페이지 22 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
2M6.8ZHR0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.8V, 2000MW, %, A Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 1.5 Ohms Current - Reverse Leakage @ Vr: 1mA @ 5.5V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	패키지: DO-204AC, DO-15, Axial	재고5,632
2M15ZHR0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 2000MW, %, AE Voltage - Zener (Nom) (Vz): 15V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 500nA @ 11.4V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	패키지: DO-204AC, DO-15, Axial	재고2,100
1SMB5955HR5G	Taiwan Semiconductor Corporation	DIODE, ZENER, 180V, 3000MW, 5%, Voltage - Zener (Nom) (Vz): 180V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 900 Ohms Current - Reverse Leakage @ Vr: 1µA @ 136.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: DO-214AA, SMB	재고6,704
1SMA5942HR3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 51V, 1500MW, 5%, A Voltage - Zener (Nom) (Vz): 51V Tolerance: ±5% Power - Max: 1.5W Impedance (Max) (Zzt): 70 Ohms Current - Reverse Leakage @ Vr: 500nA @ 38.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고4,016
1N4745AHA0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 16V, 1000MW, 5%, A Voltage - Zener (Nom) (Vz): 16V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 22 Ohms Current - Reverse Leakage @ Vr: 5µA @ 12.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고3,168
BZX584B6V2 RKG	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.2V, 150MW, 2%, S Voltage - Zener (Nom) (Vz): 6.2V Tolerance: ±2% Power - Max: 150mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 3µA @ 4V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	패키지: SC-79, SOD-523	재고6,368
BZD17C13P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 13V Tolerance: ±6.53% Power - Max: 800mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 2µA @ 10V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고6,784
TSZL52C10 RWG	Taiwan Semiconductor Corporation	DIODE, ZENER, 10V, 200MW, 5%, 10 Voltage - Zener (Nom) (Vz): 10V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 100nA @ 7.5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005	패키지: 1005 (2512 Metric)	재고6,368
BZT52B2V7 RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 2.7V, 500MW, 2%, S Voltage - Zener (Nom) (Vz): 2.7V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 18µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	패키지: SOD-123F	재고7,712
BZT55B75 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 75V, 500MW, 2%, QM Voltage - Zener (Nom) (Vz): 75V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 170 Ohms Current - Reverse Leakage @ Vr: 100nA @ 56V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: Mini MELF	패키지: SOD-80 Variant	재고2,144
DBL208G C1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 2A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 1200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: 4-DIP (0.300", 7.62mm)	재고2,672
BZV55B5V6	Taiwan Semiconductor Corporation	MMELF, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 5.6 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	패키지: -	Request a Quote
TS78L12ACY	Taiwan Semiconductor Corporation	3-TERMINAL 100MA FIXED 12V VOLTA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 35V Voltage - Output (Min/Fixed): 12V Voltage - Output (Max): - Voltage Dropout (Max): 1.7V @ 100mA Current - Output: 100mA Current - Quiescent (Iq): 6.5 mA Current - Supply (Max): - PSRR: 42dB (120Hz) Control Features: Current Limit Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	Request a Quote
HERAF1008GH	Taiwan Semiconductor Corporation	80NS, 10A, 1000V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 1 kV Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000
S2DALH	Taiwan Semiconductor Corporation	2A, 200V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고84,000
GBU1005H	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 10A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote
HDBLS104GH	Taiwan Semiconductor Corporation	50NS, 1A, 400V, HIGH EFFICIENT R Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	패키지: -	재고9,000
TSM900N06CW	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 60V 6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.8W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	패키지: -	Request a Quote
RSFGL	Taiwan Semiconductor Corporation	DIODE GP 400V 500MA SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고44,712
SR2090PTH	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 90V 20A TO247AD Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io) (per Diode): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 90 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P)	패키지: -	Request a Quote
HERF1604G	Taiwan Semiconductor Corporation	DIODE ARRAY GP 300V 16A ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io) (per Diode): 16A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	패키지: -	재고3,000
ES15GLW-RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 21pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
SS115LW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고16,929
M3Z47VC	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 47 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 110 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 35 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	Request a Quote
RS2KFL	Taiwan Semiconductor Corporation	250NS, 2A, 800V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고29,985
BZT52B2V4S	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 2.4 V Tolerance: ±2% Power - Max: 200 mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 45 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	Request a Quote
1PGSMA4749HR3G	Taiwan Semiconductor Corporation	DIODE ZENER 24V 1.25W DO214AC Voltage - Zener (Nom) (Vz): 24 V Tolerance: ±5% Power - Max: 1.25 W Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: -	재고4,533
MUR315SB	Taiwan Semiconductor Corporation	25NS, 3A, 150V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고18,000