IXYS - Highest-voltage power MOSFETs suit parallel device operation (IXTA1N200P3HV) | Heisener Electronics
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IXYS - Highest-voltage power MOSFETs suit parallel device operation (IXTA1N200P3HV)

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포스트 날짜: 2015-09-22, IXYS
The company stated that the IXYS 2000V high-voltage power MOSFET is the highest voltage product of its kind in an international standard-size package. These devices have a rated current range of 0.6A to 3A and are designed to address high blocking voltages and high voltage packages. They are easy to install, save space and have a high power density. These are ideal for high-voltage MOSFETs, suitable for parallel device operation, and provide a cost-effective solution compared to low-voltage MOSFETs connected in series. They can provide the best solution for applications such as capacitor discharge circuits, high-voltage automatic test equipment, laser and X-ray generation systems, high-voltage power supplies and pulse circuits.