페이지 33 - Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일

기록 10,373
페이지  33/371
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
VS-ETU0805FP-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 8A TO220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 9µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220-2 Full Pack
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2 Full Pack
재고20,160
500V
8A
1.25V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
9µA @ 500V
-
Through Hole
TO-220-2 Full Pack
TO-220-2 Full Pack
-65°C ~ 175°C
VS-ETU0805-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 9µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고22,584
500V
8A
1.25V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
9µA @ 500V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
hot VS-ETU3006-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고4,096
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
30µA @ 600V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
hot UG12JT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 12A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
패키지: TO-220-2
재고4,880
600V
12A
1.75V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
30µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
VS-HFA04SD60S-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 4A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고20,256
600V
4A
1.8V @ 4A
-
-
3µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-55°C ~ 150°C
VS-8ETU04SPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 43ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고9,084
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
43ns
10µA @ 400V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 175°C
hot V30120SG-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 30A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-220-3
재고7,440
120V
30A
1.28V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 120V
-
Through Hole
TO-220-3
TO-220AB
-40°C ~ 150°C
VI30100S-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 30A TO262AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고18,192
100V
30A
910mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
-40°C ~ 150°C
VS-MBR1645PBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-220-2
재고10,548
45V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 45V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
VS-ETH1506S-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.45V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 29ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고13,344
600V
15A
2.45V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
29ns
15µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 175°C
hot MBRB1645-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,808
45V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 45V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
VS-ETX1506-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 3.4V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 36µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고6,032
600V
15A
3.4V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
36µA @ 600V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
VS-ETU1506-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고7,456
600V
15A
1.9V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
15µA @ 600V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
VS-ETH1506-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.45V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 29ns
  • Current - Reverse Leakage @ Vr: 15µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고12,936
600V
15A
2.45V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
29ns
15µA @ 600V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
UH10FT-E3/4W
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 10A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고8,100
300V
10A
1.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
VS-ETL0806FP-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180ns
  • Current - Reverse Leakage @ Vr: 9µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고14,370
600V
8A
1.07V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
9µA @ 600V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
VS-6EWL06FN-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 154ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고18,312
600V
6A
1.25V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
154ns
5µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
VS-SD3000C10K
Vishay Semiconductor Diodes Division

DIODE MODULE 1KV 3800A DO200AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3800A
  • Voltage - Forward (Vf) (Max) @ If: 1.22V @ 6000A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: DO-200AC, K-PUK
  • Operating Temperature - Junction: -
패키지: DO-200AC, K-PUK
재고6,976
1000V
3800A
1.22V @ 6000A
Standard Recovery >500ns, > 200mA (Io)
-
75mA @ 1000V
-
Clamp On
DO-200AC, K-PUK
DO-200AC, K-PUK
-
VS-400UR160D
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 400A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 400A
  • Voltage - Forward (Vf) (Max) @ If: 1.62V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 200°C
패키지: DO-205AB, DO-9, Stud
재고4,832
1600V
400A
1.62V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 1600V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-40°C ~ 200°C
VS-400UR120D
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 400A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 400A
  • Voltage - Forward (Vf) (Max) @ If: 1.62V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 200°C
패키지: DO-205AB, DO-9, Stud
재고6,288
1200V
400A
1.62V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 1200V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-40°C ~ 200°C
VS-300UR40A
Vishay Semiconductor Diodes Division

DIODE GEN REV 400V 300A DO205AB

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 942A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 200°C
패키지: DO-205AB, DO-9, Stud
재고6,036
400V
300A
1.4V @ 942A
Standard Recovery >500ns, > 200mA (Io)
-
40mA @ 400V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 200°C
VS-240U120D
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 320A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 320A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 750A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 180°C
패키지: DO-205AB, DO-9, Stud
재고4,368
1200V
320A
1.33V @ 750A
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 1200V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-40°C ~ 180°C
VS-300U30A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 300A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 942A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40mA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 200°C
패키지: DO-205AB, DO-9, Stud
재고7,648
300V
300A
1.4V @ 942A
Standard Recovery >500ns, > 200mA (Io)
-
40mA @ 300V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 200°C
VS-150KR60A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 150A DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35mA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
패키지: DO-205AA, DO-8, Stud
재고5,776
600V
150A
1.33V @ 471A
Standard Recovery >500ns, > 200mA (Io)
-
35mA @ 600V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 200°C
VS-150KR40A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 150A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
패키지: DO-205AA, DO-8, Stud
재고6,444
400V
150A
1.33V @ 471A
Standard Recovery >500ns, > 200mA (Io)
-
35mA @ 400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 200°C
VS-150K30A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 150A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35mA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
패키지: DO-205AA, DO-8, Stud
재고4,880
300V
150A
1.33V @ 471A
Standard Recovery >500ns, > 200mA (Io)
-
35mA @ 300V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 200°C
VS-70HFL80S05
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 70A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 219.8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 100µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: DO-203AB, DO-5, Stud
재고6,324
800V
70A
1.85V @ 219.8A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
100µA @ 800V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
VS-70HFL60S02
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 70A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 219.8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: DO-203AB, DO-5, Stud
재고6,384
600V
70A
1.85V @ 219.8A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
100µA @ 600V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C