Taiwan Semiconductor Corporation 제품

BZD17C100P RUG

Taiwan Semiconductor Corporation

DIODE, ZENER, 100V, 800MW, %, SU

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±6%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

패키지: DO-219AB

BZD27C150P RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 150V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 147V
• Tolerance: ±6.12%
• Power - Max: 1W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 110V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

패키지: DO-219AB

BZD17C36P RTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 36V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5.55%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 27V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

패키지: DO-219AB

BZT52B75S RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 75V, 200MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 255 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 52.5V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

패키지: SC-90, SOD-323F

BZS55B4V7 RXG

Taiwan Semiconductor Corporation

DIODE, ZENER, 4.7V, 500MW, 2%, 1

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206

패키지: 1206 (3216 Metric)

BZV55C8V2 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 8.2V, 500MW, 5%, M

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 6.2V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

패키지: DO-213AC, MINI-MELF, SOD-80

TS6P04G D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

GBL202HD2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBL
• Supplier Device Package: GBL

패키지: 4-SIP, GBL

EABS1JHRGG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SUPER FAST, 1A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

패키지: 4-SMD, Gull Wing

TS79M05CP ROG

Taiwan Semiconductor Corporation

IC REG LINEAR -5V 500MA

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: 0°C ~ 125°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TS34063CS RLG

Taiwan Semiconductor Corporation

SWITCHING REGULATOR, DC-DC, BUCK

• Output Type: Transistor Driver
• Function: Step-Up, Step-Down
• Output Configuration: Positive
• Topology: Buck, Boost
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 3 V ~ 40 V
• Frequency - Switching: 33kHz
• Duty Cycle (Max): -
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

MMBD3004SE

Taiwan Semiconductor Corporation

SOT-23, 350V, 0.225A, SWITCHING

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 350 V
• Current - Average Rectified (Io): 225mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 240 V
• Capacitance @ Vr, F: 5pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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TS5204CX50

Taiwan Semiconductor Corporation

80MA 5V ULTRA LOW DROPOUT VOLTAG

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 80mA
• Current - Output: 80mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 3.1 mA
• PSRR: 65dB (100Hz)
• Control Features: Current Limit
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: -

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HER208GH

Taiwan Semiconductor Corporation

75NS, 2A, 1000V, HIGH EFFICIENT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

BZT52C5V1S

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 5.1 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 1.8 µA @ 2 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

패키지: -

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2M75ZH

Taiwan Semiconductor Corporation

DIODE ZENER 75V 2W DO204AC

• Voltage - Zener (Nom) (Vz): 75 V
• Tolerance: ±5%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 56 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: -

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SS14LW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A SOD123W

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

HS2KAF-T

Taiwan Semiconductor Corporation

75NS, 2A, 800V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: SMAF
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

DBL203G

Taiwan Semiconductor Corporation

DIODE BRIDGE 2A 200V DBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200 V
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
• Current - Reverse Leakage @ Vr: 2 µA @ 200 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

패키지: -

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DBL207GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 2A DBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
• Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

패키지: -

BZT55C5V1

Taiwan Semiconductor Corporation

QMMELF, 500MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 5.1 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: QMMELF

패키지: -

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RS1JLS

Taiwan Semiconductor Corporation

DIODE GP 600V 1.2A SOD123HE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1.2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123H
• Supplier Device Package: SOD-123HE
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

BZT52B24-G

Taiwan Semiconductor Corporation

SOD-123, 410MW, 2%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 24 V
• Tolerance: ±2%
• Power - Max: 410 mW
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: -

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RS5D-T

Taiwan Semiconductor Corporation

150NS, 5A, 200V, FAST RECOVERY R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 57pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

KBU401G

Taiwan Semiconductor Corporation

DIODE BRIDGE 4A 50V KBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50 V
• Current - Average Rectified (Io): 4 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBU
• Supplier Device Package: KBU

패키지: -

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MBR25H45CT-C0

Taiwan Semiconductor Corporation

DIODE

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

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SR110H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 1A DO204AL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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KBP155G-C2G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 1.5A KBP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 1.5 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBP
• Supplier Device Package: KBP

패키지: -

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