Toshiba Semiconductor and Storage 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품 - 트랜지스터 - FET, MOSFET - 단일

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설명
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재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TJ50S06M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 50A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고9,879
MOSFET (Metal Oxide)
60 V
50A (Ta)
6V, 10V
3V @ 1mA
124 nC @ 10 V
6290 pF @ 10 V
+10V, -20V
-
90W (Tc)
13.8mOhm @ 25A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK1K0A60F-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 770µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 3.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고108
MOSFET (Metal Oxide)
600 V
7.5A (Ta)
10V
4V @ 770µA
24 nC @ 10 V
890 pF @ 300 V
±30V
-
40W (Tc)
1Ohm @ 3.8A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TPW2900ENH-L1Q
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 142W (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerWDFN
패키지: -
재고14,940
MOSFET (Metal Oxide)
200 V
33A (Tc)
10V
4V @ 1mA
22 nC @ 10 V
2200 pF @ 100 V
±20V
-
800mW (Ta), 142W (Tc)
29mOhm @ 16.5A, 10V
150°C
Surface Mount
8-DSOP Advance
8-PowerWDFN
TPCP8107-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 8A PS-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PS-8
  • Package / Case: 8-SMD, Flat Lead
패키지: -
재고11,598
MOSFET (Metal Oxide)
40 V
8A (Ta)
6V, 10V
3V @ 1mA
44.6 nC @ 10 V
2160 pF @ 10 V
+10V, -20V
-
1W (Ta)
18mOhm @ 4A, 10V
175°C
Surface Mount
PS-8
8-SMD, Flat Lead
TPHR7904PB-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 150A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: -
재고46,050
MOSFET (Metal Oxide)
40 V
150A (Ta)
6V, 10V
3V @ 1mA
85 nC @ 10 V
6650 pF @ 10 V
±20V
-
960mW (Ta), 170W (Tc)
0.79mOhm @ 75A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TW070J120B-S1Q
Toshiba Semiconductor and Storage

SICFET N-CH 1200V 36A TO3P

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 5.8V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V
  • Vgs (Max): ±25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 272W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
패키지: -
재고189
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
20V
5.8V @ 20mA
67 nC @ 20 V
1680 pF @ 800 V
±25V, -10V
-
272W (Tc)
90mOhm @ 18A, 20V
-55°C ~ 175°C
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
SSM3K121TU
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3.5A SC70

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 2A, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
패키지: -
Request a Quote
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.5V, 4V
1V @ 1mA
5.9 nC @ 4 V
400 pF @ 10 V
±10V
-
500mW (Ta)
48mOhm @ 2A, 4V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
SSM3K127TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 123mOhm @ 1A, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
패키지: -
재고5,142
MOSFET (Metal Oxide)
30 V
2A (Ta)
1.8V, 4V
1V @ 1mA
1.5 nC @ 4 V
123 pF @ 15 V
±12V
-
500mW (Ta)
123mOhm @ 1A, 4V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
SSM6J214FE-TE85L-F
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 3.6A ES6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: ES6
  • Package / Case: SOT-563, SOT-666
패키지: -
재고58,932
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
1.8V, 10V
1.2V @ 1mA
7.9 nC @ 4.5 V
560 pF @ 15 V
±12V
-
500mW (Ta)
50mOhm @ 3A, 10V
150°C
Surface Mount
ES6
SOT-563, SOT-666
TK28N65W5-S1F
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 13.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
재고174
MOSFET (Metal Oxide)
650 V
27.6A (Ta)
10V
4.5V @ 1.6mA
90 nC @ 10 V
3000 pF @ 300 V
±30V
-
230W (Tc)
130mOhm @ 13.8A, 10V
150°C
Through Hole
TO-247
TO-247-3
TW045N120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 45MO

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 6.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 182W (Tc)
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
재고183
SiCFET (Silicon Carbide)
1200 V
40A (Tc)
18V
5V @ 6.7mA
57 nC @ 18 V
1969 pF @ 800 V
+25V, -10V
-
182W (Tc)
59mOhm @ 20A, 18V
175°C
Through Hole
TO-247
TO-247-3
TK4P60D-RQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DP(

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고2,790
MOSFET (Metal Oxide)
600 V
4A (Ta)
10V
4.4V @ 1mA
12 nC @ 10 V
600 pF @ 25 V
±30V
-
100W (Tc)
1.7Ohm @ 2A, 10V
150°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TPCA8047-H-T2L1-VM
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 32A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 16A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
32A (Ta)
4.5V, 10V
2.3V @ 500µA
43 nC @ 10 V
3365 pF @ 10 V
±20V
-
1.6W (Ta), 45W (Tc)
7.3mOhm @ 16A, 10V
150°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TPH1R204PL1-LQ
Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
패키지: -
재고65,853
MOSFET (Metal Oxide)
40 V
150A (Tc)
4.5V, 10V
2.4V @ 500µA
74 nC @ 10 V
7200 pF @ 20 V
±20V
-
960mW (Ta), 170W (Tc)
1.24mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
TK28V65W-LQ
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 13.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
패키지: -
재고14,898
MOSFET (Metal Oxide)
650 V
27.6A (Ta)
10V
3.5V @ 1.6mA
75 nC @ 10 V
3000 pF @ 300 V
±30V
-
240W (Tc)
120mOhm @ 13.8A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
SSM3J352F-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A S-MINI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 2A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고23,100
MOSFET (Metal Oxide)
20 V
2A (Ta)
1.8V, 10V
1.2V @ 1mA
5.1 nC @ 4.5 V
210 pF @ 10 V
±12V
-
1.2W (Ta)
110mOhm @ 2A, 10V
150°C
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
XPN12006NC-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 20A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
  • Package / Case: 8-PowerVDFN
패키지: -
재고29,856
MOSFET (Metal Oxide)
60 V
20A
4.5V, 10V
2.5V @ 200µA
23 nC @ 10 V
1100 pF @ 10 V
±20V
-
65W (Tc)
12mOhm @ 10A, 10V
-55°C ~ 175°C
Surface Mount
8-TSON Advance-WF (3.1x3.1)
8-PowerVDFN
TK55S10N1-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 55A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 157W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고29,772
MOSFET (Metal Oxide)
100 V
55A (Ta)
10V
4V @ 500µA
49 nC @ 10 V
3280 pF @ 10 V
±20V
-
157W (Tc)
6.5mOhm @ 27.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
SSM3K16CT-L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 100MA CST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3
  • Package / Case: SC-101, SOT-883
패키지: -
재고106,068
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.5V, 4V
1.1V @ 100µA
-
9.3 pF @ 3 V
±10V
-
100mW (Ta)
3Ohm @ 10mA, 4V
150°C
Surface Mount
CST3
SC-101, SOT-883
TK33S10N1L-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고4,491
MOSFET (Metal Oxide)
100 V
33A (Ta)
4.5V, 10V
2.5V @ 500µA
33 nC @ 10 V
2250 pF @ 10 V
±20V
-
125W (Tc)
9.7mOhm @ 16.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH1500CNH1-LQ
Toshiba Semiconductor and Storage

150V U-MOS VIII-H SOP-ADVANCE(N)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
패키지: -
Request a Quote
MOSFET (Metal Oxide)
150 V
74A (Ta), 38A (Tc)
10V
4V @ 1mA
-
2200 pF @ 75 V
±20V
-
2.5W (Ta), 170W (Tc)
15.4mOhm @ 19A, 10V
150°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
TW107N65C-S1F
Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 107MO

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 76W (Tc)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
재고240
SiCFET (Silicon Carbide)
650 V
20A (Tc)
18V
5V @ 1.2mA
21 nC @ 18 V
600 pF @ 400 V
+25V, -10V
-
76W (Tc)
145mOhm @ 10A, 18V
175°C
Through Hole
TO-247
TO-247-3
TK25S06N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고10,815
MOSFET (Metal Oxide)
60 V
25A (Ta)
4.5V, 10V
2.5V @ 100µA
15 nC @ 10 V
855 pF @ 10 V
±20V
-
57W (Tc)
36.8mOhm @ 12.5A, 4.5V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK040Z65Z-S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 57A TO247-4L

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.85mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(T)
  • Package / Case: TO-247-4
패키지: -
재고66
MOSFET (Metal Oxide)
650 V
57A (Ta)
10V
4V @ 2.85mA
105 nC @ 10 V
6250 pF @ 300 V
±30V
-
360W (Tc)
40mOhm @ 28.5A, 10V
150°C
Through Hole
TO-247-4L(T)
TO-247-4
TPCC8105-L1Q
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TSO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
  • Vgs (Max): +20V, -25V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-VDFN Exposed Pad
패키지: -
재고11,400
MOSFET (Metal Oxide)
30 V
23A (Ta)
4.5V, 10V
2V @ 500µA
76 nC @ 10 V
3240 pF @ 10 V
+20V, -25V
-
700mW (Ta), 30W (Tc)
7.8mOhm @ 11.5A, 10V
150°C
Surface Mount
8-TSON Advance (3.3x3.3)
8-VDFN Exposed Pad
TW030Z120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247-4L 3

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 13mA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 249W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
패키지: -
재고330
SiC (Silicon Carbide Junction Transistor)
1200 V
60A (Tc)
18V
5V @ 13mA
82 nC @ 18 V
2925 pF @ 800 V
+25V, -10V
-
249W (Tc)
41mOhm @ 30A, 18V
175°C
Through Hole
TO-247-4L(X)
TO-247-4
SSM3J371R-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
패키지: -
재고34,488
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
1V @ 1mA
10.4 nC @ 4.5 V
630 pF @ 10 V
+6V, -8V
-
1W (Ta)
55mOhm @ 3A, 4.5V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3J09FU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 200MA USM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.7Ohm @ 100mA, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USM
  • Package / Case: SC-70, SOT-323
패키지: -
재고6,321
MOSFET (Metal Oxide)
30 V
200mA (Ta)
3.3V, 10V
1.8V @ 100µA
-
22 pF @ 5 V
±20V
-
150mW (Ta)
2.7Ohm @ 100mA, 10V
150°C
Surface Mount
USM
SC-70, SOT-323