페이지 41 - Vishay Semiconductor Diodes Division 제품 - 다이오드 - 정류기 - 단일

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MSS1P6-M3/89A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1A MICROSMP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: MicroSMP Supplier Device Package: MicroSMP Operating Temperature - Junction: -55°C ~ 150°C	패키지: MicroSMP	재고320,280	60V	1A	680mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	40pF @ 4V, 1MHz	Surface Mount	MicroSMP	MicroSMP	-55°C ~ 150°C
MSS1P4-M3/89A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A MICROSMP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: MicroSMP Supplier Device Package: MicroSMP Operating Temperature - Junction: -55°C ~ 150°C	패키지: MicroSMP	재고3,820,344	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	50pF @ 4V, 1MHz	Surface Mount	MicroSMP	MicroSMP	-55°C ~ 150°C
S1PM-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고228,000	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 1000V	6pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
MSE1PB-M3/89A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A MICROSMP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: MicroSMP Supplier Device Package: MicroSMP Operating Temperature - Junction: -55°C ~ 175°C	패키지: MicroSMP	재고231,012	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 100V	5pF @ 4V, 1MHz	Surface Mount	MicroSMP	MicroSMP	-55°C ~ 175°C
VS-20ETS08STRLPBF	Vishay Semiconductor Diodes Division	DIODE INPUT 20A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,312	800V	20A	1.1V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 800V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
VS-6TQ045STRLPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 6A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 45V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,240	45V	6A	600mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 45V	400pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
VS-10ETS08STRLPBF	Vishay Semiconductor Diodes Division	DIODE RECT 800V 10A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고2,560	800V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	500µA @ 800V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
VS-8TQ080STRLPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 80V 8A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 80V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,712	80V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 80V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
VS-MURB1520TRLPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 15A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,080	200V	15A	1.05V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	22ns	10µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
VS-8ETU04STRLPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO262 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,792	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
SE12DGHM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3.2A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3.2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고7,792	400V	3.2A	1.15V @ 12A	Standard Recovery >500ns, > 200mA (Io)	3µs	20µA @ 400V	90pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
VB20150S-E3/8W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 150V 20A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,768	150V	20A	1.43V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 150V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
MBRB1660-E3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,672	60V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
MBRB1645-E3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고2,832	45V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
SB15H45-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 7A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 7A Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 45V Capacitance @ Vr, F: 1020pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: 200°C (Max)	패키지: DO-204AL, DO-41, Axial	재고2,128	45V	7A	480mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	1020pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	200°C (Max)
SE20DDHM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3.9A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고3,920	200V	3.9A	1.2V @ 20A	Standard Recovery >500ns, > 200mA (Io)	3µs	25µA @ 200V	150pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
SE20DGHM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3.9A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 25µA @ 400V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고7,280	400V	3.9A	1.2V @ 20A	Standard Recovery >500ns, > 200mA (Io)	3µs	25µA @ 400V	150pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
V35PW45HM3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 35A SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 620mV @ 35A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.5mA @ 45V Capacitance @ Vr, F: 4230pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,232	45V	35A	620mV @ 35A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.5mA @ 45V	4230pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 150°C
SE20DG-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3.9A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 25µA @ 400V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고5,552	400V	3.9A	1.2V @ 20A	Standard Recovery >500ns, > 200mA (Io)	3µs	25µA @ 400V	150pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
SE20DD-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3.9A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고7,056	200V	3.9A	1.2V @ 20A	Standard Recovery >500ns, > 200mA (Io)	3µs	25µA @ 200V	150pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
SE20DB-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3.9A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 25µA @ 200V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고6,576	200V	3.9A	1.2V @ 20A	Standard Recovery >500ns, > 200mA (Io)	3µs	25µA @ 200V	150pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
VS-HFA04SD60STRPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 4A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,248	600V	4A	1.8V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	3µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-55°C ~ 150°C
MBRB760-E3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 7.5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고28,800	60V	7.5A	750mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
NSB8MT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고7,596	1000V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	55pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
EGP50D-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 5A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 95pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AA, DO-27, Axial	재고6,560	200V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	95pF @ 4V, 1MHz	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
SE12DDHM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3.2A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3.2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 20µA @ 200V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고5,408	200V	3.2A	1.15V @ 12A	Standard Recovery >500ns, > 200mA (Io)	3µs	20µA @ 200V	90pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
SS12P2L-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 560mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 930pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-277, 3-PowerDFN	재고2,821,200	20V	12A	560mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	930pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
SE12DB-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 3.2A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3.2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 20µA @ 100V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant	재고7,584	100V	3.2A	1.15V @ 12A	Standard Recovery >500ns, > 200mA (Io)	3µs	20µA @ 100V	90pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C

MSS1P6-M3/89A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A MICROSMP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 60V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: MicroSMP
Supplier Device Package: MicroSMP
Operating Temperature - Junction: -55°C ~ 150°C

패키지: MicroSMP

재고320,280

60V

1A

680mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 60V

40pF @ 4V, 1MHz

Surface Mount

MicroSMP

-55°C ~ 150°C

MSS1P4-M3/89A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A MICROSMP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: MicroSMP
Supplier Device Package: MicroSMP
Operating Temperature - Junction: -55°C ~ 150°C

패키지: MicroSMP

재고3,820,344

40V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

50pF @ 4V, 1MHz

Surface Mount

MicroSMP

-55°C ~ 150°C

S1PM-M3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고228,000

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 1000V

6pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

MSE1PB-M3/89A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A MICROSMP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: MicroSMP
Supplier Device Package: MicroSMP
Operating Temperature - Junction: -55°C ~ 175°C

패키지: MicroSMP

재고231,012

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

780ns

1µA @ 100V

5pF @ 4V, 1MHz

Surface Mount

MicroSMP

-55°C ~ 175°C

VS-20ETS08STRLPBF

Vishay Semiconductor Diodes Division

DIODE INPUT 20A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,312

800V

20A

1.1V @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 800V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-40°C ~ 150°C

VS-6TQ045STRLPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 6A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800µA @ 45V
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,240

45V

6A

600mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

-

800µA @ 45V

400pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

VS-10ETS08STRLPBF

Vishay Semiconductor Diodes Division

DIODE RECT 800V 10A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고2,560

800V

10A

1.1V @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

500µA @ 800V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-40°C ~ 150°C

VS-8TQ080STRLPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 8A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550µA @ 80V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,712

80V

8A

720mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

550µA @ 80V

500pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

VS-MURB1520TRLPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 15A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,080

200V

15A

1.05V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

22ns

10µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 175°C

VS-8ETU04STRLPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO262

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,792

400V

8A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 400V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 175°C

SE12DGHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3.2A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3.2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 20µA @ 400V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고7,792

400V

3.2A

1.15V @ 12A

Standard Recovery >500ns, > 200mA (Io)

3µs

20µA @ 400V

90pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

VB20150S-E3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 20A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,768

150V

20A

1.43V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 150V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

MBRB1660-E3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,672

60V

16A

750mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

MBRB1645-E3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고2,832

45V

16A

630mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

SB15H45-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 7A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 45V
Capacitance @ Vr, F: 1020pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: 200°C (Max)

패키지: DO-204AL, DO-41, Axial

재고2,128

45V

7A

480mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 45V

1020pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

200°C (Max)

SE20DDHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3.9A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고3,920

200V

3.9A

1.2V @ 20A

Standard Recovery >500ns, > 200mA (Io)

3µs

25µA @ 200V

150pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

SE20DGHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3.9A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 25µA @ 400V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고7,280

400V

3.9A

1.2V @ 20A

Standard Recovery >500ns, > 200mA (Io)

3µs

25µA @ 400V

150pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

V35PW45HM3/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 35A SLIMDPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 620mV @ 35A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.5mA @ 45V
Capacitance @ Vr, F: 4230pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,232

45V

35A

620mV @ 35A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.5mA @ 45V

4230pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

SlimDPAK

-40°C ~ 150°C

SE20DG-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3.9A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 25µA @ 400V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고5,552

400V

3.9A

1.2V @ 20A

Standard Recovery >500ns, > 200mA (Io)

3µs

25µA @ 400V

150pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

SE20DD-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3.9A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고7,056

200V

3.9A

1.2V @ 20A

Standard Recovery >500ns, > 200mA (Io)

3µs

25µA @ 200V

150pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

SE20DB-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3.9A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고6,576

200V

3.9A

1.2V @ 20A

Standard Recovery >500ns, > 200mA (Io)

3µs

25µA @ 200V

150pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

VS-HFA04SD60STRPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 4A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42ns
Current - Reverse Leakage @ Vr: 3µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,248

600V

4A

1.8V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

42ns

3µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-55°C ~ 150°C

MBRB760-E3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 7.5A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고28,800

60V

7.5A

750mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

NSB8MT-E3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고7,596

1000V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

55pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

EGP50D-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 5A GP20

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AA, DO-27, Axial

재고6,560

200V

5A

950mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

95pF @ 4V, 1MHz

Through Hole

DO-201AA, DO-27, Axial

GP20

-65°C ~ 150°C

SE12DDHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3.2A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3.2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 20µA @ 200V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고5,408

200V

3.2A

1.15V @ 12A

Standard Recovery >500ns, > 200mA (Io)

3µs

20µA @ 200V

90pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

SS12P2L-M3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 930pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

재고2,821,200

20V

12A

560mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

930pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

SE12DB-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3.2A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3.2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 20µA @ 100V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant

재고7,584

100V

3.2A

1.15V @ 12A

Standard Recovery >500ns, > 200mA (Io)

3µs

20µA @ 100V

90pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C