페이지 182 - Vishay Siliconix 제품 | Heisener Electronics
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Vishay Siliconix 제품

기록 5,544
페이지  182/198
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2N4392-E3
Vishay Siliconix

MOSFET N-CH 40V .1NA TO-18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • Resistance - RDS(On): 60 Ohm
  • Power - Max: 1.8W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
패키지: TO-206AA, TO-18-3 Metal Can
재고4,976
hot SI7856ADP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 15A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
패키지: PowerPAK? SO-8
재고889,572
hot SI2308DS-T1-E3
Vishay Siliconix

MOSFET N-CH 60V 2A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고1,440,468
IRFR224TRR
Vishay Siliconix

MOSFET N-CH 250V 3.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,296
hot IRF830STRL
Vishay Siliconix

MOSFET N-CH 500V 4.5A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고16,596
hot IRLZ34
Vishay Siliconix

MOSFET N-CH 60V 30A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고390,000
IRFBF30STRLPBF
Vishay Siliconix

MOSFET N-CH 900V 3.6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,888
hot SI4686DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 18.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 5.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고1,205,220
hot SI7450DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 200V 3.2A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
패키지: PowerPAK? SO-8
재고83,580
SQS401EN-T1_GE3
Vishay Siliconix

MOSFET P-CH 40V 16A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
패키지: PowerPAK? 1212-8
재고6,480
IRFI9540GPBF
Vishay Siliconix

MOSFET P-CH 100V 11A TO220FP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
패키지: TO-220-3 Full Pack, Isolated Tab
재고43,410
hot SI4436DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고12,756
hot SIS414DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 20A 1212-8 PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
패키지: PowerPAK? 1212-8
재고25,776
hot SIA433EDJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 12A SC-70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
패키지: PowerPAK? SC-70-6
재고1,607,892
hot SI7460DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 11A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
패키지: PowerPAK? SO-8
재고4,832
hot SI1023X-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 0.37A SOT563F

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 370mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
패키지: SOT-563, SOT-666
재고1,215,624
SQ1912EH-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 20V SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
패키지: 6-TSSOP, SC-88, SOT-363
재고6,480
hot SI6968BEDQ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 5.2A 8TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고246,168
hot SI4946BEY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 6.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
  • Power - Max: 3.7W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고582,864
8767301XA
Vishay Siliconix

MOSFET

  • Switch Circuit: -
  • Multiplexer/Demultiplexer Circuit: -
  • Number of Circuits: -
  • On-State Resistance (Max): -
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): -
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): -
  • Current - Leakage (IS(off)) (Max): -
  • Crosstalk: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,688
9204202XC
Vishay Siliconix

MOSFET

  • Switch Circuit: SP4T
  • Multiplexer/Demultiplexer Circuit: 4:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 100 Ohm
  • Channel-to-Channel Matching (ΔRon): 15 Ohm (Max)
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): ±15V
  • Switch Time (Ton, Toff) (Max): 150ns, 150ns
  • -3db Bandwidth: -
  • Charge Injection: 20pC
  • Channel Capacitance (CS(off), CD(off)): 3pF, 14pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Package / Case: FlatPack
  • Supplier Device Package: 16-Flatpack
패키지: FlatPack
재고5,232
DG300ABA
Vishay Siliconix

IC SWITCH DUAL SPST TO100-10

  • Switch Circuit: SPST - NO
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 50 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): ±15V
  • Switch Time (Ton, Toff) (Max): 300ns, 250ns
  • -3db Bandwidth: -
  • Charge Injection: 8pC
  • Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
  • Current - Leakage (IS(off)) (Max): 1nA
  • Crosstalk: -74dB @ 500kHz
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Package / Case: TO-100-10 Metal Can
  • Supplier Device Package: TO-100-10
패키지: TO-100-10 Metal Can
재고6,992
hot DG403DJ
Vishay Siliconix

IC ANALOG SWITCH SPDT 16DIP

  • Switch Circuit: SPST - NO/NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 45 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): ±15V
  • Switch Time (Ton, Toff) (Max): 150ns, 100ns
  • -3db Bandwidth: -
  • Charge Injection: 10pC
  • Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -90dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
패키지: 16-DIP (0.300", 7.62mm)
재고16,620
SQD40061EL_GE3
Vishay Siliconix

MOSFET P-CH 40V 100A TO252AA

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고9,414
SIHW21N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 17.4A TO247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
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SUM70042E-GE3
Vishay Siliconix

N-CHANNEL 100-V (D-S) MOSFET D2P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6490 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고6,801
SQ4410EY-T1_BE3
Vishay Siliconix

MOSFET N-CH 30V 15A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
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재고14,304
SQ2310CES-T1_GE3
Vishay Siliconix

MOSFET N-CH 20V 6A TO236

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
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