IDT6116SA/LA is a 16384-bit high-speed static RAM with a construction of 2K x 8. It is manufactured using IDT's high performance, high reliability CMOS technology. Access time can be as fast as 15ns. The circuit also provides a low-power standby mode. When the CS is high, the circuit will automatically enter and remain in standby power mode as long as the CS remains high.
Pin Configurations
This capability provides significant system-level power and cooling savings. Low-power (LA) versions also offer battery backup data retention capabilities, where the circuit typically consumes only 1µW to 4µW, uses a 2V battery, and all inputs and outputs of the IDT6116SA/LA are ttl compatible. Full static asynchronous circuit, no clock or refresh is required during operation.
The IDT6116SA/LA offers high plate-level package density with a 24-pin 600 and 300-mil-plastic or ceramic DIP, 24-pin Gull-wing SOIC and 24-pin J-bend SOJ package. The military grade product conforms to MIL-STD-883's latest version, Class B, making it ideal for military temperature applications requiring the highest performance and reliability.
Functional Block Diagram
