Bourns, the world's leading manufacturer of electronic components, is proud to announce its entry into the IGBT discrete market with the first high-efficiency 600V/650V discrete product line co-packaged with a Fast Recovery Diode (FRD). The five new Bourns® BID series discrete IGBTs are designed with advanced trench gate field stop technology, which not only provides better control of dynamic characteristics, the Bourns BID series discrete IGBTs provide lower collector-emitter saturation voltage (VCE(sat)) and lower switching losses. Additionally, the structure provides a positive temperature coefficient that helps increase device life and reduce design requirements for high voltage and high current product applications.
Since Bourns' new IGBTs are packaged in TO-252, TO-247 and TO-247N packages with high thermal resistance, these devices offer lower thermal resistance Rth(j-c), making them ideal for switch mode power supplies (SMPS), uninterruptible power supplies ( Ideal solution for UPS), induction heating and power factor correction (PFC) applications. Bourns® BID series discrete IGBTs are available in four voltage/current models, 600V/5A, 600V/20A, 600V/30A and 650V/50A, and are tested and certified according to JEDEC power switch product standards.
