페이지 30 - Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 4,844
페이지  30/173
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재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SIHP15N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 13A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고300
MOSFET (Metal Oxide)
800 V
13A (Tc)
10V
4V @ 250µA
53 nC @ 10 V
1093 pF @ 100 V
±30V
-
156W (Tc)
350mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIJA74DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 24A/81.2A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고468
MOSFET (Metal Oxide)
40 V
24A (Ta), 81.2A (Tc)
-
2.4V @ 250µA
41 nC @ 10 V
2000 pF @ 20 V
+20V, -16V
-
4.1W (Ta), 46.2W (Tc)
3.99mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIR120DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 80V 24.7A/106A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고43,413
MOSFET (Metal Oxide)
80 V
24.7A (Ta), 106A (Tc)
7.5V, 10V
3.5V @ 250µA
94 nC @ 10 V
4150 pF @ 40 V
±20V
-
5.4W (Ta), 100W (Tc)
3.55mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SUD19N20-90-BE3
Vishay Siliconix

MOSFET N-CH 200V 19A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
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MOSFET (Metal Oxide)
200 V
19A (Tc)
6V, 10V
4V @ 250µA
51 nC @ 10 V
1800 pF @ 25 V
±20V
-
3W (Ta), 136W (Tc)
90mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SQ3419CEV-T1_GE3
Vishay Siliconix

MOSFET P-CH 40V 6.9A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
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MOSFET (Metal Oxide)
40 V
6.9A (Tc)
4.5V, 10V
2.5V @ 250µA
11.3 nC @ 4.5 V
990 pF @ 20 V
±20V
-
5W (Tc)
58mOhm @ 2.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SUD50P04-08-BE3
Vishay Siliconix

MOSFET P-CH 40V 50A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
Request a Quote
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
1V @ 250µA
130 nC @ 10 V
5400 pF @ 25 V
±20V
-
3W (Ta), 100W (Tc)
15mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHFR9024TR-GE3
Vishay Siliconix

MOSFET P-CH 60V 8.8A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고3,849
MOSFET (Metal Oxide)
60 V
8.8A (Tc)
10V
4V @ 250µA
19 nC @ 10 V
570 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
280mOhm @ 5.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SQ3426EV-T1_BE3
Vishay Siliconix

MOSFET N-CHANNEL 60V 7A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
재고5,013
MOSFET (Metal Oxide)
60 V
7A (Tc)
4.5V, 10V
2.5V @ 250µA
12 nC @ 4.5 V
720 pF @ 30 V
±20V
-
5W (Tc)
42mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SISS5710DN-T1-GE3
Vishay Siliconix

N-CHANNEL 150 V (D-S) MOSFET POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 26.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Ta), 54.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 31.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
패키지: -
Request a Quote
MOSFET (Metal Oxide)
150 V
7.2A (Ta), 26.2A (Tc)
7.5V, 10V
4V @ 250µA
15 nC @ 10 V
770 pF @ 75 V
±20V
-
4.1W (Ta), 54.3W (Tc)
31.5mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
SISS42LDN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 11.3A/39A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2058 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.9mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
패키지: -
재고57,144
MOSFET (Metal Oxide)
100 V
11.3A (Ta), 39A (Tc)
4.5V, 10V
2.5V @ 250µA
48 nC @ 10 V
2058 pF @ 50 V
±20V
-
4.8W (Ta), 57W (Tc)
14.9mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
SUM70030M-GE3
Vishay Siliconix

MOSFET N-CH 100V 150A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
패키지: -
재고879
MOSFET (Metal Oxide)
100 V
150A (Tc)
-
4V @ 250µA
214 nC @ 10 V
10870 pF @ 50 V
±20V
-
375W (Tc)
3.5mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-7, D2PAK (6 Leads + Tab)
SIHB150N60E-GE3
Vishay Siliconix

E SERIES POWER MOSFET D2PAK (TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고3,000
MOSFET (Metal Oxide)
600 V
22A (Tc)
10V
5V @ 250µA
36 nC @ 10 V
1514 pF @ 100 V
±30V
-
179W (Tc)
158mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF840HPBF
Vishay Siliconix

POWER MOSFET TO220AB, 850 M @ 10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1059 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고3,066
MOSFET (Metal Oxide)
500 V
7.3A (Tc)
10V
4V @ 250µA
39 nC @ 10 V
1059 pF @ 25 V
±30V
-
125W (Tc)
850mOhm @ 4.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFL110TRPBF-BE3
Vishay Siliconix

MOSFET N-CH 100V 1.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: -
재고11,772
MOSFET (Metal Oxide)
100 V
1.5A (Tc)
10V
4V @ 250µA
8.3 nC @ 10 V
180 pF @ 25 V
±20V
-
2W (Ta), 3.1W (Tc)
540mOhm @ 900mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
SQJQ148E-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 375A PPAK 8 X 8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 325W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: PowerPAK® 8 x 8
패키지: -
재고12,534
MOSFET (Metal Oxide)
40 V
375A (Tc)
10V
3.5V @ 250µA
86 nC @ 10 V
4930 pF @ 25 V
±20V
-
325W (Tc)
1.6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
SIR870BDP-T1-RE3
Vishay Siliconix

MOSFET N-CH 100V 18.8A/81A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고16,215
MOSFET (Metal Oxide)
100 V
18.8A (Ta), 81A (Tc)
4.5V, 10V
3V @ 250µA
110 nC @ 10 V
4870 pF @ 50 V
±20V
-
5.4W (Ta), 100W (Tc)
6.1mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SI1305DL-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 0.86A SC-70-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8 V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 290mW (Ta)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
패키지: -
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MOSFET (Metal Oxide)
8 V
860mA (Ta)
-
450mV @ 250µA (Min)
4 nC @ 4.5 V
-
-
-
290mW (Ta)
280mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
SISA14BDN-T1-GE3
Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 917 pF @ 15 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.38mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
패키지: -
재고42,060
MOSFET (Metal Oxide)
30 V
21A (Ta), 72A (Tc)
4.5V, 10V
2.2V @ 250µA
22 nC @ 10 V
917 pF @ 15 V
+20V, -16V
-
3.8W (Ta), 45W (Tc)
5.38mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
IRFR9210PBF-BE3
Vishay Siliconix

P-CHANNEL 200V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
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MOSFET (Metal Oxide)
200 V
1.9A (Tc)
10V
4V @ 250µA
8.9 nC @ 10 V
170 pF @ 25 V
±20V
-
2.5W (Ta), 25W (Tc)
3Ohm @ 1.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SQS142ENW-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 40 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 113W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerPAK® 1212-8SLW
  • Package / Case: PowerPAK® 1212-8SLW
패키지: -
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MOSFET (Metal Oxide)
40 V
110A (Tc)
10V
3.3V @ 250µA
35 nC @ 10 V
1952 pF @ 25 V
±20V
-
113W (Tc)
4.5mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerPAK® 1212-8SLW
PowerPAK® 1212-8SLW
SI2307BDS-T1-BE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고10,230
MOSFET (Metal Oxide)
30 V
2.5A (Ta)
4.5V, 10V
3V @ 250µA
15 nC @ 10 V
380 pF @ 15 V
±20V
-
750mW (Ta)
78mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SIHB4N80E-GE3
Vishay Siliconix

MOSFET N-CH 800V 4.3A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
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MOSFET (Metal Oxide)
800 V
4.3A (Tc)
10V
4V @ 250µA
32 nC @ 10 V
622 pF @ 100 V
±30V
-
69W (Tc)
1.27Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQ2389ES-T1_BE3
Vishay Siliconix

MOSFET P-CH 40V 4.1A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Tc)
  • Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고305,100
MOSFET (Metal Oxide)
40 V
4.1A (Tc)
4.5V, 10V
2.5V @ 250µA
12 nC @ 10 V
420 pF @ 20 V
±20V
-
3W (Tc)
94mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SIHB28N60EF-T1-GE3
Vishay Siliconix

N-CHANNEL 600V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고2,361
MOSFET (Metal Oxide)
600 V
28A (Tc)
10V
4V @ 250µA
120 nC @ 10 V
2714 pF @ 100 V
±30V
-
250W (Tc)
123mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIR872ADP-T1-RE3
Vishay Siliconix

MOSFET N-CH 150V 53.7A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1286 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
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MOSFET (Metal Oxide)
150 V
53.7A (Tc)
7.5V, 10V
4.5V @ 250µA
47 nC @ 10 V
1286 pF @ 75 V
±20V
-
104W (Tc)
18mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIHFBF30S-GE3
Vishay Siliconix

MOSFET N-CHANNEL 900V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고2,799
MOSFET (Metal Oxide)
900 V
3.6A (Tc)
10V
4V @ 250µA
78 nC @ 10 V
1200 pF @ 25 V
±20V
-
125W (Tc)
3.7Ohm @ 2.2A, 100V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIRA84BDP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 22A/70A PPAK SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
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MOSFET (Metal Oxide)
30 V
22A (Ta), 70A (Tc)
4.5V, 10V
2.4V @ 250µA
32 nC @ 10 V
1050 pF @ 15 V
+20V, -16V
-
3.7W (Ta), 36W (Tc)
4.6mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SQJ144EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 130A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 148W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
재고12,792
MOSFET (Metal Oxide)
40 V
130A (Tc)
10V
3.5V @ 250µA
36 nC @ 10 V
1960 pF @ 25 V
±20V
-
148W (Tc)
4.6mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8