페이지 17 - Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일

기록 10,373
페이지  17/371
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
VS-ETL1506-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 210ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고23,832
600V
15A
1.07V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
210ns
15µA @ 600V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
VIT5202-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 200V 5A TO262AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고25,908
200V
5A
880mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 200V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
-40°C ~ 175°C
VS-15EWH06FN-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 36ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고20,874
600V
15A
2.1V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
36ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
VIT1080S-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 10A TO262AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고21,618
80V
10A
810mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
600µA @ 80V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
-55°C ~ 150°C
hot VS-ETL0806-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180ns
  • Current - Reverse Leakage @ Vr: 9µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고248,160
600V
8A
1.07V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
9µA @ 600V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
VS-8EWL06FN-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 170ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고27,438
600V
8A
1.05V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
170ns
5µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
FES8BT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-220-2
재고18,576
100V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
hot VS-5EWL06FN-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 145ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고36,000
600V
5A
1.2V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
145ns
5µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
SE20DBHM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3.9A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant
재고17,466
100V
3.9A
1.2V @ 20A
Standard Recovery >500ns, > 200mA (Io)
3µs
25µA @ 100V
150pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-55°C ~ 175°C
V40DL45BP-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 40A TO263AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 660mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant
재고18,246
45V
40A
660mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 45V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-40°C ~ 150°C
SE20DJ-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3.9A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant
재고22,218
600V
3.9A
1.2V @ 20A
Standard Recovery >500ns, > 200mA (Io)
3µs
25µA @ 600V
150pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-55°C ~ 175°C
SE12DJHM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3.2A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: 90pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant
재고19,428
600V
3.2A
1.15V @ 12A
Standard Recovery >500ns, > 200mA (Io)
3µs
20µA @ 600V
90pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-55°C ~ 175°C
BYW86-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: SOD-64, Axial
재고38,910
1000V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
7.5µs
1µA @ 1000V
60pF @ 4V, 1MHz
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
SE12DBHM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3.2A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 20µA @ 100V
  • Capacitance @ Vr, F: 90pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant
재고16,458
100V
3.2A
1.15V @ 12A
Standard Recovery >500ns, > 200mA (Io)
3µs
20µA @ 100V
90pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-55°C ~ 175°C
1N5627-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 800V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: SOD-64, Axial
재고24,222
800V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
7.5µs
1µA @ 800V
60pF @ 4V, 1MHz
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
SE12DJ-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3.2A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: 90pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant
재고18,864
600V
3.2A
1.15V @ 12A
Standard Recovery >500ns, > 200mA (Io)
3µs
20µA @ 600V
90pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-55°C ~ 175°C
SE10DBHM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3000ns
  • Current - Reverse Leakage @ Vr: 15µA @ 100V
  • Capacitance @ Vr, F: 67pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant
재고34,230
100V
3A (DC)
1.15V @ 10A
Standard Recovery >500ns, > 200mA (Io)
3000ns
15µA @ 100V
67pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-55°C ~ 175°C
SE10DB-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 15µA @ 100V
  • Capacitance @ Vr, F: 67pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant
재고18,684
100V
3A
1.15V @ 10A
Standard Recovery >500ns, > 200mA (Io)
3µs
15µA @ 100V
67pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-55°C ~ 175°C
SE10DJ-M3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: 67pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant
재고34,410
600V
3A
1.15V @ 10A
Standard Recovery >500ns, > 200mA (Io)
3µs
15µA @ 600V
67pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-55°C ~ 175°C
AU2PJ-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고15,708
600V
1.6A (DC)
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PD-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고23,550
200V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 200V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
hot SS29-E3/52T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1.5A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AA, SMB
재고133,200
90V
1.5A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
30µA @ 90V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
hot UF5400-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-201AD, Axial
재고3,904
50V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
45pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
hot AS1PG-M3/84A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A DO220

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-220AA
재고348,000
400V
1.5A (DC)
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 400V
10.4pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
hot ES2C-E3/52T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: 18pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AA, SMB
재고369,000
150V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 150V
18pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
MURS160-M3/52T
Vishay Semiconductor Diodes Division

DIODE RECT 1A 600V 50NS DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AA, SMB
재고28,710
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 175°C
GI504-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9.4A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 28pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -50°C ~ 150°C
패키지: DO-201AD, Axial
재고26,598
400V
3A
1.1V @ 9.4A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 400V
28pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
hot GF1K-E3/67A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO214BA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214BA
  • Supplier Device Package: DO-214BA (GF1)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214BA
재고312,000
800V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 800V
15pF @ 4V, 1MHz
Surface Mount
DO-214BA
DO-214BA (GF1)
-65°C ~ 175°C