페이지 70 - Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 4,844
페이지  70/173
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설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SI8410DB-T2-E1
Vishay Siliconix

MOSFET N-CH 20V MICROFOOT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Micro Foot (1x1)
  • Package / Case: 4-UFBGA
패키지: 4-UFBGA
재고28,464
MOSFET (Metal Oxide)
20V
-
1.5V, 4.5V
850mV @ 250µA
16nC @ 8V
620pF @ 10V
±8V
-
780mW (Ta), 1.8W (Tc)
37 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-Micro Foot (1x1)
4-UFBGA
SISA10DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 30A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 15V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
패키지: PowerPAK? 1212-8
재고29,946
MOSFET (Metal Oxide)
30V
30A (Tc)
4.5V, 10V
2.2V @ 250µA
51nC @ 10V
2425pF @ 15V
+20V, -16V
-
3.6W (Ta), 39W (Tc)
3.7 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot SI4384DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 10A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.47W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고508,872
MOSFET (Metal Oxide)
30V
10A (Ta)
4.5V, 10V
3V @ 250µA
18nC @ 4.5V
-
±20V
-
1.47W (Ta)
8.5 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI4102DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 3.8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 4.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 158 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고179,544
MOSFET (Metal Oxide)
100V
3.8A (Tc)
6V, 10V
4V @ 250µA
11nC @ 10V
370pF @ 50V
±20V
-
2.4W (Ta), 4.8W (Tc)
158 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SIS456DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 35A PPAK 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
패키지: PowerPAK? 1212-8
재고5,728
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
2.2V @ 250µA
55nC @ 10V
1800pF @ 15V
±20V
-
3.8W (Ta), 52W (Tc)
5.1 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot SI4436DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고12,756
MOSFET (Metal Oxide)
60V
8A (Tc)
4.5V, 10V
2.5V @ 250µA
32nC @ 10V
1100pF @ 30V
±20V
-
2.5W (Ta), 5W (Tc)
36 mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SIA413DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 12A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
패키지: PowerPAK? SC-70-6
재고270,324
MOSFET (Metal Oxide)
12V
12A (Tc)
1.5V, 4.5V
1V @ 250µA
57nC @ 8V
1800pF @ 10V
±8V
-
3.5W (Ta), 19W (Tc)
29 mOhm @ 6.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Single
PowerPAK? SC-70-6
hot IRFR024TRPBF
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고84,000
MOSFET (Metal Oxide)
60V
14A (Tc)
10V
4V @ 250µA
25nC @ 10V
640pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
100 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SIR484DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 20A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
패키지: PowerPAK? SO-8
재고13,548
MOSFET (Metal Oxide)
20V
20A (Tc)
4.5V, 10V
2.5V @ 250µA
23nC @ 10V
830pF @ 10V
±20V
-
3.9W (Ta), 29.8W (Tc)
8.3 mOhm @ 17.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI7114ADN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 35A PPAK 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
패키지: PowerPAK? 1212-8
재고1,745,832
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
2.5V @ 250µA
32nC @ 10V
1230pF @ 15V
±20V
-
3.7W (Ta), 39W (Tc)
7.5 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot SI3458BDV-T1-E3
Vishay Siliconix

MOSFET N-CH 60V 4.1A 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고695,616
MOSFET (Metal Oxide)
60V
4.1A (Tc)
4.5V, 10V
3V @ 250µA
11nC @ 10V
350pF @ 30V
±20V
-
2W (Ta), 3.3W (Tc)
100 mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
hot SI4487DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 11.6A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고466,836
MOSFET (Metal Oxide)
30V
11.6A (Tc)
4.5V, 10V
2.5V @ 250µA
36nC @ 10V
1075pF @ 15V
±25V
-
2.5W (Ta), 5W (Tc)
20.5 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SI9433BDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 4.5A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,240
MOSFET (Metal Oxide)
20V
4.5A (Ta)
2.7V, 4.5V
1.5V @ 250µA
14nC @ 4.5V
-
±12V
-
1.3W (Ta)
40 mOhm @ 6.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot SIRA14DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 58A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 31.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
패키지: PowerPAK? SO-8
재고510,696
MOSFET (Metal Oxide)
30V
58A (Tc)
4.5V, 10V
2.2V @ 250µA
29nC @ 10V
1450pF @ 15V
+20V, -16V
-
3.6W (Ta), 31.2W (Tc)
5.1 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI1499DH-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 1.6A SC-70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고432,012
MOSFET (Metal Oxide)
8V
1.6A (Tc)
1.2V, 4.5V
800mV @ 250µA
16nC @ 4.5V
650pF @ 4V
±5V
-
2.5W (Ta), 2.78W (Tc)
78 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6 (SOT-363)
6-TSSOP, SC-88, SOT-363
SI5415EDU-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 25A PPAK CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 10A, 4.5V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? ChipFet Single
  • Package / Case: PowerPAK? ChipFET? Single
패키지: PowerPAK? ChipFET? Single
재고23,376
MOSFET (Metal Oxide)
20V
25A (Tc)
1.8V, 4.5V
1V @ 250µA
120nC @ 8V
4300pF @ 10V
±8V
-
3.1W (Ta), 31W (Tc)
9.8 mOhm @ 10A, 4.5V
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFet Single
PowerPAK? ChipFET? Single
SI5411EDU-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 25A PPAK CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 6A, 4.5V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? ChipFet Single
  • Package / Case: PowerPAK? ChipFET? Single
패키지: PowerPAK? ChipFET? Single
재고26,394
MOSFET (Metal Oxide)
12V
25A (Tc)
1.8V, 4.5V
900mV @ 250µA
105nC @ 8V
4100pF @ 6V
±8V
-
3.1W (Ta), 31W (Tc)
8.2 mOhm @ 6A, 4.5V
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFet Single
PowerPAK? ChipFET? Single
SI5459DU-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 8A CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 6.7A, 4.5V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? ChipFet Single
  • Package / Case: PowerPAK? ChipFET? Single
패키지: PowerPAK? ChipFET? Single
재고29,580
MOSFET (Metal Oxide)
20V
8A (Tc)
2.5V, 4.5V
1.4V @ 250µA
26nC @ 10V
665pF @ 10V
±12V
-
3.5W (Ta), 10.9W (Tc)
52 mOhm @ 6.7A, 4.5V
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFet Single
PowerPAK? ChipFET? Single
hot SI1471DH-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 2.7A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고1,340,760
MOSFET (Metal Oxide)
30V
2.7A (Tc)
2.5V, 10V
1.6V @ 250µA
9.8nC @ 4.5V
445pF @ 15V
±12V
-
1.5W (Ta), 2.78W (Tc)
100 mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6 (SOT-363)
6-TSSOP, SC-88, SOT-363
hot SIA431DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 12A PPAK SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
패키지: PowerPAK? SC-70-6
재고1,123,260
MOSFET (Metal Oxide)
20V
12A (Tc)
1.5V, 4.5V
850mV @ 250µA
60nC @ 8V
1700pF @ 10V
±8V
-
3.5W (Ta), 19W (Tc)
25 mOhm @ 6.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Single
PowerPAK? SC-70-6
hot SI3443CDV-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 5.97A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고732,564
MOSFET (Metal Oxide)
20V
5.97A (Tc)
2.5V, 4.5V
1.5V @ 250µA
12.4nC @ 5V
610pF @ 10V
±12V
-
2W (Ta), 3.2W (Tc)
60 mOhm @ 4.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SIB410DK-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 9A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 3.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-75-6L Single
  • Package / Case: PowerPAK? SC-75-6L
패키지: PowerPAK? SC-75-6L
재고22,152
MOSFET (Metal Oxide)
30V
9A (Tc)
1.8V, 4.5V
1V @ 250µA
15nC @ 8V
560pF @ 15V
±8V
-
2.5W (Ta), 13W (Tc)
42 mOhm @ 3.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Single
PowerPAK? SC-75-6L
hot SI1070X-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 1.2A SOT563F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 236mW (Ta)
  • Rds On (Max) @ Id, Vgs: 99 mOhm @ 1.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
패키지: SOT-563, SOT-666
재고2,081,640
MOSFET (Metal Oxide)
30V
-
2.5V, 4.5V
1.55V @ 250µA
8.3nC @ 5V
385pF @ 15V
±12V
-
236mW (Ta)
99 mOhm @ 1.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-6
SOT-563, SOT-666
SI8805EDB-T2-E1
Vishay Siliconix

MOSFET P-CH 8V MICROFOOT

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Microfoot
  • Package / Case: 4-XFBGA
패키지: 4-XFBGA
재고58,404
MOSFET (Metal Oxide)
8V
-
1.2V, 4.5V
700mV @ 250µA
10nC @ 4.5V
-
±5V
-
500mW (Ta)
68 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-Microfoot
4-XFBGA
hot SI1400DL-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 1.6A SC70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고278,040
MOSFET (Metal Oxide)
20V
1.6A (Ta)
2.5V, 4.5V
600mV @ 250µA (Min)
4nC @ 4.5V
-
±12V
-
568mW (Ta)
150 mOhm @ 1.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6 (SOT-363)
6-TSSOP, SC-88, SOT-363
SIB417AEDK-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 9A PWRPACK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 878pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-75-6L Single
  • Package / Case: PowerPAK? SC-75-6L
패키지: PowerPAK? SC-75-6L
재고29,118
MOSFET (Metal Oxide)
8V
9A (Tc)
1.2V, 4.5V
1V @ 250µA
18.5nC @ 5V
878pF @ 4V
±5V
-
2.4W (Ta), 13W (Tc)
32 mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-75-6L Single
PowerPAK? SC-75-6L
SI8812DB-T2-E1
Vishay Siliconix

MOSFET N-CH 20V MICROFOOT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Microfoot
  • Package / Case: 4-UFBGA
패키지: 4-UFBGA
재고24,348
MOSFET (Metal Oxide)
20V
-
1.2V, 4.5V
1V @ 250µA
17nC @ 8V
-
±5V
-
500mW (Ta)
59 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-Microfoot
4-UFBGA
SIA418DJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 12A SC70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
패키지: PowerPAK? SC-70-6
재고51,222
MOSFET (Metal Oxide)
30V
12A (Tc)
4.5V, 10V
2.4V @ 250µA
17nC @ 10V
570pF @ 15V
±20V
-
3.5W (Ta), 19W (Tc)
18 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Single
PowerPAK? SC-70-6