페이지 30 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
BZD27C15P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 14.7V Tolerance: ±6.12% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1µA @ 11V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,560
BZD17C75P R3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 75V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 75V Tolerance: ±6% Power - Max: 800mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 1µA @ 56V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고5,088
1SMB5927HM4G	Taiwan Semiconductor Corporation	DIODE, ZENER, 12V, 3000MW, 5%, A Voltage - Zener (Nom) (Vz): 12V Tolerance: ±5% Power - Max: 3W Impedance (Max) (Zzt): 6.5 Ohms Current - Reverse Leakage @ Vr: 1µA @ 9.1V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: DO-214AA, SMB	재고6,208
1N4755A A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 43V, 1000MW, 5%, D Voltage - Zener (Nom) (Vz): 43V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 70 Ohms Current - Reverse Leakage @ Vr: 5µA @ 32.7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고3,344
1N4750AHR0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 1000MW, 5%, A Voltage - Zener (Nom) (Vz): 27V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 35 Ohms Current - Reverse Leakage @ Vr: 5µA @ 20.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고5,168
1SMA4764HM2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 100V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 100V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 350 Ohms Current - Reverse Leakage @ Vr: 1µA @ 76V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고4,928
BZX585B51 RKG	Taiwan Semiconductor Corporation	DIODE, ZENER, 51V, 200MW, 2%, SO Voltage - Zener (Nom) (Vz): 51V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 180 Ohms Current - Reverse Leakage @ Vr: 45nA @ 35.7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	패키지: SC-79, SOD-523	재고4,832
UDZS4V3B RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 4.3V, 200MW, 2%, S Voltage - Zener (Nom) (Vz): 4.3V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 2.7µA @ 1V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: SC-90, SOD-323F	재고6,208
BZY55B5V6 RYG	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.6V, 500MW, 2%, 0 Voltage - Zener (Nom) (Vz): 5.6V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 100nA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	패키지: 0805 (2012 Metric)	재고5,824
MTZJ39SE R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 38.33V, 500MW, %, Voltage - Zener (Nom) (Vz): 38.33V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 200nA @ 30V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	패키지: DO-204AG, DO-34, Axial	재고5,728
MTZJ7V5A R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 7.04V, 500MW, 2.7% Voltage - Zener (Nom) (Vz): 7.04V Tolerance: ±2.7% Power - Max: 500mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 500nA @ 4V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	패키지: DO-204AG, DO-34, Axial	재고2,368
TS50P06G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 50A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고3,008
TS50P05G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 50A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고4,880
TS9015CX5 RFG	Taiwan Semiconductor Corporation	IC REG LINEAR 300MA Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,232
ES3J-R6	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
SK52C-V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
S1DLW	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고60,000
1SMA5949H	Taiwan Semiconductor Corporation	DIODE ZENER 100V 1.5W DO214AC Voltage - Zener (Nom) (Vz): 100 V Tolerance: ±5% Power - Max: 1.5 W Impedance (Max) (Zzt): 250 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 76 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: -	Request a Quote
ZM4738A	Taiwan Semiconductor Corporation	MELF, 1000MW, 5%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 8.2 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 4.5 Ohms Current - Reverse Leakage @ Vr: 10 µA @ 6 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF	패키지: -	Request a Quote
TUAS4DH	Taiwan Semiconductor Corporation	4A, 200V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 33pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000
GBU607	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 6A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	재고6,501
RS1DF-T	Taiwan Semiconductor Corporation	150NS, 1A, 200V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고22,500
BZT55C4V3	Taiwan Semiconductor Corporation	QMMELF, 500MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 4.3 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 75 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: QMMELF	패키지: -	Request a Quote
TSZU52C3V3	Taiwan Semiconductor Corporation	603, 150MW, 5%, SMALL SIGNAL ZEN Voltage - Zener (Nom) (Vz): 3.3 V Tolerance: ±5% Power - Max: 150 mW Impedance (Max) (Zzt): 95 Ohms Current - Reverse Leakage @ Vr: 25 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603	패키지: -	Request a Quote
TS358CS	Taiwan Semiconductor Corporation	DUAL OPERATING AMPLIFIER Amplifier Type: General Purpose Number of Circuits: 2 Output Type: Single-Ended Slew Rate: 0.4V/µs Gain Bandwidth Product: 1 MHz -3db Bandwidth: - Current - Input Bias: 45 nA Voltage - Input Offset: 2 mV Current - Supply: 1.5mA Current - Output / Channel: 40 mA Voltage - Supply, Single/Dual (±): - Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote
S1GFSH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고84,000
HER208G	Taiwan Semiconductor Corporation	DIODE GEN PURP 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고11,334
S4B-R6	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote