Toshiba Semiconductor and Storage 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품 - 트랜지스터 - IGBT - 단일

기록 19
페이지  1/1
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
GT50J121(Q)
Toshiba Semiconductor and Storage

IGBT 600V 50A 240W TO3P LH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
  • Power - Max: 240W
  • Switching Energy: 1.3mJ (on), 1.34mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 90ns/300ns
  • Test Condition: 300V, 50A, 13 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(LH)
패키지: TO-3PL
재고4,736
600V
50A
100A
2.45V @ 15V, 50A
240W
1.3mJ (on), 1.34mJ (off)
Standard
-
90ns/300ns
300V, 50A, 13 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3PL
TO-3P(LH)
GT8G133(TE12L,Q)
Toshiba Semiconductor and Storage

IGBT 400V 600MW 8TSSOP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
  • Power - Max: 600mW
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 1.7µs/2µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고2,100
400V
-
150A
2.9V @ 4V, 150A
600mW
-
Standard
-
1.7µs/2µs
-
-
150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot GT60N321(Q)
Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
  • Power - Max: 170W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 330ns/700ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 2.5µs
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(LH)
패키지: TO-3PL
재고22,140
1000V
60A
120A
2.8V @ 15V, 60A
170W
-
Standard
-
330ns/700ns
-
2.5µs
150°C (TJ)
Through Hole
TO-3PL
TO-3P(LH)
GT10J312(Q)
Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 60W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 400ns/400ns
  • Test Condition: 300V, 10A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-220SM
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,992
600V
10A
20A
2.7V @ 15V, 10A
60W
-
Standard
-
400ns/400ns
300V, 10A, 100 Ohm, 15V
200ns
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-220SM
GT10G131(TE12L,Q)
Toshiba Semiconductor and Storage

IGBT 400V 1W 8-SOIC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
  • Power - Max: 1W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 3.1µs/2µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
패키지: 8-SOIC (0.173", 4.40mm Width)
재고2,432
400V
-
200A
2.3V @ 4V, 200A
1W
-
Standard
-
3.1µs/2µs
-
-
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
GT20N135SRA-S1E
Toshiba Semiconductor and Storage

IGBT 1350V 40A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 312 W
  • Switching Energy: -, 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 185 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 300V, 40A, 39Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고30
1350 V
40 A
80 A
2.4V @ 15V, 40A
312 W
-, 700µJ (off)
Standard
185 nC
-
300V, 40A, 39Ohm, 15V
-
175°C (TJ)
Through Hole
TO-247-3
TO-247
GT50JR21-STA1-E-S
Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN(OS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 230 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고42
600 V
50 A
100 A
2V @ 15V, 50A
230 W
-
Standard
-
-
-
-
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
GT15J341-S4X
Toshiba Semiconductor and Storage

IGBT 600V 15A TO220SIS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 30 W
  • Switching Energy: 300µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 60ns/170ns
  • Test Condition: 300V, 15A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 80 ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220SIS
패키지: -
재고60
600 V
15 A
60 A
2V @ 15V, 15A
30 W
300µJ (on), 300µJ (off)
Standard
-
60ns/170ns
300V, 15A, 33Ohm, 15V
80 ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220SIS
GT30J121-Q
Toshiba Semiconductor and Storage

IGBT 600V 30A 170W TO3PN

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
  • Power - Max: 170 W
  • Switching Energy: 1mJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 90ns/300ns
  • Test Condition: 300V, 30A, 24Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고171
600 V
30 A
60 A
2.45V @ 15V, 30A
170 W
1mJ (on), 800µJ (off)
Standard
-
90ns/300ns
300V, 30A, 24Ohm, 15V
-
-
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
GT30N135SRA-S1E
Toshiba Semiconductor and Storage

IGBT 1350V 60A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
  • Power - Max: 348 W
  • Switching Energy: -, 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 270 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 300V, 60A, 39Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
재고3
1350 V
60 A
120 A
2.6V @ 15V, 60A
348 W
-, 1.3mJ (off)
Standard
270 nC
-
300V, 60A, 39Ohm, 15V
-
175°C (TJ)
Through Hole
TO-247-3
TO-247
GT50JR22-STA1-E-S
Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN(OS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 230 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고39
600 V
50 A
100 A
2.2V @ 15V, 50A
230 W
-
Standard
-
-
-
-
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
GT40RR21-STA1-E
Toshiba Semiconductor and Storage

IGBT 1200V 40A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
  • Power - Max: 230 W
  • Switching Energy: -, 540µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: 280V, 40A, 10Ohm, 20V
  • Reverse Recovery Time (trr): 600 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고63
1200 V
40 A
200 A
2.8V @ 15V, 40A
230 W
-, 540µJ (off)
Standard
-
-
280V, 40A, 10Ohm, 20V
600 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
GT30J341-Q
Toshiba Semiconductor and Storage

IGBT 600V 59A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 59 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 230 W
  • Switching Energy: 800µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 80ns/280ns
  • Test Condition: 300V, 30A, 24Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고21
600 V
59 A
120 A
2V @ 15V, 30A
230 W
800µJ (on), 600µJ (off)
Standard
-
80ns/280ns
300V, 30A, 24Ohm, 15V
50 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
GT40QR21-STA1-E-D
Toshiba Semiconductor and Storage

IGBT 1200V 40A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 230 W
  • Switching Energy: -, 290µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: 280V, 40A, 10Ohm, 20V
  • Reverse Recovery Time (trr): 600 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고228
1200 V
40 A
80 A
2.7V @ 15V, 40A
230 W
-, 290µJ (off)
Standard
-
-
280V, 40A, 10Ohm, 20V
600 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
GT50J341-Q
Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN IC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 200 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고288
600 V
50 A
100 A
2.2V @ 15V, 50A
200 W
-
Standard
-
-
-
-
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
GT40WR21-Q
Toshiba Semiconductor and Storage

IGBT 1350V 40A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 5.9V @ 15V, 40A
  • Power - Max: 375 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고126
1350 V
40 A
80 A
5.9V @ 15V, 40A
375 W
-
Standard
-
-
-
-
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
GT50N322A
Toshiba Semiconductor and Storage

IGBT 1000V 50A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
  • Power - Max: 156 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 800 ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고306
1000 V
50 A
120 A
2.8V @ 15V, 60A
156 W
-
Standard
-
-
-
800 ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
GT30J65MRB-S1E
Toshiba Semiconductor and Storage

650V SILICON N-CHANNEL IGBT, TO-

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 200 W
  • Switching Energy: 1.4mJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 75ns/400ns
  • Test Condition: 400V, 15A, 56Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
패키지: -
재고237
650 V
60 A
-
1.8V @ 15V, 30A
200 W
1.4mJ (on), 220µJ (off)
Standard
70 nC
75ns/400ns
400V, 15A, 56Ohm, 15V
200 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
GT20J341-S4X-S
Toshiba Semiconductor and Storage

DISCRETE IGBT TRANSISTOR TO-220S

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 45 W
  • Switching Energy: 500µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 60ns/240ns
  • Test Condition: 300V, 20A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 90 ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220SIS
패키지: -
재고84
600 V
20 A
80 A
2V @ 15V, 20A
45 W
500µJ (on), 400µJ (off)
Standard
-
60ns/240ns
300V, 20A, 33Ohm, 15V
90 ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220SIS