페이지 336 - Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일

기록 10,373
페이지  336/371
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
AR3PGHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.8A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 44pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고2,864
400V
1.8A (DC)
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
10µA @ 400V
44pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AR3PGHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.8A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 44pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고2,800
400V
1.8A (DC)
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
10µA @ 400V
44pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AR3PDHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.8A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 44pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고7,808
200V
1.8A (DC)
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
10µA @ 200V
44pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AR3PDHM3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.8A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 44pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-277, 3-PowerDFN
재고6,352
200V
1.8A (DC)
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
10µA @ 200V
44pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
VS-80EPS08PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 80A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고2,100
800V
80A
1.17V @ 80A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 800V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-80EPF12PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 80A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 480ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고7,632
1200V
80A
1.35V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
480ns
100µA @ 1200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-80EPF06PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 80A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 190ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고7,472
600V
80A
1.25V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
190ns
100µA @ 600V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-60CPF12PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 480ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고3,136
1200V
60A
1.4V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
480ns
100µA @ 1200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-30CPF04PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 30A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고6,304
400V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 400V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-60CPF02PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고6,912
200V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-30CPF10PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 30A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 450ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고2,624
1000V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
450ns
100µA @ 1000V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-80EPF10PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 80A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 480ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고5,344
1000V
80A
1.35V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
480ns
100µA @ 1000V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-80EPF04PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 80A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 190ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고6,560
400V
80A
1.25V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
190ns
100µA @ 400V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-80EPF02PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 80A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 190ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고6,880
200V
80A
1.25V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
190ns
100µA @ 200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-60CPF10PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 480ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고6,512
1000V
60A
1.4V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
480ns
100µA @ 1000V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-60CPF06PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고6,416
600V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 600V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-60CPF04PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고7,792
400V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 400V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-30CPF12PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 30A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고2,048
1200V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 1200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-30CPF06PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고6,672
600V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 600V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-30CPF02PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 30A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 160ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고3,056
200V
30A
1.41V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
100µA @ 200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-80EPS12PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 80A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.17V @ 80A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-247-3
재고5,872
1200V
80A
1.17V @ 80A
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 1200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
VS-50SQ100TR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 5A DO204AR

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: DO-204AR
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: DO-204AR, Axial
재고2,784
100V
5A
660mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
550µA @ 100V
-
Through Hole
DO-204AR, Axial
DO-204AR
-55°C ~ 175°C
SBLF10L30HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 10A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-220-2 Full Pack, Isolated Tab
재고3,920
30V
10A
520mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-65°C ~ 150°C
SBLF10L30-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 10A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-220-2 Full Pack, Isolated Tab
재고4,256
30V
10A
520mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-65°C ~ 150°C
SBLF1040HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 10A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: TO-220-3 Full Pack, Isolated Tab
재고6,960
40V
10A
600mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-40°C ~ 125°C
SBLF1040-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 10A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: TO-220-3 Full Pack, Isolated Tab
재고3,264
40V
10A
600mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-40°C ~ 125°C
SBLF1030HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 10A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: TO-220-3 Full Pack, Isolated Tab
재고7,520
30V
10A
600mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-40°C ~ 125°C
SBLF1030-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 10A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -40°C ~ 125°C
패키지: TO-220-3 Full Pack, Isolated Tab
재고2,080
30V
10A
600mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-40°C ~ 125°C