GeneSiC Semiconductor - High-temperature SiC transistors and rectifiers for smaller and lighter systems (GA05JT03-46) | Heisener Electronics
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GeneSiC Semiconductor - High-temperature SiC transistors and rectifiers for smaller and lighter systems (GA05JT03-46)

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포스트 날짜: 2015-08-12, GeneSiC Semiconductor
GeneSiC Semiconductor's high-temperature SiC transistors and rectifiers, compact high-temperature SiC junction transistors (SJT) and rectifiers are packaged in TO-46. Discrete components are designed to operate at temperatures above 225 ° C. High voltage, low RDS (ON) SiC transistors and rectifiers are designed to reduce the size and weight of electronic applications that need to handle higher power at high temperatures.

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