페이지 21 - Vishay Semiconductor Diodes Division 제품 - 다이오드 - 브리지 정류기

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BU1006-E3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 600V 10A BU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 3.2A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU Supplier Device Package: isoCINK+? BU	패키지: 4-SIP, BU	재고4,896	Standard	600V	3.2A	1.05V @ 5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+? BU
GBU8J-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 8A 600V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고7,808	Standard	600V	8A	1V @ 8A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8G-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 8A 400V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고6,256	Standard	400V	8A	1V @ 8A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8D-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 8A 200V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고3,408	Standard	200V	8A	1V @ 8A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8B-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 8A 100V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고2,400	Standard	100V	8A	1V @ 8A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6M-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 1000V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고7,408	Standard	1000V	6A	1V @ 6A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6K-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 800V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고6,384	Standard	800V	6A	1V @ 6A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6J-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 600V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고3,536	Standard	600V	6A	1V @ 6A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6G-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 400V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고2,080	Standard	400V	6A	1V @ 6A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6D-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 200V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고2,096	Standard	200V	6A	1V @ 3A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6B-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 6A 100V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고6,736	Standard	100V	6A	1V @ 6A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU8A-M3/51	Vishay Semiconductor Diodes Division	DIODE 8A 50V INLINE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고7,888	Standard	50V	3.9A	1V @ 8A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU6A-M3/51	Vishay Semiconductor Diodes Division	DIODE 6A 50V INLINE 4SIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 3.8A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고3,968	Standard	50V	3.8A	1V @ 6A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4M-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 1000V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고5,808	Standard	1000V	4A	1V @ 4A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4K-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 800V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고3,520	Standard	800V	4A	1V @ 4A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4J-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 600V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고5,264	Standard	600V	4A	1V @ 4A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4G-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 400V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고2,928	Standard	400V	4A	1V @ 4A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4D-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 200V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고3,280	Standard	200V	4A	1V @ 4A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4B-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 100V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고6,896	Standard	100V	4A	1V @ 4A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4M-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 1000V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고2,032	Standard	1000V	4A	1V @ 4A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4K-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 800V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고5,216	Standard	800V	4A	1V @ 4A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4J-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 600V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고2,960	Standard	600V	4A	1V @ 4A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4G-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 400V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고5,744	Standard	400V	4A	1V @ 4A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4D-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 200V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고7,616	Standard	200V	4A	1V @ 4A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4B-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 4A 100V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고2,100	Standard	100V	4A	1V @ 4A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4A-M3/51	Vishay Semiconductor Diodes Division	DIODE 1PH 4A 50V Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고4,864	Standard	50V	3A	1V @ 4A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBU4A-M3/45	Vishay Semiconductor Diodes Division	DIODE 1PH 4A 50V Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고7,040	Standard	50V	3A	1V @ 4A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
3N252-E4/51	Vishay Semiconductor Diodes Division	BRIDGE RECT 1.5A 1000V KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	패키지: 4-SIP, KBPM	재고4,768	Standard	1000V	1.5A	1V @ 1A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBPM	KBPM

BU1006-E3/51

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 10A BU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 3.2A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Supplier Device Package: isoCINK+? BU

패키지: 4-SIP, BU

재고4,896

Standard

600V

3.2A

1.05V @ 5A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU

isoCINK+? BU

GBU8J-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 8A 600V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고7,808

Standard

600V

8A

1V @ 8A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU8G-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 8A 400V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고6,256

Standard

400V

8A

1V @ 8A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU8D-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 8A 200V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고3,408

Standard

200V

8A

1V @ 8A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU8B-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 8A 100V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고2,400

Standard

100V

8A

1V @ 8A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU6M-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 1000V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고7,408

Standard

1000V

6A

1V @ 6A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU6K-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 800V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고6,384

Standard

800V

6A

1V @ 6A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU6J-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 600V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고3,536

Standard

600V

6A

1V @ 6A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU6G-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 400V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고2,080

Standard

400V

6A

1V @ 6A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU6D-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 200V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고2,096

Standard

200V

6A

1V @ 3A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU6B-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 100V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고6,736

Standard

100V

6A

1V @ 6A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU8A-M3/51

Vishay Semiconductor Diodes Division

DIODE 8A 50V INLINE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고7,888

Standard

50V

3.9A

1V @ 8A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU6A-M3/51

Vishay Semiconductor Diodes Division

DIODE 6A 50V INLINE 4SIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 3.8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고3,968

Standard

50V

3.8A

1V @ 6A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4M-M3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 1000V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고5,808

Standard

1000V

4A

1V @ 4A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4K-M3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 800V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고3,520

Standard

800V

4A

1V @ 4A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4J-M3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 600V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고5,264

Standard

600V

4A

1V @ 4A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4G-M3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 400V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고2,928

Standard

400V

4A

1V @ 4A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4D-M3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 200V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고3,280

Standard

200V

4A

1V @ 4A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4B-M3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 100V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고6,896

Standard

100V

4A

1V @ 4A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4M-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 1000V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고2,032

Standard

1000V

4A

1V @ 4A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4K-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 800V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고5,216

Standard

800V

4A

1V @ 4A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4J-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 600V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고2,960

Standard

600V

4A

1V @ 4A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4G-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 400V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고5,744

Standard

400V

4A

1V @ 4A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4D-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 200V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고7,616

Standard

200V

4A

1V @ 4A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4B-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 4A 100V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고2,100

Standard

100V

4A

1V @ 4A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4A-M3/51

Vishay Semiconductor Diodes Division

DIODE 1PH 4A 50V

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고4,864

Standard

50V

3A

1V @ 4A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBU4A-M3/45

Vishay Semiconductor Diodes Division

DIODE 1PH 4A 50V

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고7,040

Standard

50V

3A

1V @ 4A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

3N252-E4/51

Vishay Semiconductor Diodes Division

BRIDGE RECT 1.5A 1000V KBPM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

재고4,768

Standard

1000V

1.5A

1V @ 1A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBPM

KBPM