5 mA Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote
TS4K60-A	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 4A TS4K Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS4K Supplier Device Package: TS4K	패키지: -	재고8,871