ON Semiconductor's Field Stop II series of insulated gate bipolar transistors (IGBTs) provide superior performance in demanding switching applications.
The device's high performance is achieved through the powerful and cost-effective Field Stop II trench structure, which has both a low on-voltage and minimal switching losses. Ultra-thin wafers and backside processing are enabling technologies that reduce conduction and switching power conversion losses. Voltage options range from 600V to 1350V, while current ranges from 15A to 75A at 100C.
These features make Field Stop II IGBTs ideal for uninterruptible power supply (UPS) and solar applications.
