Industrial UnitedSiC 750V UJ4C/SC SiC FET in D2PAK-7L Package | Heisener Electronics
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Industrial UnitedSiC 750V UJ4C/SC SiC FET in D2PAK-7L Package

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포스트 날짜: 2022-09-25, United Chemi-Con

     The UJ4C/SC series devices are 750 V Silicon Carbide Field Effect Transistors (SiC FETs) offering low switching losses, improved efficiency at higher speeds, and increased system power density with the D2PAK-7L package option. These FETs are optimized for applications such as on-board chargers, soft-switching DC/DC converters, battery charging, and IT/server power supplies.

    UJ4C/SC devices utilize a unique cascode SiC FET technology, where a normally-on SiC JFET is packaged with a Si MOSFET to form a normally-off SiC FET. These FETs reduce the inductance of the compact internal connection loop, which, together with the included Kelvin source connection, reduces switching losses, enabling higher operating frequencies and system power density.

     The D2PAK-7L version of the UJ4C/SC series offers on-resistance options from 9 mΩ to 60 mΩ, enabling design flexibility while maintaining sufficient design redundancy and circuit robustness. These FETs feature a 750 V voltage rating, excellent on-resistance × area (RDS(on) × A) figure of merit, low body diode, ultra-low gate charge, and a 4.8 V to 15 V gate drive capable of V threshold voltage for both versatility and low conduction losses.

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