페이지 297 - Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일

기록 10,373
페이지  297/371
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SB020-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 600MA MPG06

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 600mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: MPG06, Axial
재고6,896
20V
600mA
550mV @ 600mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
MPG06, Axial
MPG06
-65°C ~ 125°C
RMPG06JHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: MPG06, Axial
재고3,776
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
6.6pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
RMPG06GHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: MPG06, Axial
재고5,424
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
6.6pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
RMPG06DHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: MPG06, Axial
재고6,480
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
6.6pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
RGP5100HE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -
패키지: Axial
재고4,848
1000V
500mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
Axial
Axial
-
RGP5100-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -
패키지: Axial
재고7,808
1000V
500mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
Axial
Axial
-
RGP5020HE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -
패키지: Axial
재고2,112
200V
500mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
Axial
Axial
-
RGP5020-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -
패키지: Axial
재고3,248
200V
500mA
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
Axial
Axial
-
RGP30MHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AD, Axial
재고3,872
1000V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP30KHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AD, Axial
재고6,336
800V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP30JHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AD, Axial
재고7,520
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP30GHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AD, Axial
재고4,928
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP30DHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AD, Axial
재고3,472
200V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP30BHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AD, Axial
재고3,072
100V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
RGP20JHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고6,224
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20J-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고5,760
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20GHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고5,440
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20G-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고3,328
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20DHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고3,968
200V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20D-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고6,160
200V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20BHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고7,968
100V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20B-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고3,296
100V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP20AHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고3,712
50V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
hot RGP20A-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 2A GP20

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: GP20
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고720,000
50V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
-
Through Hole
DO-201AA, DO-27, Axial
GP20
-65°C ~ 175°C
RGP15MHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1.5A DO204

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AC, DO-15, Axial
재고2,784
1000V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 175°C
RGP15KHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1.5A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AC, DO-15, Axial
재고4,816
800V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 175°C
RGP15JHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AC, DO-15, Axial
재고3,024
600V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 175°C
RGP15GHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AC, DO-15, Axial
재고4,208
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 175°C