Toshiba Semiconductor and Storage 제품 - 트랜지스터 - 양극(BJT) - 단일 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품 - 트랜지스터 - 양극(BJT) - 단일

기록 441
페이지  1/16
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TTA008B-Q
Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR TO-126 PC=

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 1.5 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126N
패키지: -
재고69
2 A
80 V
500mV @ 100mA, 1A
100nA (ICBO)
100 @ 500mA, 2V
1.5 W
100MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126N
TTD1409B-S4X
Toshiba Semiconductor and Storage

TRANS NPN DARL 400V 20UA TO220

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 40mA, 4A
  • Current - Collector Cutoff (Max): 20µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2A, 2V
  • Power - Max: 2 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220SIS
패키지: -
재고126
6 A
400 V
2V @ 40mA, 4A
20µA (ICBO)
600 @ 2A, 2V
2 W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220SIS
2SC4116-GR-LXHF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SC70

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
패키지: -
재고17,790
150 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
100 mW
80MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
2SC5886A-T6L1-NQ
Toshiba Semiconductor and Storage

TRANS NPN 50V 5A PW-MOLD

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 32mA, 1.6A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
패키지: -
Request a Quote
5 A
50 V
220mV @ 32mA, 1.6A
100nA (ICBO)
400 @ 500mA, 2V
1 W
-
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PW-MOLD
TTD1509B-Q-S
Toshiba Semiconductor and Storage

TRANSISTOR NPN TO126N

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
TTC1949-Y-LF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.5A SMINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
Request a Quote
500 mA
50 V
400mV @ 50mA, 500mA
100nA (ICBO)
120 @ 100mA, 1V
200 mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SA1244-Y-T6L1-NQ
Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR; PW-MOLD;

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
  • Power - Max: 1 W
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
패키지: -
재고5,817
5 A
50 V
400mV @ 150mA, 3A
1µA (ICBO)
70 @ 1A, 1V
1 W
60MHz
150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PW-MOLD
2SA1162-GR-LXHF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고59,946
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
200 mW
80MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SC4117-GR-LF
Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A SC70

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
패키지: -
재고35,607
100 mA
120 V
300mV @ 1mA, 10mA
100nA (ICBO)
200 @ 2mA, 6V
100 mW
100MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
2SC2712-Y-LXHF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SMINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고21,147
150 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
200 mW
80MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
TTD1415B-S4X-S
Toshiba Semiconductor and Storage

TRANSISTOR NPN TO220SIS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
TPC6503-TE85L-F-M
Toshiba Semiconductor and Storage

TRANS NPN 30V 1.5A VS-6

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 150mA, 2V
  • Power - Max: 1.6 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: VS-6 (2.9x2.8)
패키지: -
Request a Quote
1.5 A
30 V
120mV @ 10mA, 500mA
100nA (ICBO)
400 @ 150mA, 2V
1.6 W
-
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
VS-6 (2.9x2.8)
2SC6142-Q
Toshiba Semiconductor and Storage

TRANS NPN 375V 1.5A PW-MOLD2

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1.5 A
  • Voltage - Collector Emitter Breakdown (Max): 375 V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA
  • Current - Collector Cutoff (Max): 50µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 1.1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Stub Leads, IPAK
  • Supplier Device Package: PW-MOLD2
패키지: -
Request a Quote
1.5 A
375 V
900mV @ 100mA, 800mA
50µA (ICBO)
100 @ 100mA, 5V
1.1 W
-
150°C (TJ)
Through Hole
TO-251-3 Stub Leads, IPAK
PW-MOLD2
2SC4116-BL-LXHF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SC70

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 100 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
패키지: -
재고17,892
150 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
350 @ 2mA, 6V
100 mW
80MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
TTC502-LF-B
Toshiba Semiconductor and Storage

TRANSISTOR FOR LF SMALL-SIGNAL A

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: 140mV @ 10mA, 300mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3 Flat Leads
  • Supplier Device Package: SOT-23F
패키지: -
Request a Quote
1 A
120 V
140mV @ 10mA, 300mA
100nA (ICBO)
120 @ 100mA, 2V
1 W
-
150°C (TJ)
Surface Mount
SOT-23-3 Flat Leads
SOT-23F
TTB1067B-Q-S
Toshiba Semiconductor and Storage

TRANSISTOR PNP BIPO TO126N

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC5712-TE12L-F
Toshiba Semiconductor and Storage

TRANS NPN 50V 3A PW-MINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
패키지: -
재고4,725
3 A
50 V
140mV @ 20mA, 1A
100nA (ICBO)
400 @ 300mA, 2V
1 W
-
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
TTA501-LF-B
Toshiba Semiconductor and Storage

TRANSISTOR FOR LOW FREQ AMP IC:

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3 Flat Leads
  • Supplier Device Package: SOT-23F
패키지: -
Request a Quote
2 A
50 V
200mV @ 33mA, 1A
100nA (ICBO)
200 @ 300mA, 2V
1 W
-
150°C (TJ)
Surface Mount
SOT-23-3 Flat Leads
SOT-23F
2SD1223-L1XGQ-O
Toshiba Semiconductor and Storage

TRANSISTOR NPN DARL PWMOLD

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SA1832-GR-LXHF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SSM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 120 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
패키지: -
Request a Quote
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
120 mW
80MHz
-
Surface Mount
SC-75, SOT-416
SSM
2SA1182-GR-LF
Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500 mA
  • Voltage - Collector Emitter Breakdown (Max): 30 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
  • Power - Max: 150 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고25,647
500 mA
30 V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 100mA, 1V
150 mW
200MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SC2712-GR-LXHF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SMINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고12,447
150 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
200 @ 2mA, 6V
200 mW
80MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SA1201-Y-TE12L-ZC
Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR PW-MINI PD

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800 mA
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 500 mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
패키지: -
재고2,322
800 mA
120 V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
500 mW
120MHz
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
2SA1586-Y-T5LND-F
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SC70

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
패키지: -
Request a Quote
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
100 mW
80MHz
125°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70
2SA1162-O-LXHF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고17,895
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
70 @ 2mA, 6V
200 mW
80MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
2SA2060-TE12L-F
Toshiba Semiconductor and Storage

TRANS PNP 50V 2A PW-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
  • Power - Max: 1 W
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
패키지: -
재고1,956
2 A
50 V
200mV @ 33mA, 1A
100nA (ICBO)
200 @ 300mA, 2V
1 W
-
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI
2SC6100-LF
Toshiba Semiconductor and Storage

TRANS NPN 50V 2.5A UFM

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2.5 A
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
  • Power - Max: 500 mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: UFM
패키지: -
재고127,053
2.5 A
50 V
140mV @ 20mA, 1A
100nA (ICBO)
400 @ 300mA, 2V
500 mW
-
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
UFM
2SC2712-BL-LXHF
Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SMINI

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
패키지: -
재고14,247
150 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
350 @ 2mA, 6V
200 mW
80MHz
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini