페이지 11 - Vishay Siliconix 제품 | Heisener Electronics
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Vishay Siliconix 제품

기록 5,544
페이지  11/198
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SI1472DH-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 5.6A SC70-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 57 mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고2,256
IRFZ34L
Vishay Siliconix

MOSFET N-CH 60V 30A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고2,896
SI7104DN-T1-E3
Vishay Siliconix

MOSFET N-CH 12V 35A PPAK 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
패키지: PowerPAK? 1212-8
재고4,480
SIHP065N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 40A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,224
hot SIA427ADJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 8V 12A 6SC-70

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
패키지: PowerPAK? SC-70-6
재고7,936
SQM50P03-07_GE3
Vishay Siliconix

MOSFET P-CH 30V 50A TO263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고18,180
SIHP24N65E-E3
Vishay Siliconix

MOSFET N-CH 650V 24A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고23,016
hot SI4850EY-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 6A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고14,820
hot IRFL214TRPBF
Vishay Siliconix

MOSFET N-CH 250V 790MA SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 470mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고1,481,892
hot SI1031R-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 0.14A SC-75A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
패키지: SC-75A
재고545,088
hot SIA913ADJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
패키지: PowerPAK? SC-70-6 Dual
재고3,192,612
SI9113DY-E3
Vishay Siliconix

IC CONTROLLER PWM/LDO 14SOIC

  • Applications: Controller, ISDN Power Supplies
  • Voltage - Input: 23.5 V ~ 200 V
  • Number of Outputs: 1
  • Voltage - Output: Adj to 1.3V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
패키지: 14-SOIC (0.154", 3.90mm Width)
재고4,240
SIP21106DT-46-E3
Vishay Siliconix

IC REG LIN 4.6V 150MA TSOT23-5

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 4.6V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.22V @ 150mA
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 85µA
  • PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
  • Control Features: Enable
  • Protection Features: Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSOT-23-5
패키지: SOT-23-5 Thin, TSOT-23-5
재고3,168
hot SIC413CB-T1-E3
Vishay Siliconix

IC REG BUCK ADJ 4A SYNC 8SOIC

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 4.75V
  • Voltage - Input (Max): 26V
  • Voltage - Output (Min/Fixed): 0.6V
  • Voltage - Output (Max): 13.2V
  • Current - Output: 4A
  • Frequency - Switching: 500kHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고240,720
hot DG9431DV-T1
Vishay Siliconix

IC ANALOG SWITCH SPDT LV 6TSOP

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 30 Ohm
  • Channel-to-Channel Matching (ΔRon): 400 mOhm
  • Voltage - Supply, Single (V+): 2.7 V ~ 5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 75ns, 50ns
  • -3db Bandwidth: -
  • Charge Injection: 2pC
  • Channel Capacitance (CS(off), CD(off)): 7pF
  • Current - Leakage (IS(off)) (Max): 100pA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
패키지: SOT-23-6 Thin, TSOT-23-6
재고47,520
DG304BDJ
Vishay Siliconix

IC SWITCH CMOS 14DIP

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 50 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): ±15V
  • Switch Time (Ton, Toff) (Max): 110ns, 70ns (Typ)
  • -3db Bandwidth: -
  • Charge Injection: 30pC
  • Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
  • Current - Leakage (IS(off)) (Max): 5nA
  • Crosstalk: -74dB @ 500kHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-PDIP
패키지: 14-DIP (0.300", 7.62mm)
재고4,288
hot DG9233DQ-T1-E3
Vishay Siliconix

IC SWITCH DUAL SPST 8MSOP

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 30 Ohm
  • Channel-to-Channel Matching (ΔRon): 400 mOhm
  • Voltage - Supply, Single (V+): 2.7 V ~ 12 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 75ns, 50ns
  • -3db Bandwidth: -
  • Charge Injection: 2pC
  • Channel Capacitance (CS(off), CD(off)): 7pF, 13pF
  • Current - Leakage (IS(off)) (Max): 100pA
  • Crosstalk: -90dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고59,988
DG2034DN-T1-E4
Vishay Siliconix

IC MULTIPLEXER 4X1 12QFN

  • Switch Circuit: SP4T
  • Multiplexer/Demultiplexer Circuit: 4:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 5.5 Ohm
  • Channel-to-Channel Matching (ΔRon): 160 mOhm
  • Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 30ns, 20ns
  • -3db Bandwidth: -
  • Charge Injection: -4.4pC
  • Channel Capacitance (CS(off), CD(off)): 13pF, 43pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -77dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 12-VFQFN Exposed Pad
  • Supplier Device Package: 12-QFN (3x3)
패키지: 12-VFQFN Exposed Pad
재고7,808
hot DG2001DV-T1-E3
Vishay Siliconix

IC ANLG SWITCH SPDT LV 6TSOP

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 7 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 20ns, 10ns
  • -3db Bandwidth: -
  • Charge Injection: 7pC
  • Channel Capacitance (CS(off), CD(off)): 17pF
  • Current - Leakage (IS(off)) (Max): 900pA
  • Crosstalk: -70dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
패키지: SOT-23-6 Thin, TSOT-23-6
재고4,576
DG2737DN-T1-E4
Vishay Siliconix

IC SWITCH 2XSPST 8 OHM 8MINIQFN

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 8 Ohm
  • Channel-to-Channel Matching (ΔRon): 100 mOhm
  • Voltage - Supply, Single (V+): 2.3 V ~ 4.3 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 60ns, 50ns
  • -3db Bandwidth: 720MHz
  • Charge Injection: 10.4pC
  • Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
  • Current - Leakage (IS(off)) (Max): 10nA
  • Crosstalk: -109dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-UFQFN
  • Supplier Device Package: 8-miniQFN (1.4x1.4)
패키지: 8-UFQFN
재고3,248
DG411LEDQ-T1-GE3
Vishay Siliconix

IC SWITCH QUAD SPST 16-TSSOP

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 26 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 3 V ~ 16 V
  • Voltage - Supply, Dual (V±): ±3 V ~ 8 V
  • Switch Time (Ton, Toff) (Max): 50ns, 30ns
  • -3db Bandwidth: -
  • Charge Injection: 6.6pC
  • Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -114dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
패키지: 16-TSSOP (0.173", 4.40mm Width)
재고6,032
SISH617DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 13.9A/35A PPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8SH
  • Package / Case: PowerPAK® 1212-8SH
패키지: -
재고51,588
SQJ500AEP-T1_BE3
Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8
패키지: -
재고17,814
SIA456DJ-T3-GE3
Vishay Siliconix

MOSFET N-CH 200V 1.1A/2.6A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6
  • Package / Case: PowerPAK® SC-70-6
패키지: -
Request a Quote
SQS462EN-T1_BE3
Vishay Siliconix

N-CHANNEL 60-V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
패키지: -
재고45,180
SIHD14N60ET1-GE3
Vishay Siliconix

N-CHANNEL 600V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고4,932
SIHP35N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 32A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고2,850
SQJ868EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 58A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
패키지: -
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