The 1700 V EliteSiC MOSFET (NTH4L028N170M1) of onsemi provides a SiC solution with higher breakdown voltage (BV) required for high power industrial applications. Two 1700 V avalanche EliteSiC Schottky diodes (NDSH25170A, NDSH10170A) enable designers to achieve stable operation under high temperature and high pressure, while SiC enables high energy efficiency design.
Simon Keeton, Executive Vice President of onsemi and General Manager of Power Solutions, said: "The new 1700 V EliteSiC device provides excellent energy efficiency and lower power loss, which strengthens the high standards of our EliteSiC series products in terms of performance and quality, and further expands the depth and breadth of Ansome EliteSiC. With our end-to-end SiC manufacturing capabilities, the technology and supply guarantee provided by Ansome can meet the needs of industrial energy infrastructure and industrial drive providers."
The application of renewable energy is constantly developing towards higher voltage, in which the solar energy system is developing from 1100 V to 1500 V DC bus. To support this change, customers need MOSFETs with higher breakdown voltage (BV) values. The new 1700 V EliteSiC MOSFET has a maximum Vgs range of - 15 V/25 V, which is suitable for fast switching applications where the gate voltage is increased to - 10 V, providing higher system reliability.
Under the test conditions of 1200 V and 40 A, the gate charge (Qg) of 1700 V EliteSiC MOSFET has reached 200 nC, which is the leading market, while the Qg of similar competitive devices is nearly 300 nC. Low Qg is critical to achieving high energy efficiency in fast switching, high-power renewable energy applications.
