Toshiba Semiconductor and Storage 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SSM6P36TU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.33A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	패키지: -	재고11,769	Logic Level Gate, 1.5V Drive	20V	330mA (Ta)	1.31Ohm @ 100mA, 4.5V	1V @ 1mA	1.2nC @ 4V	43pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SSM6N7002BFU-T5L-F	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.2A US6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	Request a Quote	Logic Level Gate	60V	200mA	2.1Ohm @ 500mA, 10V	3.1V @ 250µA	-	17pF @ 25V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6N55NU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	패키지: -	재고1,455	Logic Level Gate	30V	4A	46mOhm @ 4A, 10V	2.5V @ 100µA	2.5nC @ 4.5V	280pF @ 15V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)
SSM6N813R-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 100V 3.5A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Power - Max: 1.5W (Ta) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	패키지: -	재고24,597	-	100V	3.5A (Ta)	112mOhm @ 3.5A, 10V	2.5V @ 100µA	3.6nC @ 4.5V	242pF @ 15V	1.5W (Ta)	175°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
SSM6P54TU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 1.2A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 228mOhm @ 600mA, 2.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	패키지: -	재고13,695	Logic Level Gate, 1.5V Drive	20V	1.2A (Ta)	228mOhm @ 600mA, 2.5V	1V @ 1mA	7.7nC @ 4V	331pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
TPC8228-H-LQ	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 3.8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 57mOhm @ 1.9A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	60V	3.8A	57mOhm @ 1.9A, 10V	2.3V @ 100µA	11nC @ 10V	640pF @ 10V	1.5W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SSM6P35AFU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.25A US6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V Power - Max: 285mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고17,970	Logic Level Gate, 1.2V Drive	20V	250mA (Ta)	1.4Ohm @ 150mA, 4.5V	1V @ 100µA	-	42pF @ 10V	285mW (Ta)	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6L807R-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 4A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	패키지: -	재고18,000	-	30V	4A (Ta)	39.1mOhm @ 2A, 4.5V	1V @ 1mA	3.2nC @ 4.5V, 6.74nC @ 4.5V	310pF @ 15V, 480pF @ 10V	1.4W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
SSM6N16FE-L3F	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.1A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고23,130	-	20V	100mA (Ta)	3Ohm @ 10mA, 4V	1.1V @ 100µA	-	9.3pF @ 3V	150mW (Ta)	150°C	Surface Mount	SOT-563, SOT-666	ES6
SSM6N37FE-LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.25A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고10,455	Logic Level Gate	20V	250mA	2.2Ohm @ 100mA, 4.5V	1V @ 1mA	-	12pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
SSM6N68NU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	패키지: -	재고3,981	Logic Level Gate, 1.8V Drive	30V	4A (Ta)	84mOhm @ 2A, 4.5V	1V @ 1mA	1.8nC @ 4.5V	129pF @ 15V	2W (Ta)	150°C	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)
SSM6P47NU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	패키지: -	재고8,649	Logic Level Gate	20V	4A	95mOhm @ 1.5A, 4.5V	1V @ 1mA	4.6nC @ 4.5V	290pF @ 10V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)
SSM6N40TU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 1.6A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	패키지: -	재고22,368	Logic Level Gate, 4V Drive	30V	1.6A (Ta)	122mOhm @ 1A, 10V	2.6V @ 1mA	5.1nC @ 10V	180pF @ 15V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SSM14N956L-EFF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 12V 20A TCSPED FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.57mA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.33W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 14-SMD, No Lead Supplier Device Package: TCSPED-302701	패키지: -	재고29,565	-	12V	20A (Ta)	1.35mOhm @ 10A, 4.5V	1.4V @ 1.57mA	76nC @ 4V	-	1.33W (Ta)	150°C	Surface Mount	14-SMD, No Lead	TCSPED-302701
SSM5N16FU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.1A USV FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	패키지: -	재고9,000	-	20V	100mA (Ta)	3Ohm @ 10mA, 4V	1.1V @ 100µA	-	9.3pF @ 3V	200mW (Ta)	150°C	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
SSM6N48FU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A US6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	패키지: -	재고8,250	-	30V	100mA (Ta)	3.2Ohm @ 10mA, 4V	1.5V @ 100µA	-	15.1pF @ 3V	300mW	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6P40TU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 1.4A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	패키지: -	재고26,037	Logic Level Gate, 4V Drive	30V	1.4A (Ta)	226mOhm @ 1A, 10V	2V @ 1mA	2.9nC @ 10V	120pF @ 15V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SSM6L820R-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V/20V 4A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	패키지: -	재고17,625	-	30V, 20V	4A (Ta)	39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V	1V @ 1mA, 1.2V @ 1mA	3.2nC @ 4.5V, 6.7nC @ 4.5V	310pF @ 15V, 480pF @ 10V	1.4W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
SSM6L820R-LXHF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V/20V 4A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	패키지: -	재고44,349	-	30V, 20V	4A (Ta)	39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V	1V @ 1mA, 1.2V @ 1mA	3.2nC @ 4.5V, 6.7nC @4.5V	310pF @ 15V, 480pF @ 10V	1.4W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
TPC8227-H-LQ	Toshiba Semiconductor and Storage	MOSFET 2N-CH 40V 5.1A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	-	40V	5.1A	33mOhm @ 2.6A, 10V	2.3V @ 100µA	10nC @ 10V	640pF @ 10V	1.5W (Ta)	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SSM6N24TU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.5A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	패키지: -	재고7,695	-	30V	500mA (Ta)	145mOhm @ 500mA, 4.5V	1.1V @ 100µA	-	245pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SSM6N357R-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.65A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	패키지: -	재고20,688	-	60V	650mA (Ta)	1.8Ohm @ 150mA, 5V	2V @ 1mA	1.5nC @ 5V	60pF @ 12V	1.5W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
TPCP8407-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 40V 5A/4A PS-8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta) Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V Power - Max: 690mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8	패키지: -	재고9,984	-	40V	5A (Ta), 4A (Ta)	36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V	3V @ 1mA	11.8nC @ 10V, 18nC @ 10V	505pF @ 10V, 810pF @ 10V	690mW (Ta)	150°C	Surface Mount	8-SMD, Flat Lead	PS-8
SSM6P816R-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 6A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	패키지: -	재고12,447	Logic Level Gate, 1.8V Drive	20V	6A (Ta)	30.1mOhm @ 4A, 4.5V	1V @ 1mA	16.6nC @ 4.5V	1030pF @ 10V	1.4W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
SSM6N813R-LXHF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 100V 3.5A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Power - Max: 1.5W (Ta) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	패키지: -	재고15,822	Logic Level Gate, 4.5V Drive	100V	3.5A (Ta)	112mOhm @ 3.5A, 10V	2.5V @ 100µA	3.6nC @ 4.5V	242pF @ 15V	1.5W (Ta)	175°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
SSM6L14FE-TE85L-F	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.8A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	패키지: -	재고52,236	Logic Level Gate, 1.5V Drive	20V	800mA (Ta), 720mA (Ta)	240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V	1V @ 1mA	2nC @ 4.5V, 1.76nC @ 4.5V	90pF @ 10V, 110pF @ 10V	150mW (Ta)	150°C	Surface Mount	SOT-563, SOT-666	ES6
TPC8207-TE12L	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 6A 8-SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V Power - Max: 750mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	패키지: -	Request a Quote	Logic Level Gate	20V	6A	20mOhm @ 4.8A, 4V	1.2V @ 200µA	22nC @ 5V	2010pF @ 10V	750mW	-	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP (5.5x6.0)
SSM6N67NU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	패키지: -	재고31,257	Logic Level Gate, 1.8V Drive	30V	4A (Ta)	39.1mOhm @ 2A, 4.5V	1V @ 1mA	3.2nC @ 4.5V	310pF @ 15V	2W (Ta)	150°C	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)

SSM6P36TU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Power - Max: 500mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

패키지: -

재고11,769

Logic Level Gate, 1.5V Drive

20V

330mA (Ta)

1.31Ohm @ 100mA, 4.5V

1V @ 1mA

1.2nC @ 4V

43pF @ 10V

500mW (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

UF6

SSM6N7002BFU-T5L-F

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

Request a Quote

Logic Level Gate

60V

200mA

2.1Ohm @ 500mA, 10V

3.1V @ 250µA

-

17pF @ 25V

300mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

SSM6N55NU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-µDFN (2x2)

패키지: -

재고1,455

Logic Level Gate

30V

4A

46mOhm @ 4A, 10V

2.5V @ 100µA

2.5nC @ 4.5V

280pF @ 15V

1W

150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-µDFN (2x2)

SSM6N813R-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Power - Max: 1.5W (Ta)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

패키지: -

재고24,597

-

100V

3.5A (Ta)

112mOhm @ 3.5A, 10V

2.5V @ 100µA

3.6nC @ 4.5V

242pF @ 15V

1.5W (Ta)

175°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

SSM6P54TU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 1.2A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 228mOhm @ 600mA, 2.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 10V
Power - Max: 500mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

패키지: -

재고13,695

Logic Level Gate, 1.5V Drive

20V

1.2A (Ta)

228mOhm @ 600mA, 2.5V

1V @ 1mA

7.7nC @ 4V

331pF @ 10V

500mW (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

UF6

TPC8228-H-LQ

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 3.8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 57mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Power - Max: 1.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

-

60V

3.8A

57mOhm @ 1.9A, 10V

2.3V @ 100µA

11nC @ 10V

640pF @ 10V

1.5W (Ta)

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SSM6P35AFU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
Power - Max: 285mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고17,970

Logic Level Gate, 1.2V Drive

20V

250mA (Ta)

1.4Ohm @ 150mA, 4.5V

1V @ 100µA

-

42pF @ 10V

285mW (Ta)

150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

SSM6L807R-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 4A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

패키지: -

재고18,000

-

30V

4A (Ta)

39.1mOhm @ 2A, 4.5V

1V @ 1mA

3.2nC @ 4.5V, 6.74nC @ 4.5V

310pF @ 15V, 480pF @ 10V

1.4W (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

SSM6N16FE-L3F

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A ES6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Power - Max: 150mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고23,130

-

20V

100mA (Ta)

3Ohm @ 10mA, 4V

1.1V @ 100µA

-

9.3pF @ 3V

150mW (Ta)

150°C

Surface Mount

SOT-563, SOT-666

ES6

SSM6N37FE-LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A ES6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고10,455

Logic Level Gate

20V

250mA

2.2Ohm @ 100mA, 4.5V

1V @ 1mA

-

12pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

SSM6N68NU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-µDFN (2x2)

패키지: -

재고3,981

Logic Level Gate, 1.8V Drive

30V

4A (Ta)

84mOhm @ 2A, 4.5V

1V @ 1mA

1.8nC @ 4.5V

129pF @ 15V

2W (Ta)

150°C

Surface Mount

6-WDFN Exposed Pad

6-µDFN (2x2)

SSM6P47NU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-µDFN (2x2)

패키지: -

재고8,649

Logic Level Gate

20V

4A

95mOhm @ 1.5A, 4.5V

1V @ 1mA

4.6nC @ 4.5V

290pF @ 10V

1W

150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-µDFN (2x2)

SSM6N40TU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 1.6A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

패키지: -

재고22,368

Logic Level Gate, 4V Drive

30V

1.6A (Ta)

122mOhm @ 1A, 10V

2.6V @ 1mA

5.1nC @ 10V

180pF @ 15V

500mW (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

UF6

SSM14N956L-EFF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 12V 20A TCSPED

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.33W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 14-SMD, No Lead
Supplier Device Package: TCSPED-302701

패키지: -

재고29,565

-

12V

20A (Ta)

1.35mOhm @ 10A, 4.5V

1.4V @ 1.57mA

76nC @ 4V

-

1.33W (Ta)

150°C

Surface Mount

14-SMD, No Lead

TCSPED-302701

SSM5N16FU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A USV

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Power - Max: 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

패키지: -

재고9,000

-

20V

100mA (Ta)

3Ohm @ 10mA, 4V

1.1V @ 100µA

-

9.3pF @ 3V

200mW (Ta)

150°C

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

SSM6N48FU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V
Power - Max: 300mW
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

패키지: -

재고8,250

-

30V

100mA (Ta)

3.2Ohm @ 10mA, 4V

1.5V @ 100µA

-

15.1pF @ 3V

300mW

150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

SSM6P40TU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 1.4A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

패키지: -

재고26,037

Logic Level Gate, 4V Drive

30V

1.4A (Ta)

226mOhm @ 1A, 10V

2V @ 1mA

2.9nC @ 10V

120pF @ 15V

500mW (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

UF6

SSM6L820R-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

패키지: -

재고17,625

-

30V, 20V

4A (Ta)

39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V

1V @ 1mA, 1.2V @ 1mA

3.2nC @ 4.5V, 6.7nC @ 4.5V

310pF @ 15V, 480pF @ 10V

1.4W (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

SSM6L820R-LXHF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

패키지: -

재고44,349

-

30V, 20V

4A (Ta)

39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V

1V @ 1mA, 1.2V @ 1mA

3.2nC @ 4.5V, 6.7nC @4.5V

310pF @ 15V, 480pF @ 10V

1.4W (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

TPC8227-H-LQ

Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 5.1A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Power - Max: 1.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

-

40V

5.1A

33mOhm @ 2.6A, 10V

2.3V @ 100µA

10nC @ 10V

640pF @ 10V

1.5W (Ta)

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SSM6N24TU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.5A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Power - Max: 500mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

패키지: -

재고7,695

-

30V

500mA (Ta)

145mOhm @ 500mA, 4.5V

1.1V @ 100µA

-

245pF @ 10V

500mW (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

UF6

SSM6N357R-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.65A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V
Power - Max: 1.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

패키지: -

재고20,688

-

60V

650mA (Ta)

1.8Ohm @ 150mA, 5V

2V @ 1mA

1.5nC @ 5V

60pF @ 12V

1.5W (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

TPCP8407-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 5A/4A PS-8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
Power - Max: 690mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8

패키지: -

재고9,984

-

40V

5A (Ta), 4A (Ta)

36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V

3V @ 1mA

11.8nC @ 10V, 18nC @ 10V

505pF @ 10V, 810pF @ 10V

690mW (Ta)

150°C

Surface Mount

8-SMD, Flat Lead

PS-8

SSM6P816R-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 6A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

패키지: -

재고12,447

Logic Level Gate, 1.8V Drive

20V

6A (Ta)

30.1mOhm @ 4A, 4.5V

1V @ 1mA

16.6nC @ 4.5V

1030pF @ 10V

1.4W (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

SSM6N813R-LXHF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Power - Max: 1.5W (Ta)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

패키지: -

재고15,822

Logic Level Gate, 4.5V Drive

100V

3.5A (Ta)

112mOhm @ 3.5A, 10V

2.5V @ 100µA

3.6nC @ 4.5V

242pF @ 15V

1.5W (Ta)

175°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

SSM6L14FE-TE85L-F

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A ES6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Power - Max: 150mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

패키지: -

재고52,236

Logic Level Gate, 1.5V Drive

20V

800mA (Ta), 720mA (Ta)

240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V

1V @ 1mA

2nC @ 4.5V, 1.76nC @ 4.5V

90pF @ 10V, 110pF @ 10V

150mW (Ta)

150°C

Surface Mount

SOT-563, SOT-666

ES6

TPC8207-TE12L

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
Power - Max: 750mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)

패키지: -

Request a Quote

Logic Level Gate

20V

6A

20mOhm @ 4.8A, 4V

1.2V @ 200µA

22nC @ 5V

2010pF @ 10V

750mW

-

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP (5.5x6.0)

SSM6N67NU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-µDFN (2x2)

패키지: -

재고31,257

Logic Level Gate, 1.8V Drive

30V

4A (Ta)

39.1mOhm @ 2A, 4.5V

1V @ 1mA

3.2nC @ 4.5V

310pF @ 15V

2W (Ta)

150°C

Surface Mount

6-WDFN Exposed Pad

6-µDFN (2x2)