Infineon Technologies introduces a new automotive power module, HybridPACK™ Drive G2. The module inherits the mature HybridPACK Drive G1 integrated B6 package concept, offering scalability at the same size and scaling to higher power and ease of use. The HybridPACK Drive G2 family comes in different current and voltage ratings (750 V and 1200 V) and uses Infineon's next generation chip technologies, EDT3 (Silicon IGBT) and CoolSiC™ G2 MOSFET. 
Capable of up to 300 kW in 750 V and 1200 V voltage grades, HybridPACK Drive G2 offers a high degree of ease of use and new features such as integrated options for next-generation phase current sensors and on-chip temperature sensing to optimize system costs. This power module achieves both performance and power density improvements through improved assembly and interconnection technologies. By adopting new interconnect technology (chip sintering) and new materials (new black plastic housing), the module also achieves higher temperature ratings, resulting in higher performance and longer service life.
The first generation (G1) HybridPACK Drive was launched in 2017. It uses silicon EDT2 technology to provide a power range of 100 kW to 180 kW in the 750 V voltage class. In 2021, Infineon further expands its product range with the launch of the first generation of the car-gauge HybridPACK Drive CoolSiC MOSFET. This not only allows the inverter design to achieve higher power (up to 250 kW) in the 1200 V class, but also expands drive range, reduces battery size, and optimizes system size and cost. With nearly 3 million units shipped worldwide on various electric vehicle platforms, HybridPACK Drive is the market-leading power module from semiconductor technology company Infineon.
