페이지 92 - Taiwan Semiconductor Corporation 제품 | Heisener Electronics
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Taiwan Semiconductor Corporation 제품

기록 4,299
페이지  92/154
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BZD27C8V2PHRVG
Taiwan Semiconductor Corporation

DIODE, ZENER, 8.2V, 1000MW, %, A

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±6.09%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 2 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
패키지: DO-219AB
재고5,360
1N4740AHB0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 10V, 1000MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 10V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 8 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 8.4V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고2,064
BZD17C15P RFG
Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 800MW, %, SUB

  • Voltage - Zener (Nom) (Vz): 15V
  • Tolerance: ±6%
  • Power - Max: 800mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 11V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
패키지: DO-219AB
재고4,592
1M120Z B0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 120V, 1000MW, 5%,

  • Voltage - Zener (Nom) (Vz): 120V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 550 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 91.2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고3,760
BZT52C2V7-G RHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 2.7V, 350MW, 5%, S

  • Voltage - Zener (Nom) (Vz): 2.7V
  • Tolerance: ±5%
  • Power - Max: 350mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 20µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
패키지: SOD-123
재고5,152
BZT52C36S RRG
Taiwan Semiconductor Corporation

DIODE, ZENER, 36V, 200MW, 5%, SO

  • Voltage - Zener (Nom) (Vz): 36V
  • Tolerance: ±5%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 45nA @ 25.2V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
패키지: SC-90, SOD-323F
재고7,104
BZX585B16 RSG
Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 200MW, 2%, SO

  • Voltage - Zener (Nom) (Vz): 16V
  • Tolerance: ±2%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 45nA @ 11.2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
패키지: SC-79, SOD-523
재고4,112
BZX85C11 R0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 1300MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 11V
  • Tolerance: ±5%
  • Power - Max: 1.3W
  • Impedance (Max) (Zzt): 8 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 8.2V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고7,664
BZV55C39 L0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 39V, 500MW, 5%, MM

  • Voltage - Zener (Nom) (Vz): 39V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 28V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
패키지: DO-213AC, MINI-MELF, SOD-80
재고6,400
GBU404HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고2,928
DBLS106G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 1A DBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
패키지: -
재고13,440
HS1MAL
Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A THIN SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: Thin SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고18,504
2M14ZH
Taiwan Semiconductor Corporation

DIODE ZENER 14V 2W DO204AC

  • Voltage - Zener (Nom) (Vz): 14 V
  • Tolerance: ±5%
  • Power - Max: 2 W
  • Impedance (Max) (Zzt): 5.5 Ohms
  • Current - Reverse Leakage @ Vr: 500 nA @ 10.6 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
패키지: -
Request a Quote
SDLW
Taiwan Semiconductor Corporation

0.8A, 200V, STANDARD RECOVERY RE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고60,000
UDZS7V5B
Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 7.5 V
  • Tolerance: ±2%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 900 nA @ 4 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
패키지: -
Request a Quote
SS26LW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 2A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고77,187
GBL206
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 2A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
재고3,600
SS32-R6
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: -
Request a Quote
TST20L120CW
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 120V 10A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 120 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
TSPB15U50S
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 15A SMPC4.0

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 mA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: SMPC4.0
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
S4B-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 4A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고3,756
TS2937CP50
Taiwan Semiconductor Corporation

0.5A 5V ULTRA LOW DROPOUT VOLTAG

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 26V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.7V @ 500mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 25 mA
  • PSRR: -
  • Control Features: Current Limit
  • Protection Features: Over Current, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
패키지: -
Request a Quote
SIMLRHG
Taiwan Semiconductor Corporation

GLASS PASSIVATED SMD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
UF1DLWH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A SOD123W

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고38,700
S5J-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 5A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
1SMA4759H
Taiwan Semiconductor Corporation

DIODE ZENER 62V 1.25W DO214AC

  • Voltage - Zener (Nom) (Vz): 62 V
  • Tolerance: ±5%
  • Power - Max: 1.25 W
  • Impedance (Max) (Zzt): 125 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 47.1 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
패키지: -
Request a Quote
HS1BL
Taiwan Semiconductor Corporation

50NS, 1A, 100V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
HS1GH
Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고45,000