With the introduction of 650V, 10A SiC schottky diodes, Nexperia has entered the high power SiC diode market. The high-efficiency GaN FET provider's strategic move expands its high-voltage wiband-gap semiconductor device offerings.
The company's first SiC schottky diode is an industrial-grade device with 650V repetitive peak reverse voltage (VRRM) and 10A continuous forward current (IF) designed to consolidate ultra-high performance and high efficiency with low energy losses in power conversion applications. Due TO the added benefit of a true two-pin (R2P) package with high voltage compatibility, with a higher creepage distance, it offers a choice of surface-mount (DPAK R2P and D2PAK R2P) or through-hole (TO-220-2, to-247-2) devices. Engineering samples are available upon request. The company plans to continuously expand its SiC diode portfolio, bringing its total number of products operating in 650V and 1200V voltage levels and 6-20A current ranges to 72.
According to Mark Roeloffzen, General Manager of Nexperia's Bipolar Discrete Group, "Wide-band gap semiconductors like gallium nitride and silicon carbide now well meet stringent requirements for large-scale applications, bringing oems the promise of higher efficiency, greater power density, lower system costs and operating costs. "Nexperia's diverse SiC diode portfolio will bring greater choice and availability to this market." In a frequent energy-conscious world, there is a booming demand for high-power applications with superior efficiency and power density. In this regard, silicon is fast approaching its physical limits.
