Mouser now stocks UF4C and UF4SC 1200V SiC fets from UnitedSiC (now Qorvo). Part of the high-performance SiC fet family, this fourth-generation device family offers industry-leading on-resistance FOM, making it ideal for power solutions for mainstream 800V bus architectures, including on-board chargers for electric vehicles, industrial battery charging inverters, industrial power supplies, DC-DC solar inverters, etc.
UF4C/SC SiC FETs offer designers a variety of on-resistance and packaging options. The package includes a Kelvin gate that provides ultra-low gate charge and excellent reverse recovery characteristics, allowing designers to switch inductive loads and any application requiring standard gate drive. The 1200V SiC FETs are available with on-resistance (RDS(on)) values from 23mOhm to 70mOhm and in a three-lead TO-247-3L package or a four-lead TO-247-4L package.
Other important features of SiC FETs include excellent threshold noise margin, true 5V threshold voltage, excellent reverse recovery and built-in ESD gate protection clamp. And all UF4C/SC series devices can be safely driven using standard 0V to 12V or 15V gate drive voltages, making them ideal replacements for silicon IGBTs, FETs or superjunction devices without changing the gate drive voltage.
