Toshiba Semiconductor and Storage 제품 - 트랜지스터 - 양극(BJT) - RF | Heisener Electronics
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Toshiba Semiconductor and Storage 제품 - 트랜지스터 - 양극(BJT) - RF

기록 32
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이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SC5095-R(TE85L,F)
Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 13dB ~ 7.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
패키지: SC-70, SOT-323
재고7,776
10V
10GHz
1.8dB @ 2GHz
13dB ~ 7.5dB
100mW
50 @ 7mA, 6V
15mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
2SC4915-Y,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
  • Gain: 17dB ~ 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: SC-75, SOT-416
재고4,400
30V
550MHz
2.3dB ~ 5dB @ 100MHz
17dB ~ 23dB
100mW
100 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
hot 2SC5084-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA SMINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: TO-236-3, SC-59, SOT-23-3
재고95,628
12V
7GHz
1.1dB @ 1GHz
11dB
150mW
80 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
MT3S20P(TE12L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1GHZ PW-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
  • Gain: 16.5dB
  • Power - Max: 1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
패키지: TO-243AA
재고23,856
12V
7GHz
1.45dB @ 1GHz
16.5dB
1.8W
100 @ 50mA, 5V
80mA
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
2SC5086-Y,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 500MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: SC-75, SOT-416
재고5,008
12V
7GHz
1dB @ 500MHz
-
100mW
120 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
MT3S20TU(TE85L)
Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA UFM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.45dB @ 20mA, 5V
  • Gain: 12dB
  • Power - Max: 900mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: UFM
패키지: 3-SMD, Flat Leads
재고7,936
12V
7GHz
1.45dB @ 20mA, 5V
12dB
900mW
100 @ 50mA, 5V
80mA
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
UFM
2SC5087YTE85LF
Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA SMQ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-61AA
  • Supplier Device Package: SMQ
패키지: SC-61AA
재고6,112
12V
7GHz
1.1dB @ 1GHz
13dB
150mW
120 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-61AA
SMQ
hot 2SC4915-O,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
  • Gain: 17dB ~ 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: SC-75, SOT-416
재고72,000
30V
550MHz
2.3dB ~ 5dB @ 100MHz
17dB ~ 23dB
100mW
70 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
2SC5085-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 500MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고5,664
12V
7GHz
1dB @ 500MHz
-
100mW
80 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SC5087-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SMQ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-61AA
  • Supplier Device Package: SMQ
패키지: SC-61AA
재고28,542
12V
7GHz
1dB ~ 1.1dB @ 500MHz ~ 1GHz
-
150mW
80 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-61AA
SMQ
2SC5087R(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SMQ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-61AA
  • Supplier Device Package: SMQ
패키지: SC-61AA
재고28,182
12V
8GHz
1.1dB ~ 2dB @ 1GHz
-
150mW
120 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-61AA
SMQ
hot 2SC5085-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANSISTOR NPN MM USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11dB ~ 16.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고72,000
12V
7GHz
1.1dB @ 1GHz
11dB ~ 16.5dB
100mW
120 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SC5095-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 13dB ~ 7dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
패키지: SC-70, SOT-323
재고54,900
10V
10GHz
1.8dB @ 2GHz
13dB ~ 7dB
100mW
80 @ 7mA, 6V
15mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
2SC5065-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 12dB ~ 17dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고53,310
12V
7GHz
1.1dB @ 1GHz
12dB ~ 17dB
100mW
120 @ 10mA, 5V
30mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
hot 2SC4215-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
  • Gain: 17dB ~ 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고13,080
30V
550MHz
2dB ~ 5dB @ 100MHz
17dB ~ 23dB
100mW
100 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
hot MT3S16U(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 5V 1GHZ USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
  • Gain: 4.5dBi
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고144,000
5V
4GHz
2.4dB @ 1GHz
4.5dBi
100mW
80 @ 5mA, 1V
60mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
hot 2SC5065-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 500MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고180,000
12V
7GHz
1dB @ 500MHz
-
100mW
80 @ 10mA, 5V
30mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SC2714-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANSISTOR NPN S-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
  • Gain: 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: TO-236-3, SC-59, SOT-23-3
재고100,962
30V
550MHz
2.5dB @ 100MHz
23dB
100mW
100 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SC2714-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ S-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
  • Gain: 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: TO-236-3, SC-59, SOT-23-3
재고21,624
30V
550MHz
2.5dB @ 100MHz
23dB
100mW
70 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SC4215-O(TE85L,F)
Toshiba Semiconductor and Storage

RF TRANS NPN 30V 20MA SC70

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 5dB @ 100MHz
  • Gain: 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
패키지: SC-70, SOT-323
재고21,750
30V
550MHz
5dB @ 100MHz
23dB
100mW
40 @ 1mA, 6V
20mA
125°C (TJ)
Surface Mount
SC-70, SOT-323
USM
2SC5066-O,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 500MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: SC-75, SOT-416
재고22,500
12V
7GHz
1dB @ 500MHz
-
100mW
80 @ 10mA, 5V
30mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
MT3S113TU-LF
Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 11.2GHZ UFM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.3V
  • Frequency - Transition: 11.2GHz
  • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
  • Gain: 12.5dB
  • Power - Max: 900mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Lead
  • Supplier Device Package: UFM
패키지: -
재고7,506
5.3V
11.2GHz
1.45dB @ 1GHz
12.5dB
900mW
200 @ 30mA, 5V
100mA
150°C (TJ)
Surface Mount
3-SMD, Flat Lead
UFM
MT3S111P-TE12L-F
Toshiba Semiconductor and Storage

RF TRANS NPN 6V 8GHZ PW-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
  • Gain: 10.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
패키지: -
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6V
8GHz
1.25dB @ 1GHz
10.5dB
1W
200 @ 30mA, 5V
100mA
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
MT3S113P-TE12L-F
Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 7.7GHZ PW-MINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.3V
  • Frequency - Transition: 7.7GHz
  • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
  • Gain: 10.5dB
  • Power - Max: 1.6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
패키지: -
재고18
5.3V
7.7GHz
1.45dB @ 1GHz
10.5dB
1.6W
200 @ 30mA, 5V
100mA
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
MT3S113-TE85L-F
Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 12.5GHZ SMINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.3V
  • Frequency - Transition: 12.5GHz
  • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
  • Gain: 11.8dB
  • Power - Max: 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고8,601
5.3V
12.5GHz
1.45dB @ 1GHz
11.8dB
800mW
200 @ 30mA, 5V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
MT4S300U-TE85L-O-F
Toshiba Semiconductor and Storage

X34 PB-F RADIO-FREQUENCY SIGE HE

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4V
  • Frequency - Transition: 26.5GHz
  • Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
  • Gain: 16.9dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: USQ
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4V
26.5GHz
0.55dB @ 2GHz
16.9dB
250mW
200 @ 10mA, 3V
50mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
USQ
2SC5108-Y-LF
Toshiba Semiconductor and Storage

RF TRANS NPN 10V 6GHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
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10V
6GHz
-
11dB
100mW
120 @ 5mA, 5V
30mA
-
Surface Mount
SC-75, SOT-416
SSM
2SA1483-Y-TE12L-F
Toshiba Semiconductor and Storage

2SA1483-Y(TE12L,F)

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 200MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
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45V
200MHz
-
-
-
120 @ 10mA, 1V
200mA
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI