The automotive grade all silicon carbide half bridge MOSFET module Pcore2 is a product specially developed by basic semiconductor for new energy commercial vehicles and other large vehicle customers' demands for high power density and long device life of the main traction driver power devices.
The product adopts standard ED3 packaging, double-sided pressured silver sintering connection process, high-density copper wire bonding technology, high-performance silicon nitride AMB ceramic plate, which can adapt to standard CAV application packaging, and can effectively reduce the temperature rise and loss of power devices in the application of new energy commercial vehicle driver electronic control and fuel cell energy management system.
The Pcore 2 series products have the characteristics of low switching loss, high-speed switching, low temperature dependence, high reliability, etc. The working junction temperature can reach 175 ℃. They have the same package size as traditional silicon based modules, and can replace IGBT modules with the same package to a certain extent, thus helping customers effectively shorten the product development cycle and improve work efficiency.
