Toshiba Semiconductor and Storage 제품 - 다이오드 - 정류기 - 어레이 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품 - 다이오드 - 정류기 - 어레이

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제조업체
설명
패키지
재고
수량
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
1SS184,LF
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SC59

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
패키지: TO-236-3, SC-59, SOT-23-3
재고59,850
Standard
80V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 80V
125°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
TBAV70,LM
Toshiba Semiconductor and Storage

DIODE HS SW 80V 215MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 215mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3 Flat Leads
  • Supplier Device Package: SOT-23-3
패키지: SOT-23-3 Flat Leads
재고51,252
Standard
80V
215mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface Mount
SOT-23-3 Flat Leads
SOT-23-3
TBAT54A,LM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1.5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고106,074
Schottky
30V
100mA
580mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
1.5ns
2µA @ 25V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot 1SS362FV,L3F
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA VESM

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
패키지: SOT-723
재고624,000
Standard
80V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 80V
150°C (Max)
Surface Mount
SOT-723
VESM
BAV70-LM
Toshiba Semiconductor and Storage

DIODE ARRAY GP 100V 215MA SOT23

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 215mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 80 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고9,420
Standard
100 V
215mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
200 nA @ 80 V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
HN1D01FU-LF-T
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA US6

  • Diode Configuration: 2 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
재고351
Standard
80 V
100mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
500 nA @ 80 V
125°C (Max)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
BAV99-LM
Toshiba Semiconductor and Storage

DIODE ARRAY GP 100V 215MA SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 215mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 80 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고16,389
Standard
100 V
215mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
3 ns
200 nA @ 80 V
150°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
HN4D01JU-TE85L-F
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA 5SSOP

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1.6 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: 5-SSOP
패키지: -
재고7,161
Standard
80 V
100mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
1.6 ns
500 nA @ 80 V
150°C (Max)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
5-SSOP
TRS12N65FB-S1Q
Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOTT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 650 V
  • Operating Temperature - Junction: 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고159
SiC (Silicon Carbide) Schottky
650 V
6A (DC)
1.6 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
30 µA @ 650 V
175°C
Through Hole
TO-247-3
TO-247
1SS360-T5L-F-T
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SSM

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: -
Request a Quote
Standard
80 V
100mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
500 nA @ 80 V
125°C (Max)
Surface Mount
SC-75, SOT-416
SSM
HN2S02FU-TE85L-F
Toshiba Semiconductor and Storage

DIODE ARR SCHOTT 40V 100MA US6

  • Diode Configuration: 3 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 40 V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
재고8,490
Schottky
40 V
100mA
600 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
5 µA @ 40 V
125°C (Max)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
TRS16N65FB-S1Q
Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOTT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Operating Temperature - Junction: 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고714
SiC (Silicon Carbide) Schottky
650 V
8A (DC)
1.6 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 650 V
175°C
Through Hole
TO-247-3
TO-247
1SS360-LJ-CT
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SSM

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: -
재고20,532
Standard
80 V
100mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
500 nA @ 80 V
125°C (Max)
Surface Mount
SC-75, SOT-416
SSM
CVJ10F30-LF
Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 30V 1A UFV

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 1A
  • Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (5 Leads), Flat Lead
  • Supplier Device Package: UFV
패키지: -
재고8,079
Schottky
30 V
1A
570 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 30 V
125°C (Max)
Surface Mount
6-SMD (5 Leads), Flat Lead
UFV
1SS226-LF
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SMINI

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고8,166
Standard
80 V
100mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
500 nA @ 80 V
125°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
1SS361FV-L3F
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA VESM

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
패키지: -
재고18,717
Standard
80 V
100mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
500 nA @ 80 V
150°C (Max)
Surface Mount
SOT-723
VESM
HN4D02JU-TE85L-F
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA USV

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1.6 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
패키지: -
Request a Quote
Standard
80 V
100mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
1.6 ns
500 nA @ 80 V
150°C (Max)
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
TRS20N65FB-S1Q
Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Operating Temperature - Junction: 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고78
SiC (Silicon Carbide) Schottky
650 V
10A (DC)
1.6 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
175°C
Through Hole
TO-247-3
TO-247
TRS20N65FB-S1F-S
Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
Request a Quote
SiC (Silicon Carbide) Schottky
650 V
10A (DC)
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
175°C (Max)
Through Hole
TO-247-3
TO-247
TRS12N65FB-S1F-S
Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOTT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
Request a Quote
SiC (Silicon Carbide) Schottky
650 V
6A (DC)
1.7 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
175°C (Max)
Through Hole
TO-247-3
TO-247
HN1D05FE-LF-B
Toshiba Semiconductor and Storage

400 V/0.1 A SWITCHING DIODE, SOT

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 400 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
패키지: -
Request a Quote
Standard
400 V
100mA
1.3 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
500 ns
100 nA @ 400 V
150°C
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
BAV99W-LF
Toshiba Semiconductor and Storage

DIODE ARRAY GP 100V 150MA USM

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 80 V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: -
재고17,970
Standard
100 V
150mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
200 nA @ 80 V
150°C (Max)
Surface Mount
SC-70, SOT-323
USM
HN2D01FU-TE85L-F
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 80MA US6

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 80mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
Request a Quote
Standard
80 V
80mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
500 nA @ 80 V
125°C (Max)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
1SS422-TE85L-F
Toshiba Semiconductor and Storage

DIODE ARR SCHOTT 30V 100MA SSM

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 30 V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: -
재고205,713
Schottky
30 V
100mA
500 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
50 µA @ 30 V
125°C (Max)
Surface Mount
SC-75, SOT-416
SSM
TRS24N65FB-S1Q
Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 650 V
  • Operating Temperature - Junction: 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고105
SiC (Silicon Carbide) Schottky
650 V
12A (DC)
1.6 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 650 V
175°C
Through Hole
TO-247-3
TO-247
TRS24N65FB-S1F-S
Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
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SiC (Silicon Carbide) Schottky
650 V
12A (DC)
1.7 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
175°C (Max)
Through Hole
TO-247-3
TO-247
TRS16N65FB-S1F-S
Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOTT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
Request a Quote
SiC (Silicon Carbide) Schottky
650 V
8A (DC)
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
175°C (Max)
Through Hole
TO-247-3
TO-247
HN2D02FU-LF
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 80MA US6

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 80mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
패키지: -
재고885
Standard
80 V
80mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
500 nA @ 80 V
125°C (Max)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6