Taiwan Semiconductor Corporation 제품

1SMB5951HR5G

Taiwan Semiconductor Corporation

DIODE, ZENER, 120V, 3000MW, 5%,

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 360 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 91.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

패키지: DO-214AA, SMB

BZD27C13P RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 13.25V
• Tolerance: ±6.41%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 10V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

패키지: DO-219AB

1N4761AHA0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 75V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 175 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 56V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

1M200Z B0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 200V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 1500 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 152V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

ZM4735A L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 6.2V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF

패키지: DO-213AB, MELF

BZX85C43 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1300MW, 5%, D

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 30V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

BZX55B33 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 500MW, 2%, DO

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 24V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

패키지: DO-204AH, DO-35, Axial

TSS4B03GHC2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SUPER FAST, 4A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 980mV @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-4B
• Supplier Device Package: TS4B

패키지: 4-SIP, TS-4B

BZT52C3V0S-R9G

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 3 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 9 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

패키지: -

ES3J-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

T15JA06G-K

Taiwan Semiconductor Corporation

15A, 800V, STANDARD BRIDGE RECTI

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 15 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

패키지: -

MUR105S

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 50 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

S8MC

Taiwan Semiconductor Corporation

DIODE GEN PURP 8A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Capacitance @ Vr, F: 48pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

ES2GAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A THIN SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 16pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

UG8J

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 30 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

BZT52C9V1K

Taiwan Semiconductor Corporation

SOD-523F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 9.1 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 6 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

패키지: -

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SS210L

Taiwan Semiconductor Corporation

2A, 100V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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UG54G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

TSM055N03PQ56

Taiwan Semiconductor Corporation

30V, 80A, SINGLE N-CHANNEL POWER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 74W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (5x5.8)
• Package / Case: 8-PowerTDFN

패키지: -

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UGF5JH

Taiwan Semiconductor Corporation

25NS, 5A, 600V, ULTRA FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 30 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

KBP103G-C2G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 200V 1A KBP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200 V
• Current - Average Rectified (Io): 1 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBP
• Supplier Device Package: KBP

패키지: -

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RS1KLS

Taiwan Semiconductor Corporation

DIODE GP 800V 1.2A SOD123HE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1.2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123H
• Supplier Device Package: SOD-123HE
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

BZX584B56-RSG

Taiwan Semiconductor Corporation

SOD-523F, 150MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 56 V
• Tolerance: ±2%
• Power - Max: 150 mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 43 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

패키지: -

BZT52B68

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 68 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 240 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 47.6 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

패키지: -

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1N4740AH

Taiwan Semiconductor Corporation

DIODE ZENER 10V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 10 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: -

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BZX84C3V0

Taiwan Semiconductor Corporation

SOT-23, 300MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 3 V
• Tolerance: ±6.67%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: -

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2A04G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

MMSZ4697-RHG

Taiwan Semiconductor Corporation

SOD-123, 500MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 10 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: -

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