이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
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Toshiba Semiconductor and Storage |
G3 SIC-SBD 650V 10A TO-220-2L
|
패키지: - |
재고876 |
|
650 V | 10A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 649pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA S-MINI
|
패키지: - |
재고3,996 |
|
80 V | 100mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 500 nA @ 80 V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A M-FLAT
|
패키지: - |
재고8,880 |
|
30 V | 2A | 450 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 82pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 3A M-FLAT
|
패키지: - |
Request a Quote |
|
400 V | 3A | 1.8 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 10 µA @ 400 V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A S-FLAT
|
패키지: - |
Request a Quote |
|
30 V | 3A | 520 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 30 V | 90pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
||
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 1A US2H
|
패키지: - |
재고62,391 |
|
60 V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 40 µA @ 60 V | 130pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | US2H | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A M-FLAT
|
패키지: - |
재고9,000 |
|
30 V | 2A | 480 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 90pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
||
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A M-FLAT
|
패키지: - |
재고8,928 |
|
30 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | 70pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 500MA S-FLAT
|
패키지: - |
재고6,372 |
|
200 V | 500mA | 950 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A CL2E
|
패키지: - |
재고321,807 |
|
40 V | 1A | 570 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25 µA @ 40 V | 130pF @ 0V, 1MHz | Surface Mount | 0402 (1006 Metric) | CL2E | 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A US-FLAT
|
패키지: - |
Request a Quote |
|
40 V | 1A | 490 mV @ 700 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 40 V | 35pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 1A M-FLAT
|
패키지: - |
Request a Quote |
|
600 V | 1A | 2 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 600 V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
||
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1A US-FLAT
|
패키지: - |
Request a Quote |
|
20 V | 1A | 450 mV @ 700 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 20 V | 40pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
100 V/0.25 A SWITCHING DIODE, SO
|
패키지: - |
재고8,979 |
|
100 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 3 ns | 200 nA @ 80 V | 0.5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | USC | 150°C |
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Toshiba Semiconductor and Storage |
DIODE SIL CARBIDE 650V 8A TO220F
|
패키지: - |
재고111 |
|
650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 28pF @ 650V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F-2L | 175°C (Max) |
||
Toshiba Semiconductor and Storage |
DIODE SIL CARB 650V 10A TO220-2L
|
패키지: - |
Request a Quote |
|
650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 36pF @ 650V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C (Max) |
||
Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 1A M-FLAT
|
패키지: - |
Request a Quote |
|
600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C |
||
Toshiba Semiconductor and Storage |
DIODE GEN PURP 40V 1A S-FLAT
|
패키지: - |
재고8,562 |
|
40 V | 1A | 490 mV @ 700 mA | Standard Recovery >500ns, > 200mA (Io) | - | 60 µA @ 40 V | 35pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
||
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A S-FLAT
|
패키지: - |
재고17,580 |
|
30 V | 1A | 360 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 82pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
||
Toshiba Semiconductor and Storage |
G3 SIC-SBD 650V 8A TO-220-2L
|
패키지: - |
재고1,107 |
|
650 V | 8A | 1.35 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 520pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C |
||
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A US-FLAT
|
패키지: - |
Request a Quote |
|
30 V | 1.5A | 460 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 30 V | 50pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | 150°C (Max) |
||
Toshiba Semiconductor and Storage |
DIODE GEN PURP 800V 500MA M-FLAT
|
패키지: - |
재고6 |
|
800 V | 500mA | 2.5 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 800 V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
||
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A M-FLAT
|
패키지: - |
Request a Quote |
|
30 V | 1A | 360 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 82pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
||
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A S-FLAT
|
패키지: - |
Request a Quote |
|
400 V | 1A | 1.1 V @ 700 mA | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 400 V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
||
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 2A US2H
|
패키지: - |
재고4,587 |
|
60 V | 2A | 590 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70 µA @ 60 V | 300pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | US2H | 150°C |
||
Toshiba Semiconductor and Storage |
DIODE GEN PURP 800V 500MA S-FLAT
|
패키지: - |
재고8,454 |
|
800 V | 500mA | 3 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 800 V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
||
Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 1A M-FLAT
|
패키지: - |
Request a Quote |
|
600 V | 1A | 2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 600 V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C |
||
Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 1A S-FLAT
|
패키지: - |
Request a Quote |
|
600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | 150°C |