EPC introduces 100 V, 3.8 mΩ GaN FETs | Heisener Electronics
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EPC introduces 100 V, 3.8 mΩ GaN FETs

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포스트 날짜: 2022-09-27, EPC

      EPC Power Conversion, a global leader in enhancement-mode gallium nitride (eGaN) power FETs and ICs, introduces the new 100 V, thermally enhanced QFN packaged EPC2306, a 48 V DC/ DC conversion, 48 V BLDC motor drivers for electric vehicles and robots, solar optimizers and micro-inverters, and class-D audio amplifiers.

      The EPC2306 GaN FET has ultra-low on-resistance (only 3.8 mOhm) and very small QG, QGD and QOSS parameters for low conduction and switching losses. It is packaged in a thermally enhanced QFN package with heat dissipation from the top and a footprint of only 3 mm x 5 mm, providing an ultra-miniaturized solution for the highest power density applications.

     The EPC2306 is package compatible with the previously introduced 100 V, 1.8 mOhm EPC2302, allowing design engineers to trade off on-resistance versus price, and the package size of both devices is compatible with the same PCB layout, enabling efficiency or cost-optimized solution.

     "The EPC2306 combines the benefits of a 100 V GaN FET with an easy-to-assemble QFN package without performance degradation," said Alex Lidow, CEO and co-founder of EPC Power Conversion. "Designers can take advantage of our packaged GaN FETs. series enabling lighter, battery-powered BLDC motor drivers for electric vehicles and drones; more efficient 48 V input DC/DC converters for data centers, data communications, artificial intelligence, and other industrial applications and consumer applications.”

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