Toshiba Semiconductor and Storage 제품 - 메모리 | Heisener Electronics
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Toshiba Semiconductor and Storage 제품 - 메모리

기록 59
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부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot TH58BVG2S3HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고5,232
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot TH58NVG2S3HTA00
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고12,672
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
TH58BYG2S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 67FBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
패키지: 67-VFBGA
재고6,384
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TC58BVG2S0HBAI4
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 63FBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-TFBGA (9x11)
패키지: 63-VFBGA
재고4,480
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
hot TC58NVG2S0HTA00
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고39,720
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot TC58BVG2S0HTA00
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고12,864
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot TC58NVG1S3HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고16,932
EEPROM
EEPROM - NAND
2Gb (256M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot TC58NVG1S3HBAI4
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 63FBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-TFBGA (9x11)
패키지: 63-VFBGA
재고9,756
EEPROM
EEPROM - NAND
2Gb (256M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
TC58BVG1S3HTA00
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고5,584
EEPROM
EEPROM - NAND
2Gb (256M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
TC58CYG0S3HQAIE
Toshiba Semiconductor and Storage

1GB SERIAL NAND 24NM SOP16 1.8V

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 155µs
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP
패키지: 16-SOIC (0.295", 7.50mm Width)
재고5,168
FLASH
FLASH - NAND
1Gb (128M x 8)
SPI
104MHz
-
155µs
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOP
TC58BVG0S3HBAI4
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 63FBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-TFBGA (9x11)
패키지: 63-VFBGA
재고4,048
EEPROM
EEPROM - NAND
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
TC58BVG0S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 67VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
패키지: 67-VFBGA
재고7,520
EEPROM
EEPROM - NAND
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
hot TC58BVG0S3HTA00
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고15,396
EEPROM
EEPROM - NAND
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot TC58NVG0S3HTA00
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고540,672
EEPROM
EEPROM - NAND
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot TC58BYG0S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 67VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
패키지: 67-VFBGA
재고49,404
EEPROM
EEPROM - NAND
1Gb (128M x 8)
Parallel
-
25ns
25ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TH58NVG5S0FTA20
Toshiba Semiconductor and Storage

IC EEPROM 32GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고8,292
EEPROM
EEPROM - NAND
32Gb (4G x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot TC58NVG3S0FTA00
Toshiba Semiconductor and Storage

IC FLASH 8GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고16,956
FLASH
FLASH - NAND
8Gb (1G x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot TC58NVG2S0FTA00
Toshiba Semiconductor and Storage

IC FLASH 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고7,072
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
TH58NVG2S3HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고3,792
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot TH58BVG2S3HTA00
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고6,720
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
TC58BVG2S0HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고6,448
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
TC58BYG2S0HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 67VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
패키지: 67-VFBGA
재고6,976
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TC58NVG2S0HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 67FBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
패키지: 67-VFBGA
재고6,168
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
hot TC58NVG1S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 67VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
패키지: 67-VFBGA
재고3,872
EEPROM
EEPROM - NAND
2Gb (256M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TC58NYG1S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 67FBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
패키지: 67-VFBGA
재고9,420
EEPROM
EEPROM - NAND
2Gb (256M x 8)
Parallel
-
25ns
25ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TC58BYG1S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 67VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
패키지: 67-VFBGA
재고13,776
EEPROM
EEPROM - NAND
2Gb (256M x 8)
Parallel
-
25ns
25ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
hot TC58NVG0S3HBAI4
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 63TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-TFBGA (9x11)
패키지: 63-VFBGA
재고7,168
EEPROM
EEPROM - NAND
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
hot TC58BVG0S3HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고5,200
EEPROM
EEPROM - NAND
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I