페이지 74 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
BZD27C91PHM2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 91V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 90.5V Tolerance: ±6.07% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 68V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고3,040
BZD27C10P MTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 10V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 10V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 4 Ohms Current - Reverse Leakage @ Vr: 7µA @ 7.5V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,960
BZD27C9V1PHRHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 9.1V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 9.05V Tolerance: ±6.07% Power - Max: 1W Impedance (Max) (Zzt): 4 Ohms Current - Reverse Leakage @ Vr: 10µA @ 5V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,256
BZD27C43PHRHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 43V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 43V Tolerance: ±6.97% Power - Max: 1W Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 1µA @ 33V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고5,424
BZD27C180P RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 180V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 179.5V Tolerance: ±6.4% Power - Max: 1W Impedance (Max) (Zzt): 450 Ohms Current - Reverse Leakage @ Vr: 1µA @ 130V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,880
1N4741AHR0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 11V, 1000MW, 5%, A Voltage - Zener (Nom) (Vz): 11V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 22 Ohms Current - Reverse Leakage @ Vr: 5µA @ 15.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고3,504
1SMA4758 M2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 56V, 1000MW, %, DO Voltage - Zener (Nom) (Vz): 56V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 110 Ohms Current - Reverse Leakage @ Vr: 1µA @ 42.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고7,296
1N4757G R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 51V, 1000MW, 5%, D Voltage - Zener (Nom) (Vz): 51V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 95 Ohms Current - Reverse Leakage @ Vr: 5µA @ 38.8V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -65°C ~ 200°C (TA) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고4,144
TSZL52C18 RWG	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 200MW, 5%, 10 Voltage - Zener (Nom) (Vz): 18V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 50 Ohms Current - Reverse Leakage @ Vr: 100nA @ 14V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005	패키지: 1005 (2512 Metric)	재고3,424
TSZU52C11 RGG	Taiwan Semiconductor Corporation	DIODE, ZENER, 11V, 150MW, 5%, 06 Voltage - Zener (Nom) (Vz): 11V Tolerance: ±5% Power - Max: 150mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 100nA @ 8.5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: 0603	패키지: 0201 (0603 Metric)	재고4,848
BZX85C24 R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 24V, 1300MW, 5%, D Voltage - Zener (Nom) (Vz): 24V Tolerance: ±5% Power - Max: 1.3W Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 500nA @ 18V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고3,568
BZX79B5V1 A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.1V, 500MW, 2%, D Voltage - Zener (Nom) (Vz): 5.1V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 2mA @ 2V Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	패키지: DO-204AH, DO-35, Axial	재고2,320
TS50P05GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 50A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고2,032
RDBLS207G C1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, FAST, 2A, 1000 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	패키지: 4-SMD, Gull Wing	재고3,456
DBL102G C1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 2µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: 4-DIP (0.300", 7.62mm)	재고3,104
TS78L15CT A3G	Taiwan Semiconductor Corporation	IC REG LINEAR 15V 100MA Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 100mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: 0°C ~ 150°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,888
DBL158GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 1.2KV 1.5A DBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: -	재고15,000
BZD27C12PW	Taiwan Semiconductor Corporation	DIODE ZENER 12V 1W SOD123W Voltage - Zener (Nom) (Vz): 12 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W	패키지: -	재고64,863
ES2BAH	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
MMSZ5225B	Taiwan Semiconductor Corporation	SOD-123F, 500MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 3 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 29 Ohms Current - Reverse Leakage @ Vr: 50 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	패키지: -	Request a Quote
1PGSMC5352H	Taiwan Semiconductor Corporation	DIODE ZENER 15V 5W DO214AB Voltage - Zener (Nom) (Vz): 15 V Tolerance: ±5% Power - Max: 5 W Impedance (Max) (Zzt): 3 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC)	패키지: -	재고8,994
TQM130NB06CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 60V 10A/50A 8PDFNU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2234 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-PDFNU (5x6) Package / Case: 8-PowerTDFN	패키지: -	재고11,889
DBL202GH	Taiwan Semiconductor Corporation	DIODE BRIDGE 2A 100V DBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: -	Request a Quote
TUAU8KH	Taiwan Semiconductor Corporation	80NS, 8A, 800V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 43pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000
SF18GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고14,985
TSM4NB65CI	Taiwan Semiconductor Corporation	650V, 4A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3.37Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: -	Request a Quote
BAT46GW	Taiwan Semiconductor Corporation	0.25A, 100V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 39pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote
M3Z10VC-RRG	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 10 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	재고9,000